金(111)電化學界面聚噻吩以及含噻吩官能基分子的吸附及反應

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陳慶哲(Ching-Che Chen) 查詢紙本館藏

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化學學系

論文名稱

金(111)電化學界面聚噻吩以及含噻吩官能基分子的吸附及反應
(Gold(111) Electrochemical Interface Adsorption and Reaction of Polythiophene and Molecules Containing Thiophene Functional Groups)

相關論文

★ 岐狀結構材料在鋰電池的應用	★ Adsorption and Electrochemical Polymerization of Pyrrole on Au (100) Electrode as Examine by In Situ Scanning Tunneling Microscopy
★ Synthesis and Characterization of Cyclopentadithiophene (CDT) based Organic Photovoltaic and Pyrazine Contained Hole Transporting Small Molecules	★ 有機碘化物在金、銠、鉑(111)電極和有機二硫醇化物在鉑(111)電極的吸附結構
★ STM研究銥(111)上碘、一氧化碳和一氧化氮的吸附及銅(100)上鎳和鉛的沈積	★ 利用掃描式電子穿隧顯微鏡觀察鍍銅在鉑(111)及銠(111)電極表面
★ 使用in-situ STM和循環伏安儀研究銅和銀在碘修飾的鉑(100)電極之沈積過程	★ 利用in-situ STM觀察銅(100)電極上鉛與鎳的沉積過程
★ 利用in-situ STM觀察硫酸根、氧及碘在釕(001)電極和醋酸、間苯三酚在銠(111)電極的吸附結構	★ 掃描式電子穿隧顯微鏡及循環伏安法對有機碘化物在鉑(111)電極上的研究
★ 半導體碘化鉛薄膜在單結晶銠電極上的研究	★ 利用掃描式電子穿隧顯微鏡觀察汞薄膜在銥(111)電極上鹵素的吸附結構
★ 掃描式電子穿隧顯微鏡研究碘原子對汞在銥(111)、鉑(111)及銠(111)上沈積的影響	★ 掃描式電子穿隧顯微鏡對烷基及芳基硫醇分子在鉑(111)及金(111)上之研究
★ 掃描式電子穿隧顯微鏡研究一氧化碳、硫、硫醇分子及氯在釕(001)上的吸附結構	★ 硫氧化物及聚賽吩衍生物在金、鉑電極上之研究

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摘要(中)

噻吩及其衍生物可廣泛用於製作光電材料及元件，這些分子在金電極上的空
間結構和吸附位向會影響兩者之間的電荷傳輸，進而影響到發光二極體、有機
薄膜電晶體(OTFTs)的性能。同時，有機相或水相中通過陽極氧化可製備聚噻
吩，此材料已被廣泛的應用於光電的研究，我們利用循環伏安法和掃描式電子
穿隧顯微鏡，來研究噻吩衍生物在金(111)電極上的吸附結構與氧化聚合。
金（111）電極上吸附的三噻吩（TT）的結果，顯示 TT 分子與金載體之間
的相互作用、電位、陰離子對 TT 吸附結構和氧化的影響。在硫酸中，電位往
正移動後， TT 分子和硫酸氫根陰離子的覆蓋率增加。STM 顯示在 0.5 V 時產
生(19  6) - TT 的結構，但其二維結構及其吸附位向會隨著電位而改變。相比
之下，在過氯酸中，STM 顯示無序的 TT 結構，這種對比也顯現於 CV 結果，
由此推論 TT 與硫酸氫根有吸引的作用力。STM 也顯示 TT 單體在金(111)電極
上的氧化聚合，電解液的 pH 值對 TT 氧化聚合反應有重要的影響。在 pH5 硫
酸鹽中，可以產生較長(~200 Å)的聚噻吩分子鍊，呈現直線或曲線狀，這和分
子鏈中噻吩的反式和順式構型有關。在 pH 1 的硫酸中，聚噻吩只有幾十埃。
在 0.1 M 過氯酸和硫酸中，DNT-Ph 分子形成有序的吸附分子膜。電位對
DNT-Ph 的吸附結構有極大影響。有序 DNT-Ph 結構僅在-0.1 和 0.4 V(Ag/AgCl)
之間，在金的重排相上觀察到。在-0.15 V， DNT-Ph 從金電極上脫附。在正電
位，金表面逐漸變成 1  1，有序的 DNT-Ph 結構被破壞，分子變得更加緊密並
重新排列。DNT-Ph 主要以其分子平面平行於金電極表面的方式吸附，STM 圖
像中揭示了 DNT-Ph 分子結構的細節，連接噻吩的單鍵，因旋轉產生了 DNTPh 吸附分子的兩種幾何異構物。
為更進一步了解分子結構對吸附的影響，STM 也用來研究 Ph(DTP)2 分子，
發現在過氯酸和硫酸中，重排以及 1X1 相都有整齊的吸附結構，在重排線上的
吸附比在 1X1 上快速且緊密，在硫酸中發現 Ph(DTP)2 在負電位，會於重排線上
產生二層分子結構。

摘要(英)

Thiophene and its derivatives have been important constituents in the study of
organic semiconductors and solar cell research. Their spatial structures and adsorption
configuration can affect the charge transport between molecules and gold electrode,
which is an important process in the operation of light-emitting diodes, organic thinfilm transistors (OTFTs), etc. Polythiophenes have been prepared by anodization in
organic or aqueous phases containing thiophenes or oligothiophenes. Cyclic
voltammetry (CV) and scanning tunneling microscopy (STM) were used to study the
adsorption and polymerization of thiophene and its derivatives on gold (111)
electrode.
First, the adsorption of terthiophene (TT) on the Au (111) electrode was
investigated as a function of potential and anion coadsorption. In H2SO4, we obtained
molecular resolution STM images to show that the pre-deposited TT layer became
more compact with more positive potential. Judged from the STM appearance of TT
admolecule and intermolecular spacing, TT molecule lay horizontally. In contrast, in
perchloric acid, TT admolecules were poorly ordered. This contrast also manifested in
the CV results, showing multiple sharp peaks in H2SO4, but featureless in HClO4.
STM also showed the oxidative polymerization of TT monomers on Au(111)
electrodes, producing ribbon-like oligothiophenes with molecular sizes varying
between 1 and 20 nm in pH 1 and 5 sulfate media. The oligothiophenes could be
linear or curved, which suggests the possible trans and cis configurations of
thiophenes in the molecular chains. High pH value appeared to benefit the formation
of oligothiophenes.
In 0.1 M H2SO4 and HClO4, DNT-Ph molecule was adsorbed in highly ordered
arrays on the reconstructed Au(111). Potential control affected greatly the adsorption
structure of DNT-Ph, as ordered DNT-Ph structures were only observed between −0.1
and 0.4 V. DNT-Ph was desorbed at -0.15 V, whereas the ordered DNT-Ph structures
were destroyed, as Au(111) surface became (1  1) at positive potential. DNT-Ph was
mainly adsorbed with its molecular plane parallel to the surface of the gold electrode.
High resolution STM imaging revealed details in the molecular conformations of
DNT-Ph, as two geometric isomers resulting from rotating the single bond connecting
the thiophene were distinguished by the STM.
In 0.1 M perchloric acid and sulfuric acid, the adsorption of Ph(DTP)2 molecule on
Au(111) electrode was also examined by using in situ STM. Ordered molecular
adlayers were found on the reconstructed and (1  1) phases of the Au(111) electrode
in a wide potential region. The spatial structure of Ph(DTP)2 was formed faster and
more compact on the reconstructed Au(111) than (1  1) phase in sulfuric acid at
negative potential. Local bilayer structure of was observed on the reconstructed lines.

關鍵字(中)

★ 循環伏安法
★ 掃描隧道顯微鏡
★ 三噻吩
★ 自組裝

關鍵字(英)

★ CV
★ STM
★ terthiophene
★ self-assembly

論文目次

摘要 I
Abstract III
誌謝 V
目錄 VI
圖目錄 XII
第一章緒論 1
1-1 有機薄膜電晶體介紹 1
1-1-1有機薄膜電晶體導論 1
1-1-2有機半導體的特性 1
1-1-3有機薄膜應用 2
1-2 聚噻吩(Polythiophene)簡介 2
1-3 電化學方法合成聚噻吩之研究 3
1-4 分子自組裝 4
1-5研究動機 5
第二章實驗部分 9
2-1 化學藥品 9
2-1-1 有機分子 9
2-2 實驗用氣體 9
2-3 金屬線材 10
2-4 實驗儀器 10
2-4-1 循環伏安儀（Cyclic Voltammetry， CV） 10
2-4-2 掃描式穿隧電子顯微鏡（Scanning Tunneling Microscope，STM） 10
2-4-3 研磨機（Grinder Polisher） 11
2-4-4 超音波震盪器（Ultrasonic Vibrator） 11
2-5 實驗步驟 14
2-5-1 金(111)、(100)CV單晶電極製備[14] 14
2-5-2 分子膜的製備 14
2-5-3 循環伏安法(CV)的前處理 15
2-5-4 金（111）STM 電極製備 15
2-5-5 電化學掃描式穿隧電子顯微鏡(EC-STM)的前處理 15
2-5-6 STM 探針製備 16
第三章探討三噻吩在金(111)電極上的吸附情形 18
3-1 電位控制三噻吩(Terthiophene,TT)在硫酸下吸附結構 18
3-1-1 TT分子順反異構物 18
3-1-2 10μM terthiophene修飾於金(111)之CV圖 18
3-1-3 1mM terthiophene修飾於金(111)之CV圖 19
3-1-4 10μM terthiophene修飾於金(111)之STM圖 23
3-1-5 1mM terthiophene修飾於金(111)之STM圖 30
3-1-6 TT在不同濃度硫酸鹽介質中的氧化聚合作用CV圖 37
3-1-7 TT在不同濃度硫酸鹽介質中的氧化聚合作用STM圖 39
3-2 電位控制三噻吩(Terthiophene,TT)在過氯酸下吸附結構 47
3-2-1 10μM terthiophene修飾於金(111)之CV圖 47
3-2-2 10μM terthiophene修飾於金(111)之STM圖 49
第四章探討DNT-Ph在金(111)電極上的吸附情形 51
4-1電位控制DNT-Ph在不同酸下的吸附 51
4-1-1 10µM DNT-Ph 在不同酸下修飾於金(111)之CV圖 51
4-1-2 DNT-Ph單晶結構與順反異構物 55
4-1-3 10µM DNT-Ph在0.1M過氯酸下修飾於金(111)之STM圖 57
4-1-4電位控制下DNT-Ph在金(111)上吸附的空間結構 58
4-1-5 10µM DNT-Ph在0.1M硫酸下修飾於金(111)之STM圖 64
4-1-6 10µM DNT-Ph在0.1M鹽酸下修飾於金(111)之STM圖 66
第五章探討Ph(DTP)2在金(111)電極上的吸附情形 69
5-1電位控制Ph(DTP)2在不同酸下的吸附 69
5-1-1 10µM Ph(DTP)2 在不同酸下修飾於金(111)之CV圖 69
5-1-3 10µM Ph(DTP)2 在過氯酸下修飾於金(111)之STM圖 73
5-1-4 10µM Ph(DTP)2 在硫酸下修飾於金(111)之STM圖 80
第六章結論 83
第七章參考文獻 85
第八章補充資料 90
8-1 電位控制 DNT-Ph 在過氯酸下修飾於金(100) 90
8-1-1 10µM DNT-Ph 在過氯酸下修飾於金(100)之CV圖 90
8-1-2 10µM DNT-Ph在過氯酸下修飾於金(100)之STM圖 92

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指導教授

姚學麟(Shueh-Lin Yau)

審核日期

2022-8-10

推文