摘要(英) |
As the size of the ingot increases, the issue of uneven wafer surfaces after cutting has become increasingly pronounced. This not only raises the difficulty and cost of subsequent semiconductor processes but also leads to material waste and reduces production efficiency. According to observations from this study, wafer warping is primarily caused by two factors: uneven thermal expansion and wire vibration. Uneven thermal expansion occurs due to inconsistent heating and cooling of different depths of the ingot during the cutting process, resulting in varying degrees of thermal expansion across regions, which in turn causes surface height variations on the wafer. Wire vibration can also induce localized surface irregularities during cutting; however, its overall impact is limited and primarily affects localized morphology. This study posits that uneven thermal expansion is the primary reason for overall surface deformation of the wafer, and thus focuses on investigating the thermal expansion behavior under different cutting conditions and its effects on wafer surface quality.
The research employed a model with a diameter of 300 mm and a length of 180 mm, analyzing the temperature distribution during the cutting process using numerical simulation tools and comparing the simulation results with experimental data. Throughout the simulation, the spray flow rate of the slurry was adjusted to study its impact on temperature at various cutting depths. Ultimately, the study demonstrated that altering the slurry spray flow rate significantly improves the temperature distribution on the ingot surface, thereby mitigating the impact of uneven thermal expansion on wafer warping. Additionally, by incorporating the thermal expansion effects of the lower main wheel and considering the thermodynamic influences throughout the entire system, the accuracy of the simulation results was further enhanced. These findings contribute to understanding and developing strategies to address the warping issues encountered during the wafer cutting process, effectively reducing material waste and lowering production costs. |
參考文獻 |
[1] T. Liedke and M. Kuna, "A macroscopic mechanical model of the wire sawing process," International Journal of Machine Tools and Manufacture, vol. 51, no. 9, pp. 711-720, 2011.
[2] H. J. Moller, "Basic mechanisms and models of multi?wire sawing," Advanced engineering materials, vol. 6, no. 7, pp. 501-513, 2004.
[3] T. Yamada, M. Fukunaga, T. ICHIKAWA, K. FURUNO, K. MAKINO, and A. YOKOYAMA, "Prediction of warping in silicon wafer slicing with wire-saw machine," Theoretical and Applied Mechanics Japan, vol. 51, pp. 251-258, 2002.
[4] S. Bhagavat and I. Kao, "A finite element analysis of temperature variation in silicon wafers during wiresaw slicing," International Journal of Machine Tools and Manufacture, vol. 48, no. 1, pp. 95-106, 2008.
[5] X. Huang, H. Huang, and H. Guo, "Simulation and experimental research on the slicing temperature of the sapphire with diamond wire," International Journal of Computational Methods, vol. 16, no. 04, p. 1843003, 2019.
[6] L. Johnsen, J. E. Olsen, T. Bergstrom, and K. Gastinger, "Heat transfer during multiwire sawing of silicon wafers," 2012.
[7] M. Bhagavat, V. Prasad, and I. Kao, "Elasto-hydrodynamic interaction in the free abrasive wafer slicing using a wiresaw: modeling and finite element analysis," J. Trib., vol. 122, no. 2, pp. 394-404, 2000.
[8] T. L. Bergman, Fundamentals of heat and mass transfer. John Wiley & Sons, 2011. |