CMOS MEMS電容式磁感測器設計與應用

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姓名

楊鈺琳(Yu-Lin Yang) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

CMOS MEMS電容式磁感測器設計與應用
(DESIGN AND APPLICATION OF CMOS MEMS CAPACITIVE MAGNETIC SENSOR)

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至系統瀏覽論文 ( 永不開放)

摘要(中)

此研究為三軸電容式磁力計之設計，採用 UMC 0.18 um CMOS 製程完成機械結構與讀取電路，藉由 MEMS 後製程產生懸浮結構，經由勞倫茲力和電磁力作用於晶片上產生結構位移，使其感測電容發生變化。勞倫茲力作動下 X、Y、Z 三軸靈敏度為 0.13 V/T、0.16 V/T 及 11.52 V/T，在電磁力作用下，Z 軸靈敏度為 0.01 V/T，而最小量測磁場為40 uT。
本設計在感測器上方加入導磁材料使出平面感測磁場增加，勞倫茲力也隨之增強，最終Z軸靈敏度增加約60%。
此感測器能當作電流感測器，通過導線周圍產生的磁場來判斷電流大小，以及利用勞倫茲力中磁場與電流角度關係進行關節角度量測，並期許後續開發更多應用。

摘要(英)

This research is the design of a three-axis capacitive magnetometer, UMC 0.18 um CMOS process is used to complete the mechanical structure and readoutcircuits, and suspended structure was created by post-MEMS process. Structural displacement occurs on the chip through Lorentz force and electromagnetic force, which changes the sensing capacitance. Under the Lorentz force motion, the sensitivity of X, Y, and Z axis is 0.13 V/T, 0.16 V/T and 11.52 V/T. Under the electromagnetic force motion, the sensitivity of Z axis is 0.01 V/T, and the minimum measurement magnetic field is 40 uT.
This sensor can be used as a current sensor to measure the magnitude of the current through the magnetic field generated around the wire, and measure the joint angle through the relationship between the magnetic field and the current angle in the Lorentz force, and expect to develop more applications in the future.

關鍵字(中)

★ CMOS MEMS
★ 磁感測器
★ 勞倫茲力
★ 磁力計應用

關鍵字(英)

★ CMOS MEMS
★ magnetometer
★ Lorentz force
★ magnetometer applications

論文目次

目錄
摘要 I
ABSTRACT II
誌謝 III
目錄 IV
圖目錄 VII
表目錄 XII
第一章緒論 1
1.1 前言 1
1.2 研究動機與目的 1
1.3 磁感測器 2
1.4 文獻回顧 4
表1.1 各磁力感測器優缺點比較表 9
1.5 論文架構 10
第二章工作原理與感測介紹 11
2.1 安培定律 11
2.2 勞倫茲力 12
2.3 振動模型 12
2.4 感測架構 16
第三章元件設計結構與模擬 20
3.1 元件結構設計 20
3.2 模擬分析與結果 25
表3.1 元件共振頻率 28
表3.2 元件整體質量與各模態有效質量 28
第四章結構製作流程與後製程 30
4.1 CMOS製程概述 30
4.2 MEMS後製程概述 31
4.3 PCB板製作 34
第五章量測分析討論與應用環境 35
5.1測量環境 35
5.2微結構靜態量測 36
5.3動態輸出訊號量測 42
5.4最低量測磁場與討論 55
5.5加入導磁材料影響 56
5.6應用結果 57
第六章結論與討論 60
表6.1 勞倫茲力磁感測器比較表 61
參考文獻 62

參考文獻

參考文獻
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[2] J. Lee, Y. Oh, S. Oh, H. Chae. “Low Power CMOS-Based Hall Sensor with Simple Structure Using Double-Sampling Delta-Sigma ADC,” Sensors 2020, 20(18),5285.
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指導教授

陳世叡(Shih-Jui Chen)

審核日期

2023-7-13

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