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姓名	林昀熲(Yun-Chiung Lin)  查詢紙本館藏	畢業系所	化學工程與材料工程學系
論文名稱	銅/銀金屬催化蝕刻法製備可撓曲矽晶微米洞/ 奈米線異質結構及自驅動近紅外光感測之研究
相關論文	★ 規則氧化鋁模板及鎳金屬奈米線陣列製備之研究 ★ 電化學沉積法製備ZnO:Al奈米柱陣列結構及其性質研究 ★ 溼式蝕刻製程製備矽單晶奈米結構陣列及其性質研究 ★ 氣體電漿表面改質及濕式化學蝕刻法結合微奈米球微影術製備位置、尺寸可調控矽晶二維奈米結構陣列之研究 ★ 陽極氧化鋁模板法製備一維金屬與金屬氧化物奈米結構陣列及其性質研究 ★ 水熱法製備ZnO, AZO 奈米線陣列成長動力學以及性質研究 ★ 新穎太陽能電池基板表面粗糙化結構之研究 ★ 規則準直排列純鎳金屬矽化物奈米線、奈米管及異質結構陣列之製備與性質研究 ★ 鈷金屬與鈷金屬氧化物奈米結構製備及其性質研究 ★ 單晶矽碗狀結構及水熱法製備ZnO, AZO奈米線陣列成長動力學及其性質研究 ★ 準直尖針狀矽晶及矽化物奈米線陣列之製備及其性質研究 ★ 奈米尺度鎳金屬點陣與非晶矽基材之界面反應研究 ★ 在透明基材上製備抗反射陽極氧化鋁膜及利用陽極氧化鋁模板法製備雙晶銅奈米線之研究 ★ 準直矽化物奈米管陣列、超薄矽晶圓與矽單晶奈米線陣列轉附製程之研究 ★ 尖針狀矽晶奈米線陣列及凖直鐵矽化物奈米結構之製備與性質研究 ★ 金屬氧化物奈米結構製備及其表面親疏水性質之研究
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摘要(中)	在本研究中，我們首度導入銅/銀金屬催化蝕刻法在(001)矽單晶晶片上製備微米尺度之倒金字塔型結構，並在其結構表面製備準直矽奈米線陣列，形成大面積且具矽單晶奈米線/倒金字塔雙尺度結構，我們保留矽單晶奈米線底部之銀顆粒，接著再以無電鍍技術在矽奈米線上披覆銀金屬奈米顆粒，藉由表面電漿共振效應以及微奈米結構優異的高光捕獲率和大比表面積來增進可見光及紅外光之吸收率。由光學性質量測結果證實此結構於可見光至近紅外光波段(400-1650 nm)皆具有優異的寬波段光吸收特性，而以940 nm之近紅外光波段進行光感測性質之結果更進一步指出，本實驗所製備之新穎矽基光感測器可在不施加額外電壓下展現出優異的近紅外光響應度、高靈敏度、高穩定度及快速的響應恢復時間等特性。 接著為了製備出超薄可撓曲感光元件，本研究成功調配銅金屬催化蝕刻配方，在薄化試片的同時亦在表面製備出凹槽型結構，套用上述之製程技術，成功製備出超薄銀/矽蕭基接面光感測元件，相信本研究所開發簡單、快速之新穎銅/銀金屬催化蝕刻法之微奈米異質結構及無電鍍技術，對研發各種先進矽基光電元件及寬帶光感測器將能提供新製程設計及技術優化之參考。
摘要(英)	Infrared detectors are commonly applied in various fields, such as security monitoring, biometric identification, and digital healthcare. Silicon is the most commonly used material in optical sensors, and fabrication of rough structures and nanowires on Si are known to increase the light trapping ability of visible light. However, the bandgap limitation of silicon at 1.12 eV makes it unable to effectively absorb infrared light. In order to overcome this shortcoming, this study introduced the copper/silver metal-assisted chemical etching method for the first time to prepare a micron-scale inverted-pyramid structure, followed by the fabrication of straight silicon nanowires (SiNWs) on the surface of the structure, forming an extensive SiNWs/inverted-pyramid dual-scale structure. Then, Ag nanoparticles (AgNPs) are deposited on the SiNWs using a non-electroplating technique, improving the absorption efficiency of visible and infrared light through surface plasmon resonance effects, the high light-trapping efficiency and large specific surface area of the nano-microstructure. The results of UV-Vis and NIR spectroscopic measurements confirmed that the structure has broadband light absorption characteristics from the visible to near-infrared region (400-1600 nm). Moreover, the results of photo-sensing properties at 940 nm near-infrared light further indicate that our novel silicon photodetector exhibits high near-infrared photo responsivity, good stability, and fast response and recovery time without applying additional voltage. In order to fabricate ultra-thin and flexible photodetector, this study successfully formulated a copper metal-assisted-etching solution and simultaneously created grooved structures on the silicon surface while thinning the samples. By applying the aforementioned fabrication techniques, ultra-thin silver/silicon Schottky junction photodetectors were successfully developed. It is believed that the simple and original copper/silver metal-assisted chemical etching method of dual-scale structures and electroless plating technology developed in this study can provide a reference for new process design and technology optimization for the development of various advanced silicon-based optoelectronic devices and broadband photodetectors.
關鍵字(中)	★ 銅金屬催化蝕刻 ★ 倒金字塔結構 ★ 微奈米異質結構 ★ 自驅動近紅外光感測元件 ★ 超薄可撓曲感光元進	關鍵字(英)
論文目次	目錄 第一章 前言及文獻回顧 1 1-1 前言 1 1-2 矽單晶表面粗糙化結構之製備及應用 3 1-2-1 凸起型結構之製程技術 3 1-2-2 凹槽型結構之製程技術 4 1-3 一維矽單晶奈米線之製備及應用 6 1-4 可撓曲奈米線元件製備及應用 7 1-4-1 矽奈米線分散塗佈製程 7 1-4-2 矽奈米線轉附製程 7 1-4-3 矽基材減薄製程 8 1-5 超薄可撓曲型之感測元件 9 1-5-1 超薄可撓曲元件之應用 9 1-5-2 超薄可撓曲矽晶元件之製程 9 1-6 光感測元件 10 1-6-1 金屬與半導體之接觸理論 10 1-6-2 蕭基接面之光感測機制 12 1-7 紅外線光感測器 13 1-8 低維金屬半導體奈米材料之特性探討 14 1-9 研究動機及目標 15 第二章 實驗步驟及儀器設備 17 2-1 實驗步驟 17 2-1-1 矽單晶基材使用前處理 17 2-1-2 銅金屬催化蝕刻法製備矽單晶/倒金字塔及正金字塔結構 17 2-1-3 一步驟製備超薄可撓曲凹槽結構之矽單晶基材 18 2-1-4 兩步驟金屬催化無電鍍蝕刻法製備微奈米異質陣列結構 18 2-1-5 低溫無電鍍沉積銀金屬奈米粒子 19 2-1-6 濺鍍鋁金屬薄膜 19 2-1-7 光感測元件之製備 19 2-2 試片分析 19 2-2-1 掃描式電子顯微鏡 19 2-2-2 穿透式電子顯微鏡 20 2-2-3 可見光-近紅外光光譜儀 20 2-2-4 影像式水滴接觸角量測儀 21 2-2-5 近紅外光偵測系統 21 第三章 結果與討論 22 3-1製備矽單晶倒金字塔結構 22 3-1-1各蝕刻液濃度變化對矽單晶表面形貌之影響 23 3-1-2矽單晶倒金字塔結構形成之機制探討 25 3-2 雙面雙尺度一維矽單晶微奈米異質結構 27 3-2-1 雙面一維矽單晶奈米線/倒金字塔微奈米異質結構之製備 27 3-2-2可見光-近紅外光積分球光譜儀分析 28 3-3 矽晶異質結構之近紅外光偵測元件 30 3-3-1 銀/矽單晶微奈米異質結構之蕭基接面製備 30 3-3-2單面及雙面銀/矽單晶微奈米異質結構蕭基接面之近紅外光感測特性分析與探討 32 3-3-3 銀/矽單晶微奈米異質結構蕭基接面及其背電極結構於近紅外光感測之特性分析與探討 33 3-3-4 銀/矽單晶奈米線/倒金字塔及正金字塔微奈米異質結構蕭基接面之近紅外光感測特性分析與探討 34 3-4 超薄可撓曲之矽單晶微奈米異質結構之近紅外光偵測元件 38 3-4-1 超薄雙面矽單晶倒金字塔結構之可撓曲基材製備 38 3-4-2 超薄矽單晶基材上製備銀/矽單晶奈米線/倒金字塔及正金字塔微奈米異質結構 41 3-4-3 可見光-近紅外光積分球光譜儀分析 42 3-4-4 超薄可撓曲銀/矽單晶奈米線/倒金字塔及正金字塔微奈米異質結構蕭基接面近紅外光感測特性分析探討 43 3-4-5 超薄可撓曲矽晶近紅外光偵測元件之彎曲性能分析與探討 45 3-5 矽晶近紅外光偵測元件之靈敏度、響應度以及響應時間 45 第四章 結論與未來展望 48 參考文獻 49 表目錄 59 圖目錄 61
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指導教授	鄭紹良	審核日期	2023-8-15
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