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姓名	羅曉涵(HSIAO-HAN LO)  查詢紙本館藏	畢業系所	機械工程學系
論文名稱	非對稱雙極脈衝DC濺鍍氮化鋁薄膜之電源參數實驗設計與OES大數據輔助預測殘留應力最佳化 (Residual stress classification of pulsed DC reactive sputtered aluminum nitride via large-scale data analysis of optical emission spectroscopy)
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檔案	[Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 (2026-6-30以後開放)
摘要(中)	本論文研究了殘餘量對脈衝直流反應濺射製備氮化鋁（AlN）薄膜生長過程的影響。由於顯著的膜殘餘應力，可能會造成氮化鋁薄膜從基材破裂或剝離。因此，殘餘應力的控制對於機械穩定的氮化鋁薄膜的合成非常重要。另外，還分析了晶體的發展和殘餘應力與晶體的晶體學取向之間的關係。使用X射線衍射（X-ray diffraction, XRD），傅立葉變換紅外光譜（Fourier transform infrared spectroscopy, FTIR），透射電子顯微鏡（Transmission electron microscope, TEM）和掃描電子顯微鏡（Scanning electron microscope, SEM）來測量氮化鋁薄膜的晶體結構，厚度和殘餘應力。結果表明，氮化鋁在不同的沉積條件下具有不同的結構和應力特性。此外，在本研究中使用主成分分析（Principal Component Analysis, PCA）對原位發射光譜（Optical Emission Spectroscopy, OES）進行了分析。評估的過程參數包括脈衝直流頻率，直流功率和氣體流量比。 PC1-DEV（在第一主分量方向上的標準偏差）用於計算殘餘應力值（VRS），以準確地預測和分類沉積膜的應力狀態，即壓縮應力或拉伸應力。應用Box-Behnken實驗設計，基於響應面法（RSM）建立了數學模型，並確定了產生最小殘餘應力的最佳條件。
摘要(英)	The influence of residual amount on the growth process of aluminum nitride (AlN) thin films prepared by pulsed DC reactive sputtering was studied. The AlN film may crack or peel from the substrate due to significant film residual stress. Therefore, the control of residual stress is very important for the synthesis of mechanically stable AlN films. Additionally, the relationship between the development and residual stress and the crystallographic orientation of crystals is also analyzed. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM), and Scanning Electron Microscope (SEM) were used to measure the crystal structure, thickness, and residual stress in AlN films. The results show that AlN has a different structure and stress characteristics under different deposition conditions. Besides, in-situ Optical emission spectroscopy (OES) was analyzed using principal component analysis (PCA) in this study. The process parameters evaluated included pulsed DC frequency, DC power and flow gas ratio. The PC1-DEV (standard deviation in the first principal component direction) is used to calculate the value residual stress (VRS) to accurately predict and classify the stress state of the deposited film, i.e., compression stress or tensile stress. The Box-Behnken experimental design was applied, a mathematical model was established based on the response surface method (RSM), and the optimum conditions for generating the minimum residual stress were determined.
關鍵字(中)	★ 非對稱雙極脈衝 ★ 氮化鋁薄膜 ★ 殘留應力 ★ 大數據 ★ 原位發射光譜	關鍵字(英)	★ pulsed DC reactive sputtered ★ aluminum nitride ★ residual stress ★ via large-scale data ★ optical emission spectroscopy
論文目次	中文摘要 i Abstract ii 誌謝 iii 目錄 iv 圖目錄 vii 表目錄 x 第一章 緒論 1 1-1 前言 1 1-2 研究動機與目的 2 1-3 論文架構 4 第二章 材料與背景介紹 5 2-1 物理氣相沉積(PVD) 5 2-2 薄膜沉積原理 7 2-3 薄膜殘留應力種類與成因 9 2-4 脈衝頻率簡介 11 2-5 電漿簡介 14 2-6 光放射光譜(OES) 20 2-7 機器學習主成分分析(PCA) 22 2-8 實驗設計(DOE) 與反應曲面法(RSM) 25 第三章 研究方法 30 3-1 實驗流程 30 3-2 實驗方法 31 3-2-1參數設定 31 3-2-2試片清洗步驟 33 3-3-3試片製作 35 3-2-4實驗步驟 35 3-3 實驗裝置與量測 37 3-3-1雙極脈衝直流反應式濺鍍(Pulsed DC reactive sputtering) 37 3-3-2光放射光譜 (Optical Emission Spectroscopy，OES) 40 3-3-3穿透式電子顯微鏡 (Transmission Electron Microscopy，TEM) 43 3-3-4掃描式電子顯微鏡 (Scanning Electron Microscope，SEM) 45 3-3-5傅立葉轉換紅外光譜(Fourier transform infrared spectroscopy，FTIR) 47 3-3-6 X-射線繞射分析(X-ray diffraction, XRD) 49 3-3-7 X光繞射法量測薄膜殘留應力 51 第四章 實驗結果與討論 55 4-1 不同濺鍍參數對薄膜結構之影響 55 4-2 氮化鋁薄膜品質分析 59 4-2-1傅立葉轉換紅外光譜(FTIR)對氮化鋁薄膜分析 59 4-2-2 X-射線繞射分析(XRD)對氮化鋁薄膜分析 60 4-2-3應用XRD對薄膜殘留應力的影響 62 4-3 統計分析及優化殘餘應力 64 4-4 大量光放射光譜資料結合機器學習預測殘留應力與驗證 69 第五章 結論 73 參考文獻 74
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指導教授	傅尹坤(KUN-FU YIN)	審核日期	2021-7-7
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