高能脈衝磁控濺鍍緩衝層對矽基氮化鎵磊晶表面形貌及極性研究

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姓名

林雅晴(Ya-Ching Lin) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

高能脈衝磁控濺鍍緩衝層對矽基氮化鎵磊晶表面形貌及極性研究
(Study on the Surface Morphology and Polarity of GaN Epitaxy on Silicon Substrates with HiPIMS Buffer Layer)

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至系統瀏覽論文 (2027-8-31以後開放)

摘要(中)

目前氮化鎵磊晶薄膜在矽基板的製程方式為以有機金屬氣相沉積(Metal-organic Chemical Vapor Deposition, MOCVD)生長單層或多層且很厚的氮化鋁薄膜於基板上作為緩衝層，本研究利用高功率脈衝磁控濺鍍(High Power Impulse Magnetron Sputtering，HiPIMS)的製程方式沉積100nm氮化鎵緩衝層在矽基板上，透過高能量且高電漿密度的方式生長氮化鎵緩衝層，再利用MOCVD沉積氮化鎵磊晶層，以氮化鎵緩衝層以改善晶格不匹配的問題。
　　在研究過程中，固定MOCVD磊晶層製程溫度為1095°C、壓力200mbar，以調整緩衝層參數為主，探討緩衝層的溫度、厚度、充放能時間對磊晶層的影響，也探討了氮電漿前處理能初步改善基板回蝕的問題，以及調整緩衝層氮氣氬氣比與磊晶層五三比；量測部分是使用由X射線繞射儀(X-ray Diffractometer，XRD)分析其結晶繞射(FWHM)與強度來判斷緩衝層及磊晶層晶格排列一致性與結晶品質，使用原子力顯微鏡(Atomic Force Microscopy ，AFM)分析粗糙度，並透過掃描式電子顯微鏡(Scanning Electron Microscopy，SEM)分析薄膜表面與側面結構，最後使用氫氧化鉀(KOH)蝕刻表面再使用表面輪廓儀(Alpha-Step)來做初步判斷極性。
　　最後可以發現加了氮化鎵緩衝層後可以讓MOCVD磊晶層從約10 μm的氮化鎵非連續膜晶粒改善成約2μm的氮化鎵連續膜。對矽基板做表面氮電漿前處理之後再鍍氮化鎵緩衝層，由SEM分析出，有氮電漿前處理之磊晶層由許多三角錐狀的晶柱變為六方晶柱，幫助氮化鎵生長磊晶層時更能有橫向生長的能力，XRD觀察到優化後的氮化鎵磊晶層半高寬從0.24 degree改善到0.18 degree，也從SEM觀察出表面形貌變得較連續；從KOH蝕刻後觀察SEM的表面形貌及蝕刻階高可以發現有氮極性的現象，因此未來必須再繼續解決表面平整之問題，進而提升氮化鎵直接磊晶在矽基板上的品質。

摘要(英)

Currently, the most common process method for GaN-on-Si epi layer gallium nitride (GaN) is a single-layered or multilayered thick aluminum nitride (AlN) buffer layer grown on Si substrate by using Metal-organic chemical vapor deposition (MOCVD). In this study, we employed high-power impulse magnetron sputtering (HiPIMS) to deposit 100-nm GaN buffer layer on silicon substrates under high energy and high density of plasma. Then, MOCVD has been used to deposit a GaN epitaxial layer. This approach aims to improve lattice mismatch problem.
　　In this research, the MOCVD epitaxial layer was maintained at a process temperature of 1095 °C and a pressure of 200 mbar. The primary focus was adjusting the buffer layer parameters, including process temperature, buffer-layer thickness, and discharge time of HiPIMS, to explore their effects on the epitaxial layer. Additionally, we investigated the improvement of substrate back-etching through nitrogen plasma pretreatment, as well as adjusting the Nitrogen-Argon ratio during the buffer layer process and the V/III ratio during the epitaxial layer process. For measurements, we utilized X-ray diffractometer (XRD) to analyze the Full Width at Half Maximum (FWHM) and intensity of the crystal diffraction, assessing the consistency of lattice alignment and the crystalline quality of the buffer and epitaxial layers. Atomic Force Microscopy (AFM) was employed to determine the surface roughness. Scanning Electron Microscopy (SEM) was used to examine the surface and cross-sectional structures of the films. Finally, Alpha-Step was used to determine polarity assessment after KOH etching.
　　The results revealed that incorporating the GaN buffer layer significantly improved the MOCVD-grown epitaxial layer, transforming it from approximately 10 μm GaN discontinuous film grains to a continuous film of about 2 μm. Before the GaN buffer layer process, a nitrogen plasma pretreatment on the silicon substrate was performed. It shows that the process with the nitrogen plasma pretreatment transformed the epitaxial layer from numerous triangular crystal columns to hexagonal crystal columns, enhancing the lateral growth of the GaN epitaxial layer. XRD results showed an improvement in the FWHM of the optimized GaN epitaxial layer from 0.24 degree to 0.18 degree. SEM analysis also confirmed the improved surface morphology. After KOH etching, SEM examination revealed a nitrogen polarity phenomenon. Consequently, the surface smoothness of the film has to be improved to further enhance the quality of direct GaN epitaxy on silicon substrates.

關鍵字(中)

★ 氮化鎵
★ 緩衝層
★ 高功率脈衝磁控濺鍍
★ 有機金屬氣相沉積

關鍵字(英)

★ GaN
★ buffer layer
★ HiPIMS
★ MOCVD

論文目次

摘要 i
Abstract iii
致謝 v
目錄 vii
圖目錄 x
表目錄 xiv
第一章緒論 1
1-1前言 1
1-2文獻回顧 3
1-3研究動機 4
第二章基礎理論 6
2-1氮化鎵的基本性質 6
2-2氮化鎵之緩衝層介紹 7
2-2-1氮化鎵緩衝層介紹 7
2-2-2氮化鎵緩衝層比較 8
2-3應力與差排現象 8
2-4磁控濺鍍原理介紹 10
2-5高功率脈衝磁控濺鍍原理介紹 11
2-6有機金屬化學氣相沉積原理介紹 12
第三章實驗架構與設備及量測儀器介紹 14
3-1製程設備介紹 14
3-1-1多腔式真空濺鍍系統 14
3-1-2 高功率脈衝磁控濺鍍系統 15
3-2 緩衝層與磊晶層製作流程 17
3-2-1實驗流程圖 17
3-2-2氮化鎵緩衝層與磊晶層製作流程 17
3-3 量測儀器介紹 19
3-3-1 X-ray繞射儀 (X-ray diffractometer, XRD) 19
3-3-2 掃描式電子顯微鏡 (Scanning Electron Microscope, SEM) 21
3-3-3 原子力顯微鏡(Atomic Force Microscope, AFM) 22
3-3-4 穿透式電子顯微鏡(Transmission electron microscope, TEM) 23
3-3-5 表面輪廓儀 (Alpha-Step) 24
第四章實驗結果 25
4-1　緩衝層不同沉積方式之分析 25
4-2　改變緩衝層厚度對於氮化鎵磊晶層之分析 27
4-3　不同緩衝層製程溫度對於氮化鎵磊晶層之分析 31
4-4　探討氮電漿前處理 35
4-4-1 氮電漿前處理對於氮化鎵磊晶層之影響 35
4-4-2 調控氮電漿前處理時間 39
4-4-3 基板氮電漿前處理後改變緩衝層厚度之分析 42
4-5　HIPIMS充放能時間對於氮化鎵磊晶層之分析 45
4-5-1 改變放能時間 45
4-5-2 改變佔空比 48
4-6　緩衝層製程氮氣比例與氮化鎵磊晶層五三比之分析 52
4-6-1 調整緩衝層製程氮氣比例 52
4-6-2 調整磊晶層五三比 55
4-7 氮化鎵極性分析 58
第五章結論與未來研究 64
5-1 結論 64
5-2 未來研究 65
參考文獻 66

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2024-8-8

推文