矽晶圓上具有隔離氧化層非晶質薄膜發光二極體之光電特性

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劉文雄(Wen-Hsiung Liu) 查詢紙本館藏

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論文名稱

矽晶圓上具有隔離氧化層非晶質薄膜發光二極體之光電特性
(Optoelectronic Characteristics of SiO2-Isolated Amorphous TFLEDs on c-Si Wafer)

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摘要(中)

本研究探討的主題是在n-型矽晶圓上研製具有隔離氧化層的非晶碳化矽氫(a-SiC:H)、非晶氮化矽氫(a-SiN:H) 和電壓調色的非晶碳（氮）化矽氫[a-SiC(N):H]等n-i-p薄膜發光二極體，並量測及分析其光電特性。這些元件在n層及p層區域均分別採用組成摻雜梯度能隙(composition-dopant-graded gap)結構，以增加載子注入效率，提升元件的發光亮度、降低元件的操作電壓。在元件製程方面，利用在陰極附加不銹鋼濾網的電漿助長化學氣相沈積(PECVD)系統，以減少薄膜在沈積時遭電漿轟擊所造成的傷害，故可獲得品質較佳的非晶薄膜，並以最佳化退火製程，改善薄膜發光二極體的光電特性。所完成的非晶碳化矽氫(a-SiC:H) n-i-p 薄膜發光二極體的元件發光亮度在電流密度等於600 mA/cm2時為8100 cd/m2，發光臨限電壓值為19.1 V，電激發光(EL)頻譜峰值波長為600 nm，。而另一非晶氮化矽氫(a-SiN:H) n-i-p薄膜發光二極體的電激發光(EL)頻譜峰值波長為528 nm，發光臨限電壓值為15.4 V，，元件發光亮度在電流密度等於300 mA/cm2時為370 cd/m2。而電壓調色的非晶碳（氮）化矽氫[a-SiC(N):H] 薄膜發光二極體，在不同的偏壓下，電激發光(EL)頻譜峰值波長會在565 nm與670 nm間移動。

摘要(英)

In order to investigate the feasibility of fabricating Si-based visible light-emitting diodes (LEDs) with common well-developed silicon processing technology, the SiO2-isolated n [phosphorous-doped hydrogenated amorphous silicon (n-a-Si:H) ] - i [intrinsic hydrogenated amorphous silicon-carbon (i-a-SiC:H) or intrinsic hydrogenated amorphous silicon-nitride (i-a-SiN:H)] - p [boron-doped hydrogenated amorphous silicon (p-a-Si:H)] thin-film LEDs (TFLEDs) were fabricated on n-type c-Si wafers. These SiO2-isolated TFLEDs would emit red-orange, green-white light and even light with voltage-tunable color.
The red-orange TFLED revealed a highest brightness of 8100 cd/m2 at an injection current density of 600 mA/cm2, an electroluminescence (EL) peak wavelength at 600 nm, and an EL threshold voltage = 19.1 V. The green-white TFLED had a brightness of 370 cd/m2 at an injection current density of 300 mA/cm2, an EL peak wavelength at 528 nm, and an EL threshold voltage = 15.4 V. The voltage-tunable TFLEDs had the EL peak wavelength ranged from 565 nm to 670 nm at different applied voltages.
The experimental results demonstrated the feasibility of developing Si-based visible light-emitting devices on c-Si substrate.

關鍵字(中)

★ 薄膜發光二極體
★ 非晶質
★ 矽晶圓
★ 氧化隔離層

關鍵字(英)

★ TFLEDs
★ c-Si
★ SiO2-Isolated
★ Amorphous
★ a-SiC:H
★ a-SiN:H

論文目次

Abstract.....................................................Ⅲ
Table Captions...............................................Ⅳ
Figure Captions..............................................Ⅴ
Chapter 1 INTRODUTION.......................................1
Chapter 2 EXPERIMENTAL PROCEDURES...........................5
2.1 Preparations of Various Thin-Films.......................5
2.1.1 Deposition System....................................5
2.1.2 Film Depositions.....................................7
2.2 Device Synopsis.........................................13
2.3 Fabrications of SiO2-Isolated TFLEDs on c-Si............17
2.4 Measurement Techniques..................................28
2.4.1 Optical Bandgap of Amorphous film...................28
2.4.2 EL Intensity and Brightness.........................28
2.4.3 EL Spectrum.........................................28
Chapter 3 RESULTS AND DISCUSSIONS..........................33
3.1 Red-Orange TFLED (Device 1)..........................33
3.2 Green-(Blue)-White TFLED (Device 2)..................33
3.3 Voltage-Tunable TFLEDs (Devices 3 and 4).............34
3.4 Characteristics of the Finished TFLEDs...............38
3.4.1 Current-Conduction Mechanism.....................38
3.4.1.1 Ideality Factor..............................38
3.4.1.2 Low Electric-Field Region....................38
3.4.1.3 High Electric-Field Region...................40
3.4.2 B-V Characteristics..............................43
3.5 EL Spectra...........................................43
3.6 Effects of Annealing....................................55
Chapter 4 CONCLUSIONS......................................68
REFERENCES..................................................70

參考文獻

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指導教授

洪志旺(Jyh-Wong Hong)

審核日期

2002-6-24

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