多層堆疊氮化鋁壓電薄膜之應力梯度與變形行為研究

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姓名

袁寧袖(Ning-Hsiu Yuan) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

多層堆疊氮化鋁壓電薄膜之應力梯度與變形行為研究
(Stress Gradient and Deformation Behavior of Multilayer Stacked AlN Piezoelectric Films)

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至系統瀏覽論文 (2028-7-31以後開放)

摘要(中)

近年來，由於微機電系統(Micro Electro Mechanical Systems, MEMS)在各種應用中表現出色，因此對MEMS元件興趣日益增加，MEMS元件通常由多層沉積的薄膜以及不同材料（如矽、金屬、陶瓷材料等）而組成，其中一種設計即為氮化鋁（AlN）材料組成一種由兩層AlN夾在金屬電極之間的雙向性結構，在這種不同材料的堆疊過程中，其中殘留應力在微觀尺度中最為顯著影響製造的元件的性能和可靠性來源之一。因此，在晶圓級別上評估和調節殘留應力在活性層分佈和變化非常重要，也是評估現代MEMS元件性能的關鍵之一。本文研究了物理氣相沉積法製造薄膜過程中產生的殘留應力的原因，介紹了減少殘留應力的可能途徑及表徵殘留應力的技術，並透過有限元素分析不同MEMS結構在各種製造過程中產生的殘留應力對其特性的影響。透過有限元素的分析可以了解MEMS的多種物理場相關的技術領域知識，並提供了半導體製造過程中獲得更好地設計的參考依據。

摘要(英)

In recent years, there has been a growing interest in Micro Electro Mechanical Systems (MEMS) due to their remarkable performance across various applications. MEMS devices are typically comprised of multiple layers of deposited thin films and various materials, including silicon, metals, ceramics, and more. One specific design utilizes aluminum nitride (AlN) material to create a bidirectional structure with two AlN layers sandwiched between metal electrodes. During the stacking process of these different materials, residual stress emerges as a significant factor that can significantly impact the performance and reliability of microscale manufactured components. Therefore, it is crucial to evaluate and regulate the residual stress at the wafer level to assess its distribution and variations within the active layer. This assessment is key to evaluating the performance of modern MEMS devices. This study focuses on investigating the causes of residual stress generated during the physical vapor deposition (PVD) process for thin film fabrication. It introduces potential approaches to mitigate residual stress and techniques for characterizing it. Finite element analysis is employed to examine the impact of residual stress on the characteristics of different MEMS structures during various manufacturing processes. Through finite element analysis, a deeper understanding of the various physical field-related aspects of MEMS is gained, providing valuable insights for optimizing designs in semiconductor manufacturing processes.

關鍵字(中)

★ 殘留應力
★ 應力梯度
★ 微機電系統

關鍵字(英)

★ residual stress
★ stress gradient
★ MEMS

論文目次

中文摘要 ............................................................................................................ i
Abstract .............................................................................................................. ii
致謝 .................................................................................................................. iii
圖目錄 .............................................................................................................. vi
表目錄 ............................................................................................................ viii
第一章緒論...................................................................................................... 1
1-1 前言 ............................................................................................................. 1
1-2 研究動機與目的 ......................................................................................... 2
第二章文獻整理與基本回顧 .......................................................................... 4
2-1 薄膜沉積 .................................................................................................... 4
2-1-1 薄膜沉積原理.......................................................................................................... 4
2-1-2 物理氣相沉積法(PVD) ........................................................................................... 5
2-2 電漿簡介 .................................................................................................... 8
2-2-1 電漿形成理論.......................................................................................................... 8
2-2-2 磁場中帶電粒子的運動........................................................................................ 11
2-3 殘留應力種類與成因 ............................................................................... 13
2-4 氮化鋁(Aluminum Nitride，AlN)薄膜介紹............................................. 15
第三章研究架構與模擬方法 ........................................................................ 17
3-1 研究架構 ................................................................................................... 17
3-2 拉曼散射原理 ........................................................................................... 18
3-2-1 顯微拉曼光譜儀(Micro Raman) ........................................................................... 19
v
3-3 有限元素模擬分析 .................................................................................... 23
3-3-1 有限元素法基本概念............................................................................................. 23
3-3-2 COMSOL 有限元素分析軟體 ............................................................................... 24
3-3-3 邊界與參數設定..................................................................................................... 26
3-3-5 元件幾何結構變化................................................................................................ 32
第四章結果與討論 ........................................................................................ 34
4-1 活性層厚度對撓度模擬結果 .................................................................... 35
4-2 驅動電壓對撓度模擬結果 ........................................................................ 37
4-4 不同幾何形狀的聲壓級 ............................................................................ 38
第五章結論.................................................................................................... 42
參考文獻 ......................................................................................................... 44

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指導教授

利定東(Ting-Tung Li)

審核日期

2023-7-27

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