利用低壓化學氣相沉積於矽基(111)上生長sp2鍵結氮化硼薄膜特性之研究

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江仲鈞(Zhong-Jun Jiang) 查詢紙本館藏

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光電科學與工程學系

論文名稱

利用低壓化學氣相沉積於矽基(111)上生長sp2鍵結氮化硼薄膜特性之研究
(Characteristics of sp2-bonded Boron Nitride Thin Films Growm on Silicon (111) by Low Pressure Chemical Vapor Deposition)

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摘要(中)

隨著科技的發展促使消費性電子產品微縮，且產品需要高功能低損耗，為了達
成上述需求，需要突破在半導體上的物理極限，因此二維材料的發展備受關注，而
sp2 鍵結六方氮化硼是其中擁有寬能隙的二維材料，且有出色的化學穩定性，而良好
的介電材料能有效降低電荷的散射，因此本研究使用低壓化學氣相沉積法於矽基板
上生長 sp2 鍵結六方氮化硼薄膜。
本研究主要是改變前驅物的引入方式，並比較兩者製程所生長的 sp
2 鍵結氮化
硼薄膜，在前驅物為非引入式製程的拉曼光譜所量測到的半高寬峰值在高溫爐管後
端的結晶品質較佳，半高寬峰值最佳約為 31 cm-1，XPS 所量測 B:N 為 1.55:1，而透
過 HR-STEM 證實為與六方氮化硼同類 sp
2 鍵結的亂層氮化硼。引入式製程所生長
的 sp2 鍵結氮化硼薄膜，拉曼光譜所量測出來的整體半高寬峰值，隨距離越遠有越
好的趨勢，半高峰值最佳也約為 31 cm-1，而透過 HR-STEM 證實在矽的表層有接近
平面的 sp2 鍵結氮化硼薄膜，XPS 所量測出的 B:N 比從 1.55:1 下降至 1.21:1，兩個
製程薄膜從 FTIR 所量測的 B-N 鍵結以及 B-N-B 鍵結強度有越來越好的趨勢，從橢
偏儀所量測出的結果，整體薄膜的折射率為引入式製程較佳，也從光譜量測以及
Tauc plot 方法中所計算出來的能隙都由引入式製程參數較佳，代表薄膜品質有變好，
而最佳能隙值為 5.76 eV。
最後本研究結論為引入式製程可以避免前驅物受到熱輻射而提早反應，且可以
控制前驅物的加熱溫度，並有效控制反應物的產生，且能藉由氣體流量大小控制薄
膜的生長，而使整體薄膜品質變好。

摘要(英)

As the development of technology, consumer electronics continue to shrink with high
performance and low power consumption. In order to achieve the above requirements, it is
necessary to exceed the physical limits of semiconductors. Therefore the development of
2D materials has attracted great attention, especially the sp2
-bonded hexagonal boron
nitride (h-BN) with a wide energy gap and excellent chemical stability. It is an excellent
dielectric material and can effectively reduce the scattering of charges. In this study, lowpressure chemical vapor deposition has been applied to fabricate sp2
-bonded h-BN thin
films on Si substrates.
The sp2
-bonded BN thin films grown by the two different precursor injection methods.
The full-width half-width maximun (FWHM) of the peaks measured by Raman
spectroscopy of the BN fabricated by non-injection method showed good crystalline
quality at the rear end of the high-temprerature furnace with the best peak width of about
31 cm-1
. And the B:N is 1.55:1 measured by XPS. The sp2
-bonded h-BN random layers
were confirmed by HR-STEM. The FWHM of the peaks measured by Raman spectroscopy
of the sp2
-bonded BN thin films grown by the injection mathod showed better crystalline
quality, with the best peak width of about 31 cm-1
. It was confirmed by HR-STEM that it
is a nearly planar sp2
-bonded h-BN film on the surface of Si. The B:N measured by XPS is
1.21:1. The B-N bonding and B-N-B bonding strengths as the distance in the furnace
measured by FTIR of the h-BN films grown by the both process films showed an increasing
trend. The refractive index measured by the ellipsometer and the energy gap calculated
using Tauc-plot method show the injection method is better than the non-injection method,
which means the crystalline quality of the film is better.
vii
Finally, this study concludes that the injection mathod can control the temperature of
precursors, the production of reactants, and the gas flow to improve the crystalline quality
of the sp2
-bonded h-BN thin films.

關鍵字(中)

★ sp2鍵結氮化硼
★ 低壓化學氣相沉積
★ 矽(111)

關鍵字(英)

★ sp2-bonded Boron Nitride
★ LPCVD

論文目次

目錄
摘要 v
Abstract vi
致謝 viii
目錄 x
圖目錄 xii
表目錄 xvii
第一章緒論 1
1-1 前言 1
1-2 研究動機 3
1-3 文獻回顧 5
1-3-1 六方氮化硼製備方式 5
1-3-2 化學氣相沉積於生長六方氮化硼使用不同前驅物 13
第二章基礎理論 18
2-1 硼烷氨結構與特性 18
2-2 氮化硼晶體結構與性質 19
2-3 六方氮化硼薄膜特性 21
2-3-1六方氮化硼光學特性 21
第三章實驗架構與量測儀器 23
3-1 實驗方法 23
3-1-1 低壓化學氣相沉積法(Low Pressure Chemical Vapor Deposition, LPCVD) 23
3-1-2 實驗流程 24
3-2 薄膜製程方法 26
3-2-1前驅物放置於管內 26
3-2-2引入式前驅物 27
3-3 量測儀器 29
3-3-1拉曼光譜儀 29
3-3-2紫外-可見光近紅外光譜儀(UV-VIS-NIR Spectrometer) 30
3-3-3傅立葉轉換紅外光譜儀(Fourier Transform Infrared Spectrometer, FTIR) 30
3-3-4原子力顯微鏡 31
3-3-5高解析度穿透式電子顯微鏡(High Resolition Transmission Electron Microscope, HR-STEM) 31
3-3-6 X射線光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS) 32
第四章實驗結果與討論 33
4-1 前驅物放置於管內生長Sp2氮化硼薄膜之分析 33
4-1-1 調變氬氣流量之結果分析 33
4-1-2 調變氫氣流量之結果分析 50
4-2 引入式前驅物生長Sp2鍵結氮化硼薄膜之分析 60
4-2-1調變氬氣流量之結果分析 60
4-2-2調變前驅物溫度之結果分析 68
4-3 二硫化鉬生長於氮化硼薄膜之分析 82
第五章結論與未來研究 87
5-1 結論 87
5-2 未來展望 90
參考文獻 92

參考文獻

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指導教授

陳昇暉

審核日期

2023-3-24

推文