| 摘要(英) |
Porous silicon structures are fabricated by electrochemical etching of silicon crystals. During the etching process, nanoscale silicon grains emerge, inducing the quantum confinement effect. This effect leads to significant alterations in the optical properties of silicon. In this work, we will investigate the photoluminescence and Raman scattering spectra of porous silicon structures at different etching depths. Additionally, we will attempt to provide more analysis of the spectral results.
In the Raman spectra, there are discernible differences between silicon crystals and porous silicon. The Raman signal of porous silicon exhibits shifts, asymmetry, and broadening of full-width at half-maximum (FWHM), which may also arise from the influence of quantum confinement effect. In our paper, we employ a 3D phonon confinement model to fit the size of silicon nano-crystals in porous silicon based on our experimental results of the Raman signal. Photoluminescence spectra can also be utilized to determine the size of silicon nano-crystals. In this work, we select seven different positions on the same sample and conduct spectral measurements at various etching depths at each position. Through spectral results, we can further determine the etching depth of the porous silicon. Additionally, we can obtain the spectral results of porous silicon at different etching depths and use these results to determine the size and crystalline quality of silicon nanocrystals. Three samples of porous silicon were fabricated using different etching current limits, and based on the spectral results, we assess the influence of etching current magnitude on the optical properties of porous silicon. |
| 參考文獻 |
參考文獻
[1] J.A. Uhlir, "Electrolytic shaping of germanium and silicon", Bell System Technical Journal. 35, 333 (1956)
[2] D.R. Turner, "On the mechanism of chemically etching germanium and silicon", Journal of the electrochemical Society. 107, 810 (1960)
[3] L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Applied physics letters. 57, 1046 (1990)
[4] H.D. Fuchs, "Porous silicon and siloxene: Vibrational and structural properties", Physical Review B. 48, 8172 (1993)
[5] A.G. Cullis, L.T. Canham, and P.D.J. Calcott, "The structural and luminescence properties of porous silicon", Journal of applied physics. 82, 909 (1997)
[6] Misra. Prasanta. "Normal modes of a one-dimensional chain with a basis", Physics of condensed matter. Academic Press, 44 (2011)
[7] Sunada. Toshikazu, "Lecture on topological crystallography", Japanese Journal of Mathematics. 7, 1 (2012)
[8] F.H. Pollak, and T. Raphael, "Raman characterization of semiconductors revisited", Spectroscopic Characterization Techniques for Semiconductor Technology I. Vol. 452. SPIE (1984)
[9] Y.K. Park, and Suk-Ki Min, "First-Principles Calculation of the Phonon Dispersion Curves of Silicon", Journal of the Korean Physical Society. 31, 267 (1997)
[10] Jia-Chuan Lin , Kuo- Min Huang, "Microstructure Analysis and Photoelectronic Properties of Porous Silicon", Hua Kang Journal of Engineering Chinese Culture University vol.21, 137 (2007)
[11] V. Lehmann, "Electrochemistry of silicon: instrumentation, science, materials and applications" (2002)
[12] R.W. Fathauer, "Visible luminescence from silicon wafers subjected to stain etches", Applied Physics Letters. 60, 995 (1992)
[13] Z.Y. Xu, M. Gal, and M. Gross. "Photoluminescence studies on porous silicon", Applied physics letters. 60, 1375 (1992)
[14] Kanemitsu. Yoshihiko, "Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites", Physical review B. 48, 2827 (1993)
[15] Takagahara. Toshihide, and Kyozaburo Takeda, "Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials", Physical Review B. 46, 15578 (1992)
[16] L. Canham, "Introductory lecture: origins and applications of efficient visible photoluminescence from silicon-based nanostructures", Faraday Discussions. 222, 10 (2020)
[17] Y. Yu, "Size-dependent photoluminescence efficiency of silicon nanocrystal quantum dots", The Journal of Physical Chemistry C. 121, 23240 (2017)
[18] R. Tsu, H. Shen, and M. Dutta. "Correlation of Raman and photoluminescence spectra of porous silicon", Applied physics letters. 60, 112 (1992)
[19] M.V. Wolkin, "Electronic states and luminescence in porous silicon quantum dots: the role of oxygen", Physical review letters. 82, 197 (1999)
[20] Wei. Wensheng, and Xunlei Yan. "Dependence of solar cell performance on Si: H nanostructure", Applied Physics A. 97, 895 (2009)
[21] Li. Bibo, Dapeng Yu, and Shu-Lin Zhang. "Raman spectral study of silicon nanowires", Physical Review B. 59, 1645 (1999)
[22] H. Richter, Z. P. Wang, and L. Ley. "The one phonon Raman spectrum in microcrystalline silicon", Solid State Communications. 39, 625 (1981)
[23] I.H. Campbell, and Ph M. Fauchet. "The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors", Solid State Communications. 58, 739 (1986)
[24] Y. Duan, J.F. Kong, and W.Z. Shen. "Raman investigation of silicon nanocrystals: quantum confinement and laser‐induced thermal effects", Journal of Raman Spectroscopy. 43, 756 (2012)
[25] F. Ureña, O,H, Sarah, and R. Jean-Pierre, "Raman measurements of uniaxial strain in silicon nanostructures", Journal of Applied Physics. 114 (2013)
[26] J. Munguía, "Strain dependence of indirect band gap for strained silicon on insulator wafers", Applied Physics Letters. 93(2008) |
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