參考文獻 |
[1] J. S. Wang, C. G. Shih, W. H. Chang, J. R. Middleton, P. J. Apostolakis, and M. Feng, “11 GHz Bandwidth Optical Integrated Receivers Using GaAs MESFET and MSM Technology,” IEEE Photo. Technol. Lett., Vol. 5, No. 3, pp. 316-318, 1993.
[2] G. K. Chang, W. P. Hong, J. L. Gimlett, R. Bhat, C. K. Nguyen, G. Sasaki, and J. C. Young, “A 3 GHz Transimpedance OEIC Receiver for 1.3-1.55 μm Fiber-Optic Systems,” IEEE Photo. Technol. Lett., Vol. 2, No. 3, pp. 197-199, 1990.
[3] E. Bassous, M. Scheuermann, V. P. Kesan, M. Ritter, J. M. Halbout, and S. S. Lyer, “A High-Speed Silicon Metal-Semiconductor-Metal Photodetector Fully Integrable with (Bi)CMOS Circuits,” IEDM, pp. 187-190, 1991.
[4] M. Loken, L. Kappius, S. Manti, and C. Buchal, “Fabrication of Ultrafast Si Based MSM Photodetector,” Electron. Lett., Vol. 34, No. 10, pp. 1027-1028, 1998.
[5] J. Lu, R. Surridge, G. Pakulski, H. van Driel, and J. M. Xu, “Studies of High-Speed Metal-Semiconductor-Metal Photodetector with a GaAs/AlGaAs/GaAs Heterostructure,” IEEE Trans. Electron Devices, Vol. 40, No. 6, pp. 1087-1092, 1993.
[6] S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, Inc., 2nd ed, Chap 10, pp. 613, 1985.
[7] M. Y. Liu, S. Y. Chou, S. Alexandrou, C. C. Wang and T. Y. Hsiang, “110 GHz Si MSM Photodetectors,” IEEE Trans. Electron Devices, Vol. 40, No. 11, pp. 2145-2146, 1993.
[8] Y. Liu, W. Khalil, P. B. Fischer, and S. Y. Chou, “Nanoscale Ultrafast Metal-Semiconductor-Metal Photodetectors,” IEEE Trans. Electron Devices, Vol. 39, No. 11, pp. 2674-2675, 1992.
[9] S. Y. Chou, Y. Liu, P. B. Fischer, “Tera-Hertz GaAs Metal-Semiconductor-Metal Photodetectors with Nanoscale Finger Spacing and Width,” IEDM, pp.745-748, 1991.
[10] H. Matsuura, A. Matsuda, H. Okushi, T. Okuno, and K. Tanaka, “Metal-Semiconductor Junctions and Amorphous-Crystalline Heterojunctions Using B-Doped Hydrogenated Amorphous Silicon,” Appl. Phys. Lett., Vol. 45, No. 4, pp. 433-435, 1984.
[11] H. Matsuura, T. Okuno, H. Okushi, and K. Tanaka, “Electrical Properties of n-Amorphous/p-Crystalline Silicon Heterojunctions,” J. Appl. Phys., Vol. 55, No. 4, pp. 1012-1019, 1984.
[12] H. Mimura, and Y. Hatanaka, “Carrier Transport Mechanisms of p-Type Amorphous-n-Type-Crystalline Silicon Heterojunctions,” J. Appl. Phys., Vol. 71, No. 5, pp. 2315-2320, 1992.
[13] H. Matsuura, and H. Okushi, “Schottky Barrier Junctions of Hydrogenated Amorphous Silicon-Germanium Alloys,” J. Appl. Phys., Vol. 62, No. 7, pp. 2871-2879, 1987.
[14] V. Smid, J. J. Mares, L. Stourach, and J. Kristofik, “Amorphous-Crystalline Heterojunctions,” in Tetrahedrally-Bonded Amorphous Semiconductors, D. Adler and H. Fritzsche, eds., Plenum Press, New York, pp. 483-500, 1985.
[15] L. H. Laih, T. C. Chang, Y. A. Chen, W. C. Tsay, and J. W. Hong, “A U-Grooved Metal-Semiconductor-Metal Photodetector (UMSM-PD) with an i-a-Si:H Overlayer on a [100] p-Type Si Wafer,” IEEE Photo. Technol. Lett., Vol. 10, No. 4, pp. 579-581, 1998.
[16] J. Y. L. Ho, and K. S. Wong, “Bandwidth Enhancement in Silicon Metal-Semiconductor-Metal Photodetector by Trench Formation,” IEEE Photo. Technol. Lett., Vol. 8, No. 8, pp. 1064-1066, 1996.
[17] S. M. Sze, D. J. Coleman, Jr. and A. Loya, “Current Transport in Metal-Semiconductor-Metal (MSM) Structure,” Solid-State Electron., Vol. 14, pp. 1209-1218, 1971.
[18] H. H. Wehmann, G. P. Tang, R. Klockenbrink, and A. Schlachetzki, “Dark-Current Analysis of InGaAs-MSM-Photodetectors on Silicon Substrates,” IEEE Trans. Electron Devices, Vol. 43, No. 9, pp. 1505-1509, 1996.
[19] M. Y. Liu, and S. Y. Chou, “Internal Emission Metal-Semicondutor-Metal Photodetectors on Si and GaAs for 1.3 μm Detection,” Appl. Phys. Lett., Vol. 66, No. 20, pp. 2673-2675, 1995.
[20] W. A. Wohlmuth, P. Fay, and I. Adesida, “Dark Current Suppression in GaAs Metal-Semiconductor-Metal Photodetectors, ” IEEE Photo. Technol. Lett., Vol. 8, No. 8, pp. 1061-1063, 1996.
[21] J. I. Chyi, T. S. Wei, J. W. Hong, W. Lin, and Y. K. Tu, “Low Dark Current and High Linearity InGaAs MSM Photodetectors,” Electron. Lett., Vol. 30, No. 4, pp. 355-356, 1994.
[22] T. C. Chung, “Optoelectronical Characteristics of Green-Blue-White a-SiN:H-Based p-i-n Thin-Film Light-Emitting Diodes,” Master Thesis, Institute of Electrical Engineering, National Central University, Chungli, Taiwan, Republic of China, 1998.
[23] D. Kruangam, T. Endo, M. Deguchi, W. Guang-Pu, H. Okamoto, and Y. Hamakawa, “Amorphous Silicon-Carbide Thin-Film Light Emitting Diode,” Optoelectron. Devices and Technol., Vol. 1, No. 1, pp. 67-84, 1986.
[24] J. B. Casady, and R. W. Johnson, “Status of Silicon Carbide (SiC) as a Wide-Bandgap Semiconductor for High-Temperature Applications: a Review, ” Solid-State Electron., Vol. 39, No. 10, pp. 1409-1422, 1996.
[25] K. H. Wu, Y. K. Fang, J. J. Ho, W. T. Hsieh, W. H. Chuang, and J. D. Hwang, “A High Optical-Gain β-SiC Bulk-Barrier Phototransistor for High-Temperature Applications, ” IEEE Photo. Technol. Lett., Vol. 10, No. 11, pp. 1611-1613, 1998.
[26] H. Mimura, and Y. Hatanaka, “The Use of Amorphous-Crystalline Silicon Heterojunctions for the Application to an Imaging Device,” J. Appl. Phys., Vol. 61, No. 7, pp. 2575-2580, 1987. |