旋轉塗佈擴散製程應用於製作poly-Si/SiOx鈍化接觸結構

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姓名

陳威霖(Wei-Lin Chen) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

旋轉塗佈擴散製程應用於製作poly-Si/SiOx鈍化接觸結構
(Spin-on-doped poly-Si/SiOx for passivation contact structur醫)

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至系統瀏覽論文 (2027-7-1以後開放)

摘要(中)

本研究是以塗佈擴散的方式進行多晶矽與氧化層堆疊結構後退火處理，此方法相較於傳統退火製程中通入有毒且易自燃的氣體(POCl3及BBr3)更為安全且廉價。結構中的多晶矽是以磁控濺鍍的方式製備，剛沉積之矽薄膜為本質且非晶的結構，接著使用後退火摻雜磷的方式使本質非晶矽轉為n型多晶矽。在退火的製程上針對退火溫度、退火時間、磷供給溶液量去探討，分析退火後的薄膜表面形貌、結構、電性及鈍化能力，以求得最低的複合電流(J0)為目標找尋最佳退火條件。由結果得知，以9.86 W/cm2的電漿瓦數密度沉積之50 nm的多晶矽，在退火後有最好的複合電流306 fA/cm2、片電阻20 Ω/□及接觸電阻7.46 mΩ cm2。
這種後退火擴散的方式可以在很短的時間提供大量的摻雜載子，藉由在退火參數上的調整產生多晶矽的能帶彎曲效應及場效應鈍化來降低電子電洞複合，是一個可運用於TOPCon結構電池之有潛力的退火方式。

摘要(英)

Among common methods to anneal silicon films, the method of spin-on-doped is the safest one as it does not require any toxic gaseous and is cheaper compared to traditional furnace annealing. In this study, we use magnetron sputtering to deposit polysilicon. The as-deposited silicon films are intrinsic and amorphous structures, and will be converted into n-type polysilicon by the phosphorus diffusion with post-annealing. The annealing temperature, annealing time, and the amount of dopant solution are investigated in the process, and the surface morphologies, structures, electrical properties, and the passivated ability of the annealed films are analyzed. The optimization of the annealing conditions depends on the lowest recombination current (J0). According to the results, passivation contacts at the plasma power density of 9.86 W/cm2 and poly-Si thickness of 50 nm achieve the lowest recombination current of 306 fA/cm2 and sheet resistance of 20 Ω/□, whereas their contact resistivity is still low at 7.46 mΩ cm2. This method can provide a large number of doping carriers in a very short time. The band bending effect and the field passivation of polysilicon are produced by optimal post-annealing treatment to reduce electron-hole recombination. This is a potential way to anneal polysilicon of TOPCon solar cells.

關鍵字(中)

★ 磷摻雜矽薄膜
★ 磁控濺鍍
★ 退火製程
★ 鈍化接觸
★ 特性分析

關鍵字(英)

★ phosphorus doped silicon
★ magnetron sputter
★ post-annealing
★ passivation contact
★ characteristic analysis

論文目次

中文摘要 I
英文摘要 II
目錄 IV
圖目錄 VI
表目錄 VIII
第一章緒論 1
1-1 前言 1
1-2 研究動機及背景 2
第二章基礎理論及文獻回顧 4
2-1 矽晶太陽能電池理論 4
2-2 太陽能電池之基礎參數 5
2-3 不同類型的矽基太陽能電池 11
2-3-1 背表面鈍化射極太陽能電池(Passivated Emitter Rear Contact, PERC) 11
2-3-2 異質接面太陽能電池(Heterojunction with Intrinsic Thin-layer ,HIT) 13
2-3-3 指叉狀背接觸太陽能電池(Interdigitated Back Contact 14
Cell, IBC) 14
2-3-4 穿隧氧化層鈍化接觸太陽能電池(Tunnel Oxide Passivation Contact cell, TOPCon) 15
2-4 TOPCon結構文獻回顧 19
2-4-1 TOPCon多晶矽製備 19
2-4-2 TOPCon退火製程介紹 20
第三章研究方法 27
3-1 實驗概述 27
3-2 實驗流程 28
3-2-1 薄膜電性實驗 28
3-2-2 結構鈍化分析 29
第四章、結果與討論 31
4-1多晶矽的電性分析 31
4-1-1沉積條件的影響 31
4-1-2退火條件的影響 33
4-2薄膜表面形貌 37
4-2-1表面起泡現象 37
4-2-2退火溫度的影響 38
4-3多晶矽鈍化能力分析 39
4-3-1濺鍍條件的影響 39
4-3-2退火條件的影響 41
4-3-3多晶矽/穿隧氧化層結構的鈍化能力 44
第五章結論 45
參考文獻 46

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指導教授

陳一塵(I-Chen Chen)

審核日期

2022-9-27

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