低溫電漿輔助原子層沉積法鍍製抗反射膜之低應力研究

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姓名

柯冠宇(Kuan-Yu Ko) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

低溫電漿輔助原子層沉積法鍍製抗反射膜之低應力研究
(Investigation of Low Stress in Anti-Reflective Coatings Fabricated by Low-Temperature Plasma-Enhanced Atomic Layer Deposition)

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至系統瀏覽論文 (2026-7-10以後開放)

摘要(中)

本論文使用電漿輔助原子層沉積法鍍製抗反射膜於玻璃基板，固定製程溫度於70°C，使用氧氣混合氬氣的氧化方式，探討不同厚度、不同電漿瓦數下TiO2、SiO2的光學特性與機械應力，並以無膜裂之最佳參數電漿功率150W鍍製抗反射膜。
經X光繞射儀測得TiO2單層膜與基板訊號一致、TEM橫截面與電子繞射環無任何晶粒與光斑產生，呈現非晶態。使用原子力顯微鏡分析薄膜表面，其平均粗糙度約為0.2±0.05nm。應力量測使用Fizeau 干涉儀，TiO2單層膜隨著循環次數增加穩定於約220±10MPa，而SiO2單層膜隨著循環次數增加穩定於約-35±15MPa。
最終結果顯示，四層抗反射膜在400nm~700nm可見光波段的反射光譜平均反射率達0.35%，應力值為48MPa，驗證了使用呈現張應力的TiO2與呈現壓應力的SiO2可達到抵消應力的效果。

摘要(英)

In this work, a plasma assisted atomic layer deposition method was utilized
to deposit an anti-reflective coating on glass substrates at a fixed process
temperature of 70°C, using an oxygen/argon gas mixture for oxidation. Optical
properties and mechanical stress of different thicknesses TiO2 and SiO2 at various
plasma power levels were investigated. The anti-reflective coating was deposited
using the optimal plasma power of 150W, which did not result in film cracking.
XRD measurements showed that the TiO2 single-layer film signal was
consistent with the substrate signal, and TEM cross section along with an electron
diffraction ring confirmed amorphous state without grains or spots. AFM analysis
of the film surface revealed an average roughness of about 0.2±0.05nm. Stress
measurements using a Fizeau interferometer demonstrated that the TiO2 film
stabilized at about 220±10MPa with increasing cycles, while the SiO2 film
stabilized at about -35±15MPa.
The results indicated that the four-layer anti-reflective coating provided an
average reflectance of 0.35% over a visible light spectrum from 400nm to 700nm.
The stress value of 48MPa verified that using TiO2 with tensile stress and SiO2
with compressive stress can effectively cancel out stress.

關鍵字(中)

★ 原子層沉積法
★ 應力
★ 抗反射膜

關鍵字(英)

★ ALD
★ stress
★ AR coating

論文目次

中文摘要 i
ABSTRACT ii
致謝 iii
目錄 v
圖目錄 vii
表目錄 xi
第一章緒論 1
1-1 前言 1
1-2 研究目的與動機 4
第二章基礎理論與文獻回顧 5
2-1 原子層沉積工作原理 5
2-1-1 化學氣相沉積法 5
2-1-2 原子層沉積法 7
2-1-3 電漿輔助原子層沉積法(PEALD) 11
2-2 薄膜應力 14
2-2-1 薄膜應力成因 14
2-2-2 薄膜應力計算公式 16
2-3 文獻探討 19
第三章實驗方法與儀器設備 29
3-1 實驗方法 29
3-1-1 實驗流程 29
3-1-2 實驗步驟 30
3-2 製程設備介紹 33
3-3 量測儀器介紹 36
3-3-1 Fizeau干涉儀 36
3-3-2 落地型UV-VIS-NIR分光光譜儀 39
3-3-3 橢圓偏振儀(Spectroscopic Ellipsometer) 40
3-3-4高解析掃描穿透式電子顯微鏡(Transmission Electron Microscope, TEM) 41
3-3-5 原子力顯微鏡(Atomic Force Microscope, AFM) 42
3-3-6 X光繞射儀(X Ray Diffractometer, XRD) 43
3-3-7 X光光電子能譜儀(X-ray Photoelectron Spectrometer, XPS) 44
3-3-8 光學顯微鏡(Optical Microscope, OM) 45
第四章實驗結果與討論 46
4-1 TiO2單層膜之光學特性與機械特性 46
4-1-1 TiO2之光學特性 46
4-1-2 TiO2之機械應力 52
4-2 SiO2單層膜之光學特性與機械特性 58
4-2-1 SiO2之光學特性 58
4-2-2 SiO2之機械應力 63
4-3 多層抗反射膜 67
第五章結論 70
參考文獻 71

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指導教授

郭倩丞(Chien-Cheng Kuo)

審核日期

2024-7-22

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