電極公轉繞圓電化學放電切割加工石英晶圓之研究

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姓名

蔡侑倫(Yu-Lun Tsai) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

電極公轉繞圓電化學放電切割加工石英晶圓之研究
(Research on quartz wafer cutting by using Electrochemical Discharge Machining with circumferentially arranged electrodes revolution)

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摘要(中)

目前常被用於切割石英晶圓的加工方式主要有傳統機械加工及半導體微影製程，而於傳統機械加工中，容易於石英晶圓邊緣處產生微裂紋，若採用半導體微影製程進行加工，其加工過程費時且成本昂貴，且會對環境造成汙染之風險。本研究採用直徑為150 m的碳化鎢螺旋電極作為工具電極，進行電極公轉繞圓電化學放電切割加工石英晶圓之研究，實驗以單因子參數實驗進行，探討各項加工參數如工作電壓、脈衝週期、Z軸進給速率及衝擊係數等對於石英晶圓之各種加工品質特性的影響，加工品質特性包含了槽寬、槽深、槽道表面形貌及螺旋工具電極表面形貌。此外，於各項單因子參數實驗後，會選用較為可行之參數，進行石英晶圓直徑8 mm之整圓切穿測試，以獲得較佳加工參數組合。
採用電極公轉繞圓的方式，以電化學放電切割加工石英晶圓，不僅能避免長時間於同一點的火花放電，而且能透過公轉繞圓的方式，使新鮮的電解液能夠流動至加工區域，因此所切割完成之石英晶圓側壁較為平滑及未有裂紋生成，而且亦可大幅縮短加工時間，增進加工效率。依據各項參數實驗及整圓切穿測試結果，可得到本研究較適合切割石英晶圓之最佳參數組合為工作電壓48 V、脈衝週期10 s、Z軸進給速率1/5 m/s及衝擊係數50 %，加工時間相較於電極自轉CNC繞圓方式切割加工時間減少了83 %。

摘要(英)

Currently, the common processing methods for cutting quartz wafers mainly include traditional machining and semiconductor lithography. In traditional machining, micro-cracks are likely to occur at the edges of quartz wafers. If the semiconductor lithography is used for processing, the process is time-consuming and expensive, and may pollute the environment. In this study, a tungsten carbide spiral electrode in diameter of 150 µm was used as the tool electrode to study the quartz wafer cutting by using electrochemical discharge machining with circumferentially arranged electrodes revolution. The experiments were conducted in single-factor parameter experiments to discuss the influence of various processing parameters such as voltage, pulse period, Z axis feed rate and duty factor on various processing quality characteristics of quartz wafers. The processing quality characteristics include slot width, slot depth, channel surface morphology and spiral tool electrode surface morphology. In addition, relative feasible parameters were selected after each single-factor parameter experiment to test full-circle cut through with a diameter of 8 mm on the quartz wafer, so as to obtain a better combination of processing parameters.
The circumferentially arranged electrodes revolution is used, and the quartz wafer is cut by using electrochemical discharge, the spark discharge at the same point in a long period of time can be avoided, and the fresh electrolyte can flow to the processing area through the revolution round the circle, so the sidewall of the cut quartz wafer is relatively smooth and free of cracks, and the processing time can be greatly shortened and the processing efficiency can be improved. According to various parameter experiments and full-circle cut through test results, the optimal parameter combination for cutting quartz wafers in this study consists of voltage 48 V, pulse period 10 µs, Z-axis feed rate 1/5 µm/s and duty factor 50 %. The cutting time is reduced by 83% compared with the CNC circle path with electrode rotation.

關鍵字(中)

★ 電化學放電加工
★ 石英晶圓
★ 電極公轉繞圓

關鍵字(英)

★ Electrochemical Discharge
★ Quartz Wafer
★ circumferentially arranged electrodes revolution

論文目次

摘要 i
ABSTRACT ii
誌謝 iv
目錄 v
表目錄 viii
圖目錄 ix
第一章緒論 1
1-1 研究背景 1
1-2 研究動機與目的 2
1-3 文獻回顧 3
1-4 論文架構 9
第二章實驗基礎理論 10
2-1 電化學放電加工的基礎理論[34] 10
2-1-1 電化學放電加工之放電火花產生機制 12
2-1-2 電化學放電加工之材料移除機制 14
2-2 放電加工基礎理論[34] 17
2-2-1 放電加工之材料移除機制[38] 19
第三章實驗設備與材料 22
3-1 實驗方法 22
3-2 實驗設備 26
3-2-1 電化學放電加工設備 26
3-2-2 車床 26
3-2-3 線切割放電加工機 27
3-2-4 去離子水系統 27
3-2-5 電磁加熱攪拌器 29
3-2-6 直流電源供應器 30
3-2-7 直接數位合成函數波訊號產生器 30
3-2-8 金屬氧化物半導體場效電晶體(MOSFET) 31
3-2-9 高精度影像量測儀 31
3-2-10 精密電子水平 32
3-2-11 超音波清洗機 33
3-2-12 示波器 34
3-2-13 電壓探棒 34
3-2-14 電流探棒 34
3-2-15 斜向式顯微鏡 35
3-2-16 掃描式電子顯微鏡 35
3-2-17 自動濺射鍍膜機 36
3-2-18 雷射共軛焦暨白光干涉儀 37
3-3 實驗材料 38
3-3-1 石英晶圓 38
3-3-2 螺旋工具電極 38
3-3-3 輔助電極 40
3-3-4 電解液 41
3-4 實驗流程與方法 42
3-4-1 試片製作 43
3-4-2 電解液製備流程 43
3-4-3 安裝螺旋工具電極 44
3-4-4 實驗架設參數設定 45
3-4-5 實驗結果之量測方式 48
3-4-6 實驗加工完成的螺旋工具電極拍攝 50
第四章結果與討論 51
4-1 電極公轉繞圓與電極自轉CNC繞圓之加工比較 51
4-2 不同參數對電化學放電加工之影響 55
4-2-1 不同工作電壓對電化學放電切槽加工之影響 55
4-2-2 工作電壓整圓切穿測試 64
4-2-3 不同脈衝週期對電化學放電切槽加工之影響 69
4-2-4 脈衝週期切圓測試 79
4-2-5 不同Z軸進給速率對電化學放電切槽加工之影響 81
4-2-6 Z軸進給速率整圓切穿測試 91
4-2-7 不同衝擊係數對電化學放電切槽加工之影響 95
4-2-8 衝擊係數整圓切穿測試 103
第五章結論 106
未來展望 108
參考文獻 109

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指導教授

崔海平(Hai-Ping Tsui)

審核日期

2024-7-26

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