以矽奈米線場效電晶體量測半導體製程所使用之化學品中超低濃度金屬離子之研究

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姓名

陳奕宏(Yi-Hung Chen) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

以矽奈米線場效電晶體量測半導體製程所使用之化學品中超低濃度金屬離子之研究
(Measurements of Ultra-Low Concentration of Metal Ions in Solvents Used in Semiconductor Manufacturing by Silicon Nanowire Field Effect Transistors)

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摘要(中)

隨著半導體技術的進步，對製程中所使用的化學品和有機溶劑中的金屬離子濃度的要求也日益增加，在業界大部分都是使用感應耦合電漿質譜儀(ICP-MS)來進行定性和定量分析。然而ICP-MS的檢測極限已無法滿足現今電子級化學品中超低金屬離子濃度的要求，且ICP-MS的高量測成本以及漫長的量測時間大幅增加了晶片的生產成本，因此，尋找ICP-MS的替代方案對於半導體製造商來說變得至關重要。本研究目的在於採用矽奈米線場效電晶體(SiNW-FET)作為檢測元件，開發了一種具有成本效益且快速檢測半導體晶片製程中使用的化學品中超低金屬離子濃度的方法。

摘要(英)

As semiconductor technology advances, the stringent requirements for the concentration of metal ions in the chemicals and organic solvents used in the manufacturing process have increased. The industry predominantly relies on Inductively Coupled Plasma Mass Spectrometry (ICP-MS) for qualitative and quantitative analysis. However, the detection limits of ICP-MS can no longer meet the ultra-low metal ion concentration requirements in modern electronic-grade chemicals. Additionally, the high measurement costs and lengthy measurement times of ICP-MS significantly increase the production costs of chips. Therefore, finding an alternative to ICP-MS has become crucial for semiconductor manufacturers. This study aims to develop a cost-effective and rapid method for detecting ultra-low metal ion concentrations in the chemicals used in semiconductor wafer processing by employing Silicon Nanowire Field-Effect Transistors (SiNW-FET) as the detection element.

關鍵字(中)

★ 金屬離子
★ 場效電晶體

關鍵字(英)

論文目次

摘要 I
Abstract II
致謝 III
目錄 V
圖目錄 VIII
表目錄 XII
第一章緒論 1
第二章文獻回顧 3
2.1 重金屬離子 3
2.1.1 重金屬離子概論 3
2.1.2 重金屬離子對半導體製程所產生之影響 4
2.1.3 重金屬離子感測器 8
2.2 場效電晶體 9
2.2.1 場效電晶體介紹 9
2.2.2 閘極電壓施加方式 11
2.2.3 矽基場效電晶體於金屬離子感測器之應用 13
2.3 晶片表面改質 25
2.3.1 自組裝單層膜 25
2.3.2 聚乙二醇 28
第三章實驗藥品、儀器與方法 29
3.1 實驗架構 29
3.2 實驗藥品 31
3.3 儀器設備 32
3.4 實驗步驟 33
3.4.1 晶片表面清洗 33
3.4.2 晶片表面改質 34
3.4.3 強酸鹼化學品前處理 34
3.4.4 SiNW-FET電訊號量測及數據分析方法 35
3.4.5 EGFET電訊號量測及數據分析方法 37
第四章結果與討論 38
4.1 檢量線建立 38
4.1.1 純水中金屬離子檢測 38
4.1.2 有機溶劑中金屬離子檢測 43
4.1.3 強酸鹼化學品中金屬離子檢測 47
4.2 實際樣品檢測結果 52
4.3 以不同施加閘極方式之FET量測結果比較 57
4.3.1 Bottom Gate與Liquid Gate量測結果比較 57
4.3.2 Extended Gate與Liquid Gate量測結果比較 60
第五章結論 64
第六章未來展望 66
第七章參考文獻 68

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指導教授

陳文逸(Wen-Yih Chen)

審核日期

2024-7-2

推文