氮化鎵電晶體在雙脈衝動態量測後之特性分析

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陳威嘉(Wei-Chia Chen) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

氮化鎵電晶體在雙脈衝動態量測後之特性分析
(Characteristics analysis of GaN HEMTs after double pulse test)

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摘要(中)

本論文為探討蕭特基p型氮化鎵閘極高電子遷移率電晶體在雙脈衝動態量測的研究，主要分成兩個部分進行討論：(1)分析不同負載以及不同量測條件的雙脈衝動態量測在動態特性上的變化；(2)觀察在不同量測條件的雙脈衝動態量測後對元件所產生的影響以及元件後續的恢復情形。

本篇論文使用雙脈衝動態量測對氮化鎵元件進行研究分別進行電感式負載和電阻式負載的雙脈衝動態量測，以接近實際量測電路的雙脈衝動態模擬驗證量測結果，並提出理想的雙脈衝動態電路。為了確認引起震盪的原因，以電感式負載電路針對寄生效應的有無進行模擬，得出轉板寄生效應對模擬的影響。使用不同量測條件進行電阻式負載雙脈衝動態量測，得出不同量測條件使量測波形和動態特性產生的變化，提出波形變化的可能因素，最後得出動態特性出現差異的原因。

在進行電阻式負載雙脈衝動態量測後以ID-VGS特性曲線觀察元件的VTH偏移和恢復的情形。再使用不同外部RG和不同關閉VDS、開啟ID的雙脈衝動態量測觀察元件前後的區別，得出不同外部 RG之間不會影響雙脈衝動態量後的特性，並且主導雙脈衝動態量測後產生影響的是關閉VDS。透過變溫加速恢復的方式，搭配阿瑞尼斯圖，得出陷阱的活化能分別為0.20和0.09 eV，再將結果帶入雙脈衝動態模擬，得出雙脈衝動態量測使ID-VGS變化的機制。

摘要(英)

In this study, a double pulse test of Schottky p-GaN gate high-electron-mobility transistors has been investigated. Based on the double pulse test, is divided into the following two different sections: (1) Analyzed the changes in dynamic characteristics of the double pulse test with different loads and different measurement conditions, (2) Observed the influence and recovery on the device after a double pulse test with different measurement conditions.

In this paper, the double pulse test is used to study the GaN device, the double pulse test of the inductive load and the resistive load is carried out respectively, and verify the measurement results with a double pulse test simulation close to the actual measurement circuit. An ideal double pulse test circuit is proposed. To confirm the cause of the oscillation, the inductive load circuit is used to simulate the with and without parasitic effects, and the influence of the parasitic effect of the PCB on the simulation is obtained. Different measurement conditions are used for the resistive load double pulse test, and the variations of measurement waveform and parameters caused by different measurement conditions are obtained.

After the resistive load double pulse test, the VTH shift and recovery of the device were investigated with the ID-VGS characteristic curve. Observe the difference between the devices before and after the double pulse test with different external RG and different VDS,off. It is concluded that different external RG will not affect the characteristics after the double pulse test, but are dominated by VDS,off. Through accelerating the recovery by varying the temperature, with the Arrhenius plot, the activation energies of the traps are obtained to be 0.20 and 0.09 eV respectively, and then the results are used in the double pulse test simulation to obtain the mechanism of the ID-VGS shift caused by the double pulse test.

關鍵字(中)

★ 氮化鎵高電子遷移率電晶體
★ 臨界電壓偏移
★ 雙脈衝量測
★ 捕獲效應

關鍵字(英)

★ GaN HEMT
★ threshold voltage shift
★ double pulse test
★ trapping effect

論文目次

摘要 VI
Abstract VII
致謝 VIII
目錄 IX
圖目錄 XI
表目錄 XVIII
第一章緒論 1
1.1 前言 1
1.2 氮化鋁鎵/氮化鎵異質結構 2
1.3 氮化鎵電晶體之動態特性文獻回顧 4
1.4 雙脈衝動態量測 13
1.5 研究動機與目的 17
1.6 論文架構 18
第二章蕭特基p型氮化鎵閘極電晶體之雙脈衝動態量測特性分析 19
2.1 元件介紹與雙脈衝動態量測分析 19
2.1.1 元件介紹 19
2.1.2 規格書與實際量測環境之差異 21
2.1.3 理論與實際量測之比較 30
2.2 雙脈衝電路之特性模擬 36
2.2.1 模擬與實際量測之比較 36
2.2.2 理想與非理想之模擬比較 40
2.3 不同條件之雙脈衝動態量測特性分析 44
2.3.1 不同汲極關閉電壓/開啟電流之雙脈衝動態量測特性 45
2.3.2 不同閘極偏壓之雙脈衝動態量測特性 56
2.3.3 不同閘極電阻之雙脈衝動態量測特性 62
2.3.4 不同開關時間之雙脈衝動態量測特性 65
2.4 結論 67
第三章蕭特基p型氮化鎵閘極電晶體在雙脈衝動態量測後之恢復特性分析 69
3.1 雙脈衝動態量測後之恢復特性 69
3.2 不同雙脈衝動態量測條件之恢復特性分析 73
3.2.1 不同閘極電阻的雙脈衝動態量測之恢復特性 73
3.2.2 不同汲極關閉電壓/開啟電流的雙脈衝動態量測之恢復特性 77
3.3 雙脈衝動態量測後之變溫加速恢復特性 90
3.3.1 不同汲極關閉電壓/開啟電流的雙脈衝動態量測之變溫恢復特性 90
3.3.2 不同汲極關閉電壓/開啟電流的雙脈衝動態量測之活化能分析 94
3.3.3 雙脈衝動態量測之捕獲機制分析 95
3.4 結論 102
第四章結論 104
參考文獻 105

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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2022-11-15

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