以二維電洞氣感測 DNA

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姓名

徐健程(Chien Cheng Hsu) 查詢紙本館藏

畢業系所

光電科學研究所碩士在職專班

論文名稱

以二維電洞氣感測 DNA
(Two Dimensional Hole Gas for DNA Sensing)

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摘要(中)

DNA 檢測是一項關鍵的生物技術，用於檢測個體間的遺傳差異。
本研究在 Si 基板上成長 AlGaN/GaN/BN，得到高濃度的二維電洞氣
(two dimensional hole gas, 2DHG)，並以此測試 DNA 的感測效能。
使用 Si 基板和不同材料(AlGaN、BN..)製成的半導體元件具有以
下優點，Si 成本低、且與成熟的 CMOS 技術相容，極具商業價值。
其次，透過選擇不同的材料堆疊，可以調節元件的能隙和界面特性，
進一步優化其檢測性能。此外，使用電壓和電流差異檢測 DNA 差異
可簡化實驗流程，並提供快速、高效的檢測結果。
然而，在未來的研究中需要克服以下問題，需要進一步研究不同材
料堆疊對檢測性能的影響，以找到最佳組合並最大程度地提高靈敏度
和準確性。其次，需要解決樣本前處理、干擾和檢測靈敏度等方面的
挑戰，特別是在高濃度 DNA 樣本的檢測中。最後，需要開展更深入
的研究，以確定電壓和電流差異與 DNA 差異之間的關聯性，並進一
步改進檢測的準確性和可靠性。總的來說，使用 Si 基板和不同材料
堆疊的半導體元件以電壓和電流差異檢測 DNA 差異具有優越的靈敏
度、調控性和高效性。未來的研究應該集中在克服上述挑戰，以推動
這一 DNA 檢測方式進一步發展。

摘要(英)

DNA testing is a crucial biotechnology used to detect genetic
differences between individuals. This study investigates the feasibility of
DNA testing by the two dimensional hole gas (2DHG) formed by
AlGaN/GaN/BN grown on Si substrates.
The semiconductor devices fabricated on Si substrates with different
materials (AlGaN, BN, etc.) offer several advantages. Si is cost effective
and compatible with the mature CMOS technology, being suitable for
commercialization. Furthermore, by selecting different material stackings,
the device′s bandgap and interface properties can be adjusted to further
optimize its detection performance. Additionally, detecting DNA
differences through voltage and current variations simplifies the
experimental process and provides rapid and efficient results.
However, several challenges need to be addressed in future research.
It is necessary to further investigate the impact of different material
stackings on detection performance to identify the optimal combination
and maximize sensitivity and accuracy. Furthermore, challenges related to
sample preparation, interference, and detection sensitivity need to be
addressed, particularly in the detection of high-concentration DNA
samples. Finally, more in-depth research is needed to determine the
correlation between voltage and current variations and DNA differences.

關鍵字(中)

★ DNA
★ 感測器
★ 二維電洞氣

關鍵字(英)

★ DNA
★ Sensing
★ Two Dimensional Hole Gas

論文目次

目錄
論文摘要.................................................................................................................... VII
Abstract.....................................................................................................................VIII
致謝..............................................................................................................................IX
目錄...............................................................................................................................X
圖目錄........................................................................................................................ XII
表目錄.......................................................................................................................XIII
第一章緒論............................................................................................................1
1.1 前言............................................................................................................1
1.2 AlGaN 生醫感測器的發展現況..............................................................1
1.3 AlGaN 生醫感測器的技術瓶頸..............................................................2
1.4 二維電洞氣的形成原理(Two-dimensional hole gas) ....................................3
1.5 研究動機及章節架構.................................................................................4
第二章實驗原理、步驟與儀器............................................................................5
2.1 磊晶結構與元件製備......................................................................................5
2.2 DNA 樣本的製備............................................................................................7
2.3 儀器介紹電源供應器 SMU(Keysight 2400)..................................................8
第三章結果分析與討論......................................................................................10
3.1 DNA 濃度對 AlGaN 電壓電流之影響 ........................................................10
3.2 使用不同濃度樣本對 AlGaN 製成的 IV 的表現........................................16
3.2.1 1’40’’ AlGaN/ 60-min GaN/BN/Si 在電壓電流上的表現(M5703) .16
3.2.2 10s AlN -Si(100)在電壓電流上的表現 (M5796) ............................20
XI
3.2.3 5s AlN-Si(100)在電壓電流上的表現(M5788) .................................24
3.2.4 3s AlN-Si(100)在電壓電流上的表現(M5784) .................................28
3.2.5 不同 AlGaN 比對 SI-Si(100)電壓電流上的表現(SI-Si(100)) .........32
3.2.6 比對不同製程 M5742 電壓電流上的表現(M5742).........................36
第四章結論與未來瞻望......................................................................................42
4.1 結論................................................................................................................42
4.2 未來瞻望........................................................................................................43

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指導教授

賴昆佑(Kun-Yu Lai)

審核日期

2023-7-17

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