在矽基上生長sp2鍵結氮化硼薄膜用於沉積二硫化鉬之研究

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姓名

吳俊漢(Chun-Han Wu) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

在矽基上生長sp2鍵結氮化硼薄膜用於沉積二硫化鉬之研究
(Research on the Growth of sp2 Bonded Boron Nitride Films on Silicon Substrates for Molybdenum Disulfide Deposition)

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至系統瀏覽論文 (2027-8-1以後開放)

摘要(中)

在科技日異月新的發展下，sp2-氮化硼薄膜由於無表面懸鍵及寬能隙的特性，因此被看好能扮演良好的介電層材料，希望能與矽結合並合成厚度可控均勻且高品質的sp2-氮化硼薄膜，用以提供二硫化鉬(MoS2)平坦的表面沉積，為本研究的核心主軸。
為了得到均勻的氮化硼薄膜，並改善轉印產生的皺褶、破裂或金屬離子汙染等問題，我們直接在矽(111)和二氧化矽基板上沉積sp2-氮化硼薄膜，並藉由拉曼光譜確認有sp2-氮化硼的E2g峰、TEM確認氮化硼薄膜是水平排列，層與層間距為0.34 nm和0.33 nm及XPS能譜圖確認硼氮元素比為1.12:1和0.99:1，證實我們成功合成sp2-氮化硼薄膜，此外我們也透過調變載氣流量和沉積時間優化薄膜表面粗糙度供後續MoS2沉積。
最後在sp2-氮化硼薄膜上沉積二硫化鉬(MoS2)，於MoS2 / sp2-BN / Si(111)結構，用拉曼光譜確認有MoS2的E2g及A1g峰，但基板表面有孔洞無PL光譜訊號，表示MoS2不是好的二維材料。於MoS2 / sp2-BN / SiO2結構，用拉曼光譜確認有MoS2的E2g及A1g峰，PL光譜半高寬為0.12 eV及TEM圖證明MoS2二維材料可以沉積在sp2-氮化硼的薄膜上，說明在二氧化矽基板上的sp2-氮化硼薄膜適合用來沉積MoS2的基板。

摘要(英)

With the advancement of technology, sp2-boron nitride (BN) film has been highly regarded as promising dielectric layer material due to the properties of no dangling bonds and wide bandgap. How to fabricate sp2-BN film on Si substrate with controllable thickness, uniformity, high quality, and flat surface is the core focus of this study.
To achieve uniform boron nitride film and prevent wrinkles, fractures, and metal ion contamination during the film transfer, the sp2-BN films were deposited onto Si (111) and SiO2 substrates directly. Raman spectroscopy confirmed the presence of the E2g peak of sp2-BN, TEM images showed horizontal alignment and the interlayer spacing is 0.34 nm and 0.33 nm, and XPS spectra confirmed a B:N ratio is 1.12:1 and 0.99:1, proving the successful synthesis of sp2-BN films. Additionally, we optimized the film surface roughness for MoS2 deposition by adjusting the carrier gas flow and deposition time.
Finally, MoS2 was deposited on the sp2-BN films. For MoS2 / sp2-BN / Si(111) layer structure, Raman spectroscopy confirmed the E2g and A1g peaks of MoS2. Many holes appeared on the surface of the substrate and there was no PL signal for the MoS2 film. It shows the MoS2 is not a good 2-D material. For MoS2 / sp2-BN / SiO2 layer structure, Raman spectroscopy confirmed the E2g and A1g peaks of MoS2. The PL spectrum had a FWHM of 0.12 eV, and TEM images confirmed the 2D material. MoS2 has been deposited on the sp2-BN film. It shows that sp2-BN film on SiO2 substrate is one of the suitable substrates for MoS2 deposition.

關鍵字(中)

★ sp2-氮化硼薄膜
★ 二硫化鉬

關鍵字(英)

★ sp2-boron nitride film
★ Molybdenum Disulfide

論文目次

摘要 I
Abstract II
致謝 III
圖目錄 VII
表目錄 XI
第1章、研究背景 1
1-1 研究背景 1
1-1-1 半導體元件發展 1
1-1-2 二維材料 2
1-2 氮化硼之分類 4
1-2-1 sp2 -鍵結之氮化硼 5
1-2-2 sp3 -鍵結之氮化硼 7
1-3 氮化硼之特性 8
1-4 研究動機 10
第2章、文獻探討 12
2-1 沉積sp2-氮化硼薄膜之方式 12
2-1-1 機械剝離法 12
2-1-2 液相剝離法 12
2-1-3 物理氣相沉積法 13
2-1-4 離子束濺鍍法 14
2-1-5 分子束磊晶 15
2-1-6 化學氣相沉積法 17
2-2 以CVD沉積sp2-氮化硼薄膜之特性 18
2-2-1 前驅物 18
2-2-2 過渡金屬基板 19
2-2-3 矽等非金屬基板 21
第3章、研究方式 23
3-1 實驗方式 23
3-1-1 基板選用 23
3-1-2 基板清潔 23
3-1-3 轉印法製備sp2-氮化硼 24
3-1-4 直接沉積法製備sp2-氮化硼 25
3-1-5 MoS2的製備方式 26
3-2 分析儀器 26
3-2-1 拉曼光譜儀 (Raman Spectrometer) 26
3-2-2 原子力顯微鏡 (AFM) 28
3-2-3 高解析雙束型聚焦離子束系統 (High-Resolution Dual-Beam Focus-Ion-Beam System , FIB) 29
3-2-4 穿透式電子顯微鏡 (Transmission Electron Microscope , TEM) 31
3-2-5 X射線光電子能譜儀 (XPS) 32
第4章、結果與討論 33
4-1 轉印sp2-氮化硼薄膜在二氧化矽基板上 33
4-2 探討sp2-氮化硼於爐管中不同位置及生長時間之沉積結果 37
4-2-1 探討sp2-氮化硼於爐管不同位置之沉積結果 37
4-2-2 探討六方氮化硼不同生長時間之沉積結果 40
4-3 矽(111)基板上生長sp2-氮化硼薄膜 42
4-3-1 不同沉積溫度之結果 42
4-3-2 調變載氣流量 44
4-3-3 調變沉積時間 46
4-3-4 對矽(111)基板進行氧電漿前處理 48
4-4 直接於二氧化矽基板上生長sp2-氮化硼薄膜 53
4-4-1 不同沉積溫度之結果 53
4-4-2 調變載氣流量 56
4-4-3 調變沉積時間 57
4-5 在sp2-氮化硼薄膜上沉積二硫化鉬 60
4-5-1 轉印sp2-氮化硼薄膜在二氧化矽基板上再沉積二硫化鉬 60
4-5-2 矽(111)基板上生長sp2-氮化硼薄膜再沉積二硫化鉬 62
4-5-3 二氧化矽基板上生長sp2-氮化硼薄膜再沉積二硫化鉬 64
第5章、總結 71
5-1 結論 71
5-2 未來展望 72
參考資料 73

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2024-7-27

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