| 摘要(英) |
Continuous Czochralski crystal growth (CCZ) is a single crystal silicon growth method modified from Czochralski crystal growth (CZ). Due to the additional structure of the partition, when the feed is continuously added, no unmelted feed will be mixed into the growing crystal. The heat and mass transfer during the growth process will be affected by the presence of partition. This study will analyze the influence of different crucible shapes, heaters, partition depth, crystal and crucible rotation rate on the conditions of the crystal growth method through numerical simulation.
The results show that the shallow crucible can better transfer heat to maintain the shape of the interface, so the total power is lower. And because the contact area with the melt is small, the generation of oxygen impurities can be reduced. In addition, the small gap under the partition can prevent part of the oxygen from entering the melt under the crystal, so the oxygen concentration at the interface decreases. Different heater designs will also affect the power. Moving the side heater down by 60mm can appropriately reduce power waste, and the power ratio (PR) of the side heater to the bottom heater is 0.24, which can reduce the total power. In order to further reduce the oxygen concentration, the depth of the partition is particularly important. The partition affects the source of oxygen impurities and the mass transfer of the melt. The simulation shows that as the depth of the partition deepens, the degree of the dominant oxygen concentration will also be different. Considering the interface deflection and temperature gradient for crystal quality, it is better to use a partition depth of 60mm. Different rotation rate will also affect the oxygen concentration. Although this model is very sensitive to rotation and cannot be adjusted significantly, the oxygen concentration will be the lowest when the crystal rotation rises to 4 rpm. If the crucible and the crystal are rotated in the same direction at this time, although the oxygen concentration will increase, the interface oxygen concentration distribution will be uniform and flat. |
| 參考文獻 |
[1] C. Wang, H. Zhang, T.H. Wang, T.F. Ciszek, A continuous Czochralski silicon crystal growth system, Journal of Crystal Growth 250 (2003) 209–214.
[2] H. Xu, Xiaorang Tian, Minority carrier lifetime of n-type mono-crystalline silicon produced by continuous Czochralski technology and its effect on hetero-junction solar cells, Energy Procedia 92 (2016) 708 – 714, 6th International Conference on Silicon Photovoltaics, SiliconPV 2016.
[3] H. Xu, Characterization of n-type mono-crystalline silicon ingots produced by continuous Czochralski (Cz) Technology, Energy Procedia 77 (2015) 658 – 664, 5th International Conference on Silicon Photovoltaics, SiliconPV 2015.
[4] Solaicx, Inc., Santa Clara, CA (US), Weir for Improved Crystal Growth in a Continuous Czochralski Process, United States Patent, Patent No.: US 9,376,762 B2, Jun. 28, 2016.
[5] D.L. Bender, T. Oaks, CA(US), D. E. A. Smith, S. Mateo,CA (US), Weir method for Improved Single Crystal Growth in a Continuous Czochralski Process, United States Patent, Patent No.: US 9,353.457 B2, May 31, 2016.
[6] I.H. Jafri, V. Prasad, A.P. Anselmo, K.P. Gupta, Role of crucible partition in improving Czochralski melt conditions, Journal of Crystal Growth 154 (1995) 280-292.
[7] N. Ono, M. Kida, Y. Arai, K. Sahira, A numerical study of the influence of feeding polycrystalline silicon granules on melt temperature in the continuous Czochralski process, Journal of Crystal Growth 132 (1993) 297-304.
[8] N. Ono, M. Kida, Y. Arai, K. Sahira, A numerical study on oxygen transport in silicon melt in a double-crucible method, Journal of Crystal Growth 137 (1994) 427-434.
[9] W. Zhao, J. Li and L. Liu, Control of Oxygen Impurities in a Continuous-Feeding Czochralski-Silicon Crystal Growth by the Double-Crucible Method, Crystals 2021, 11, 264.
[10] S.K. Kurinec, C. Bopp, H. Xu, Emergence of continuous Czochralski (CCZ) growth for monocrystalline silicon photovoltaics, Emerging Photovoltaic Materials (2019) 1-21.
[11] H. Matsuo, R. B. Ganesh, S. Nakano, L. Liu, Y. Kangawa, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto, Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multi-crystalline silicon for solar cell, Journal of Crystal Growth 310 (2008) 4666-4671.
[12] A.N. Vorob’ev, A.P. Sid’ko, V.V. Kalaev, Advanced chemical model for analysis of Cz and DS Si-crystal growth, Journal of Crystal Growth 386(2014)226–234.
[13] Basic CGSim 11.2, STR Inc., Richmond, VA, USA, (2011).
[14] Y.R. Lee, J. H. Jung, Research for High Quality Ingot Production in Large Diameter Continuous Czochralski Method, Current Photovoltaic Research 4(3) (2016)124-129.
[15] V.V. Voronkov, The Mechanism of Swirl Defects Formation in Silicon, Journal of Crystal Growth 59 (1982) 625-643.
[16] O.A. Noghabi, M. Jomˆaa, M. M’hamdi, Analysis of W-shape melt/crystal interface formation in Czochralski silicon crystal growth, Journal of Crystal Growth 362 (2013) 77–82. |
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