| 摘要(英) |
Silicon (Si) is known as an important material for the semiconductor industry. They are generally widely used as silicon (Si) wafers. However, one of the primary challenges is the poor uniformity of the Si-wafer edge. In this study, an injector called x-flow was added to the reactor to make the Si thickness uniformity on the Si wafer better. The computational results show that the variation of the growth rate of Si on the wafer is strongly dependent on the distance between the streamlines of x-flow and the wafer and how far the streamlines of x-flow can go. Besides, the x-flow affects the growth rate of Si on the wafer by changing the local concentration gradient of Trichlorosilane (TCS) on the wafer. Therefore, this research conducts a detail study on x-flow of different heights, different angles, and different compositions. At a maximum height of x-flow, the streamlines of main flow go below the x-flow, which increases the local concentration gradient of TCS on the wafer and makes the growth rate on the wafer higher. The bigger angle has a long distance between the affected region by x-flow and the edge of the wafer, so the bigger angle makes the change in growth rate on the edge of the wafer less. The x-flow has more TCS, which makes the local concentration gradient of TCS larger and makes the growth rate near the edge of the wafer larger. |
| 參考文獻 |
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