應用於第五代行動通訊毫米波頻段之 CMOS 單刀雙擲開關與中功率放大器

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姓名

蔡祈安(Chi-An Tsai) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

應用於第五代行動通訊毫米波頻段之 CMOS 單刀雙擲開關與中功率放大器
(CMOS SPDT Switches and Medium Power Amplier for 5G Millimeter-Wave Bands)

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至系統瀏覽論文 (2026-8-10以後開放)

摘要(中)

在本論文中，我們使用 90-nm CMOS 製程設計之非對稱式收發
開關以及中功率放大器，以及使用 0.18-µm CMOS 製程來實現 Ka 頻
段之行進波開關。
在第二章，我們設計一個應用於 Ka 頻段之行進波開關，操作
頻率設計在 26.5 GHz 至 40 GHz。本電路利用行進波的概念實現寬
頻開關，藉由電感性的傳輸線與 o-state 的電晶體來形成一仿真
（artical）傳輸線。量測結果在 26.5 至 40 GHz 的操作頻率範圍，植
入損耗小於 3.17 dB，返回損耗大於 9.1 dB，隔離度大於 28.4 dB。在
35 GHz 下的大訊號量測結果 IP1dB 為 17.5 dBm。
在第三章，我們設計一個應用於 Q 頻段的非對稱式收發開關，操
作頻率範圍為 37 GHz 至 44 GHz。架構主要是由 Π-network 的濾波
器架構來實現。在操作頻率範圍 3744 GHz 內的量測結果，TX mode
的植入損耗小於 1.56 dB，而 RX mode 植入損耗小於 1.5 dB，返回損
耗在 TX mode 皆有大於 11.1 dB，RX mode 皆大於 11.9 dB。隔離度
在 TX mode 跟 RX mode 皆分別大於 24.6 dB 與 16.3 dB。在 40 GHz
下模擬大訊號得到的 IP1dB 為 40.4 dBm。
在第四章提出一個應用於 5G 毫米波之使用中和電容技術之中功
率放大器，操作頻率設計在 37 GHz 至 43.5 GHz。本電路輸入輸出由
變壓器來作單端與差動的轉換，利用挑選中和電容與電路 CG 級的
閘級電容來達到最佳的穩定效果與最大可用增益。量測結果增益大於
10.6 dB、輸入返回損耗大於 8.7 dB、輸出返回損耗大於 2.8 dB，輸
出返回損耗有比較明顯往低頻偏移的趨勢。在 40 GHz 時， OP1dB 及
在 OP1dB 下的 PAE 分別為 12.4 dBm 及 7.9%。

摘要(英)

In this paper, we use the 90-nm CMOS process to design an asymmetric T/R switch and a medium power amplier, we also use the 0.18-m
CMOS process to implement a traveling wave switch for the Ka band.
In the second chapter of this paper, we design a traveling wave
switch for the Ka band with an operating frequency range of 26.5 GHz
to 40 GHz.This circuit utilizes the concept of a traveling wave to achieve
wideband switch.By combining inductive transmission lines and o-state
transistor, an articial transmission line is formed.The measurement
results show that within the operating frequency range of 26.5 to 40
GHz, the insertion loss is less than 3.17 dB, the return loss is greater
than 9.1 dB, and the isolation is greater than 28.4 dB.
In Chapter 3, we design a asymmetric T/R switch operation in the
37 GHz to 44 GHz frequency range. The architecture is primarily based
on a Π-network-lter structure.In the operating frequency range of 37-
44 GHz, the insertion loss of the TX mode is less than 1.56 dB, The
return loss is greater than 11.1 dB in TX mode and greater than 11.9
dB in RX mode.The isolation is greater than 24.6 dB and 16.3 dB in
TX and RX modes, respectively.At 40 GHz, the simulated large-signal
IP1dB is measured to be 40.4 dBm.
In Chapter 4, we propose a medium power amplier using capacitance neutralization technique for the 5G millimeter-wave. The operating frequency range is designed from 37 GHz to 43.5 GHz. The
circuit utilizes transformers to achieve single-ended to dierential conII
version.By selecting neutralization capacitors and circuit CG-stage gate
capacitor, the circuit achieves optimal stable stability and maximum
available gain.The measurement results show a gain greater than 10.6
dB, input return loss greater than 8.7 dB, output return loss greater
than 2.8 dB. The output return loss exhibits a noticeable trend towards
lower frequencies. At 40 GHz, the PAE of OP1dB and OP1dB are 12.4
dBm and 7.9%.

關鍵字(中)

★ 功率放大器
★ 毫米波
★ 收發開關
★ 行進波開關

關鍵字(英)

★ Power Amplifier
★ Millimeter Wave
★ T/R Switch
★ Traveling Wave Switch

論文目次

頁次
摘要. . . . II
Abstract . . . . III
目錄 . . . . V
圖目錄 . . . . VII
表目錄 . . . . XI
第一章緒論 . . . . 1
1.1 研究動機與背景 . . . . 1
1.2 毫米波開關文獻回顧 . . . . 3
1.3 論文架構 . . . . 4
第二章 Ka 頻段行波單刀雙擲開關. . . . 5
2.1 簡介 . . . . 5
2.2 電晶體模型 . . . . 6
2.3 基體浮接技術 . . . . 7
2.4 電路模擬與量測. . . . 8
2.4.1 電路設計. . . . . 8
2.4.2 模擬結果 . . . 15
2.4.3 量測結果 . . . . 20
2.5 結果與討論 . . . . 24
第三章 Q 頻段非對稱式收發開關 . . . . 27
3.1 簡介. . . . 27
3.2 收發開關介紹 . . . . 28
3.2.1 收發開關類型 . . . . 28
3.2.2 對稱式開關與非對稱式開關. . . . 29
3.3 電路模擬與量測. . . . 30
3.3.1 電路設計. . . . . 30
3.3.2 模擬結果. . . . 33
3.3.3 量測結果. . . . . 39
3.3.4 電路偵錯與重新模擬 . . . . 45
3.4 結果與討論 . . . . 50
第四章應用於 5G 毫米波 n259/n260 頻段之中功率放大器 . 53
4.1 簡介 . . . . 53
V
4.2 電路模擬與量測 . . . 54
4.2.1 電路設計 . . . . 54
4.2.2 模擬結果 . . . 67
4.2.3 量測結果 . . . . 72
4.2.4 電路偵錯與重新模擬. . . . 76
4.3 結果與討論. . . . 78
第五章結論 . . . . 79
參考文獻. . . . 81

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指導教授

傅家相(Jia-Shiang Fu)

審核日期

2023-8-14

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