以反應式濺鍍前驅物應用於兩階段式成長二硫化鉬薄膜

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姓名

吳秉諭(Bing-Yu Wu) 查詢紙本館藏

畢業系所

材料科學與工程研究所

論文名稱

以反應式濺鍍前驅物應用於兩階段式成長二硫化鉬薄膜
(Two-Step Growth of Molybdenum Disulfide Thin Films using Reactive Sputtered Precursors)

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摘要(中)

二硫化鉬 (MoS2) 在許多研究中都展現優異的光電性質，被視為下一世代前瞻半導體，然而目前生產高品質且層數控制良好的 MoS2 多層薄膜仍然是一項重大挑戰，使商業價值降低。而兩階段式的成長則可以有效提高良率，透過物理沉積的方式將前驅物鍍在基板上再經過高溫和硫氣體分子反應，獲得層數可控且兼具品質的 MoS2 連續薄膜。
本研究利用 RF 磁控濺鍍系統 (Radio-Frequency Magnetron Sputtering) 進行反應式氧化鉬電漿沉積，將前驅物濺鍍在氧化矽基板上再進行高溫轉化成 MoS2 薄膜，透過調控濺鍍時間控制不同的 MoS2 層數，探討不同製程參數對成長 MoS2 薄膜的影響，其參數包含電漿功率、壓力、載臺溫度、鉬氧比及硫化溫度。利用拉曼光譜 (Raman Spectroscopy) 分析各參數下，發現在最佳條件下，電性量測可得到開關電比為104 ，電子遷移率 0.5 cm2 V?1 s?1 ，照光下的光電流變化量可到 244 %。

摘要(英)

Molybdenum disulfide (MoS?) has demonstrated excellent optoelectronic properties in numerous studies and is considered a promising next-generation semiconductor. However, producing high-quality MoS? multilayer thin films with well-controlled layer numbers remains a significant challenge, which reduces its commercial viability. The two-step growth method can effectively improve yield by physically depositing precursors onto substrates, followed by high-temperature reactions with sulfur gas molecules to obtain continuous MoS? thin films with controllable layer numbers and high quality.
In this study, we utilized a radio-frequency magnetron sputtering system to perform reactive plasma deposition of molybdenum oxide, sputtering the precursor onto silicon oxide substrates, followed by high-temperature conversion into MoS? thin films. By adjusting the sputtering time to control different MoS? layer numbers, we investigated the effects of various process parameters on the growth of MoS? thin films. These parameters include plasma power, pressure, substrate temperature, molybdenum-to-oxygen ratio, and sulfurization temperature. Using Raman spectroscopy to analyze the samples under different conditions, we found that under optimal parameters, electrical measurements yielded an on/off current ratio of 10?, an electron mobility of 0.5?cm2?V?1?s?1, and a photocurrent variation of up to 244% under illumination.

關鍵字(中)

★ 二硫化鉬
★ RF反應式濺鍍
★ 控制層數
★ 兩段式成長

關鍵字(英)

★ ＭoS2
★ radio-frequency reactive sputtering
★ layer-controlled
★ two-step growth

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章緒論 1
1-1研究背景 1
1-2 研究動機 2
第二章文獻回顧及探討 3
2-1 過渡金屬硫族化合物MoS2介紹 3
2-1-1 MoS2結構介紹 3
2-1-2 MoS2製備方法 4
2-1-3 MoS2之光學性質 6
2-2 兩階段式成長 MoS2 薄膜製程與電晶體特性簡介 11
2-2-1金屬與金屬氧化鉬作為前驅物之影響 13
2-2-2兩階段式成長MoS2文獻回顧 15
2-2-3 兩階段成長 MoS2 之電晶體近況發展 20
第三章研究方法 22
3-1 實驗架構 22
3-2 實驗材料與設備 23
3-2 實驗步驟 23
第四章結果與討論 24
4-1 兩階段式製程參數探討 24
4-1-1 電漿功率與氧分壓條件的影響 24
4-1-2 基板溫度對MoS2 薄膜之影響 29
4-1-3 不同硫化溫度對 MoS2 薄膜之影響 31
4-2 MoS2 電晶體之電性分析 34
4-2-1 層數對 MoS2 電晶體之電性影響 34
4-2-2 MoS2 電晶體之光響應 38
第五章結論 41
參考文獻 42

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指導教授

陳一塵(I-Chen Chen)

審核日期

2024-12-3

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