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姓名	黃千綺(Chien-Chi Huang)  查詢紙本館藏	畢業系所	材料科學與工程研究所
論文名稱	藉由選擇鹵化鋅前驅物以優化銦鋅磷量子點的光學特性及其於白光發光二極體之應用 (Optimizing the Optical Properties of InZnP Quantum Dots through the Selection of Zinc Halide Precursors and the Application in White Light Emitting Diodes)
相關論文	★ 具有高活性和高穩定性鈀鐵合金氫化物應用於酸性介質析氫反應之研究 ★ 高效能直接甲醇燃料電池陽極觸媒之製備、改質與鑑定研究 ★ 金-白金陰極催化劑應用於氧氣還原反應之製備與鑑定：金合金化以及氧化鈰添加之提升效應 ★ 利用熱處理改質引發表面偏析現象以增進鉑釕觸媒之甲醇氧化反應活性 ★ 藉添加鈀鎳與鈀鈷合金觸媒提升氮化鋰的氫化性質 ★ 鉑釕觸媒應用於乙醇氧化反應之結構與活性關係研究：錫的添加和氧化處理之提升效應 ★ 硼氫化鋰脫氫性質之研究：以添加鈀氫氧化鎳觸媒提升其脫氫反應 ★ 表面活性劑對硒化鎘及硒化鋅鎘奈米合金在高溫有機金屬製程中的效應 ★ 鈀銅觸媒應用於鹼性溶液中之乙醇氧化反應其結構與活性關係研究 ★ 鈀鈷添加物對於硼氫化鋰及鋰硼氮氫四元化合物脫氫性質之提升效應 ★ 成長溫度及配位體比例對硒化鋅鎘量子點光學性質的效應 ★ 製備、改質及鑑定高效能鈀鈷觸媒應用於陰極氧還原反應 ★ 金屬(鈰、鈷、錫)氯化物和氧化物的添加對於硼氫化鋰脫氫性質之提升效應 ★ 界面活性劑比例及沉澱現象對硒化鎘量子點光學性質的效應 ★ 雙元鉑基合金奈米顆粒及奈米棒之製備及其應用於氧氣還原反應 ★ 錳的添加對於鉑鈷觸媒氧氣還原活性提升效應
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摘要(中)	隨著科技的進步，白光發光二極體(white light-emitting diodes, WLEDs)逐漸取代白熾燈和螢光燈，成為固態照明和背光顯示器的主流選擇。量子點(quantum dots, QDs)憑藉其獨特的發光特性，已經超越傳統的螢光粉，成為新一代發光材料的代表。在所有量子點種類中，磷化銦(indium phosphide, InP)量子點因其環境友善性和相比於傳統II-VI半導體的穩定性及共價特性而受到特別關注。 本研究中，通過在InP量子點合成過程中加入鹵化鋅前驅物，成功合成了銦鋅磷(InZnP)合金奈米晶體，以改善其光學特性。鋅的添加促進了InZnP合金奈米晶體的形成，與純InP相比，其具有更寬的能隙能量。X射線吸收光譜(X-ray absorption spectroscopy , XAS)的結果證實了合金具有顯著的富鋅表面層，這一特性不僅使InZnP核心和硫化鋅(zinc sulfide, ZnS)殼層間的晶格常數過渡更為平滑，而且促進了ZnS殼層的生長。與InP核心相比，InZnP合金結構減輕了InP的表面缺陷態，從而顯著提升量子效率。此外，本研究突顯不同鹵化鋅前驅物對量子點光學特性的影響。特別是，使用高反應性氯化鋅合成的量子點核心展現了增強的Zn-O鍵結，能有效減少InP 量子點的固有表面缺陷。殼層形成後，量子點的光學特性得到了明顯提升，進一步凸顯在量子點合成中選擇合適前驅物的重要性，並且強調前驅物的選擇對量子點光學性質方面的關鍵作用，以及對於最終元件效能的影響。 在照明應用中，CS-Cl/SSN-LED元件顯示出極佳的演色性(color rendering index, CRI)為83。在顯示器應用方面，CS-Br/KSF-LED元件達到了110 % NTSC (National Television System Committee)的色域覆蓋率，使其成為未來顯示技術的領先競爭者。總體而言，此研究成果不僅彰顯了InZnP/ZnS量子點在推動LED技術發展方面的巨大潛力，也在提升發光效率和色彩演色方面取得了顯著的進展。
摘要(英)	With the advancement of technology, white light-emitting diodes (WLEDs) have increasingly replaced incandescent and fluorescent lamps, becoming widely used in solid-state lighting and backlight displays. Quantum dots (QDs) have emerged as a new generation of luminescent materials, replacing traditional phosphors owing to their unique luminescent properties. Among them, indium phosphide (InP) QDs are notable not only for their environmental sustainability but also for their superior covalent properties and better stability compared to conventional II-VI semiconductors, such as cadmium-based ones. In this study, zinc halide precursors were incorporated during the synthesis of InP QDs to generate InZnP alloy nanocrystals, aimed at improving their optical properties. The addition of zinc promotes the formation of InZnP alloy nanocrystals, which possess a wider band gap energy compared to pure InP. X-ray absorption spectroscopy revealed that the alloy displays a significant zinc-rich surface layer, leading to a smoother lattice parameter transition at the interface between the InZnP core and the zinc sulfide (ZnS) shell. This change facilitates the growth of the ZnS shell. The InZnP alloy structure, compared with the InP core, alleviates InP defect states, thereby significantly improving the quantum yield (QY) of the InZnP/ZnS QDs. Additionally, this study highlights the substantial impact of different zinc halide precursors on the optical properties of QDs. Specifically, QDs synthesized with highly reactive zinc chloride exhibit increased Zn-O bonds, effectively reducing the inherent surface defects of InP QDs. After the formation of the shell, the optical properties of the QDs were significantly enhanced. This underscores the importance of selecting appropriate precursors in the synthesis of QDs, highlighting the pivotal role of precursor choice in influencing the optical characteristics of the QDs, and its decisive impact on the optical performance of the final product. For lighting applications, the CS-Cl/SSN-LED device has been innovatively designed, boasting an impressive color rendering index (CRI) of 83. In display applications, the CS-Br/KSF-LED device achieves an exceptional 110% coverage of the National Television System Committee (NTSC) color gamut, positioning it as a leading contender for future display technologies. Overall, these findings underscore the potential of InZnP/ZnS QDs in advancing LED technologies, with notable improvements in photoluminescence efficiency and color rendering capabilities.
關鍵字(中)	★ 量子點 ★ 磷化銦 ★ 鹵化鋅 ★ 白光發光二極體 ★ 演色性 ★ 色域	關鍵字(英)	★ quantum dots (QDs) ★ indium phosphide (InP) ★ zinc halides ★ white light-emitting diodes (WLEDs) ★ color rendering index (CRI) ★ color gamut
論文目次	摘要 i Abstract ii 致謝 iv Table of Contents vi List of Figures viii List of Tables x Chapter 1 Introduction 1 1.1 InP QDs 2 1.2 Synthetic Methods of InP QDs 6 1.3 Surface Passivation for Enhanced Performance 8 1.4 Zn-In Interfacial Alloying 11 1.5 Motivation and Approach 13 Chapter 2 Experimental Section 14 2.1 Chemicals and Materials 14 2.2 Preparation of InZnP and InZnP/ZnS QDs 15 2.3 Preparation of WLEDs 17 2.4 Characterization of QDs and WLEDs 19 2.4.1 X-ray diffraction (XRD) 19 2.4.2 Transmission electron microscopy (TEM) 19 2.4.3 Inductively coupled plasma-optical emission spectrometry (ICP-OES) 19 2.4.4 Ultraviolet-visible absorption spectrometer (UV-Vis) 21 2.4.5 Fluorescence spectrophotometer (FL) 21 2.4.6 X-ray photoelectron spectroscopy (XPS) 21 2.4.7 X-ray absorption spectroscopy (XAS) 21 2.4.8 QY measurement 22 2.4.9 Phosphor spectrum measuring system 22 2.4.10 LED measurement system 22 2.4.11 Stability test of InZnP/ZnS QDs 23 2.4.12 Stability test of WLEDs 23 Chapter 3 Results and Discussion 24 3.1 The Physical and Optical Properties of C-X QDs 24 3.1.1 Materials characterizations 24 3.1.2 The optical properties of C-X QDs 33 3.1.3 Summary 35 3.2 The Physical and Optical Properties of CS-X QDs 36 3.2.1 Materials characterizations 36 3.2.2 The optical properties and stability of CS-X QDs 39 3.2.3 Summary 42 3.3 The Application of CS-X QDs in WLED 46 3.3.1 Optical properties of a 3020 SMD blue-emitting LED and phosphor materials 46 3.3.2 Electroluminescent properties and stability test of CS-Cl/SSNx-LEDy 46 3.3.3 Electroluminescent properties and stability test of CS-Br/KSFx-LEDy 51 3.3.4 Summary 55 Chapter 4 Conclusions 59 References 61
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指導教授	王冠文(Kuan-Wen Wang)	審核日期	2024-1-11
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