參考文獻 |
Chapter 1
[1] K. D. Huber, R. Bauknecht, C. Bergamaschi, M. Bitter, A. Huber, T. Morf, A. Neiger, M. Rohner, I. Schnyder, V. Schwarz, and H. Jäckel, “InP-InGaAs single HBT technology for photoreceiver OEIC’s at 40 Gb/s and beyond,” J. Lightwave Technol., vol. 18, no. 7, pp. 992-1000, Jul. 2000.
[2] O. Qasaimeh, Z. Ma, P. Bhattacharya, and E. T. Croke, “Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays,” J. Lightwave Technol., vol. 18, no.11, pp. 1548-1553, Nov. 2000.
[3] Z. Lao, Member, V. Hurm, W. Bronner, A. H¨ulsmann, T. Jakobus, Member, K. K¨ohler, M. Ludwig, B. Raynor, J. Rosenzweig, M. Schlechtweg, Member, and A. Thiede, “20-Gb/s 14-k??Transimpedance Long-Wavelength MSM-HEMT Photoreceiver OEIC,” IEEE Photon. Technol. Lett., vol. 10, no. 5, pp. 710-712, May 1998.
[4] S. Radovanovic, A. J. Annema, and B. Nauta, “A 3-Gb/s Optical Detector in Standard CMOS for 850-nm Optical Communication,” IEEE J. of Solid-State Circuits, vol. 40, no. 8, pp. 1706-1717, Aug. 2005.
[5] N. R. Das, and M. J. Deen, “On the Performance Analysis and Design of an Integrated Front-End PIN/HBT Photoreceiver,” IEEE J. of Quantum Electronics, vol. 40, no. 1, pp. 78-91, Jan. 2004.
[6] W. Z. Chen, Y. L. Cheng, and D. S. Lin, “A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end,” IEEE J. of Solid-State Circuits, vol. 40, no. 6, pp. 1388-1396, Jun. 2005.
[7] J. Savoj, B. Razavi, “A 10-Gb/s CMOS clock and data recovery circuit with a half-ratelinear phase detector,” IEEE J. of Solid-State Circuits, vol. 36, no. 5, pp. 761-768, Sept. 2000.
[8] C. Hermans, and M. S. J. Steyaert, “A High-Speed 850-nm Optical Receiver Front-End in 0.18-?m CMOS,” IEEE J. of Solid-State Circuits, vol. 41, no. 7, pp. 1606-1614, Jul. 2006.
[9] M. Jutzi, M. Grözing, E. Gaugler, W. Mazioschek, M. Berroth, “2-Gb/s CMOS Optical Integrated Receiver with a Spatially Modulated Photodetector,” IEEE Photon. Technol. Lett., pp. 1268-1270, Jun. 2005.
[10] B. Yang, J. D. Schaub, S. M. Csutak, D. L. Rogers, and J. C. Campbell, “10-Gb/s All-Silicon Optical Receiver,” IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 745-747, May 2003.
[11] S.M. Csutak, S. Dakshina-Murthy and J.C. Campbell, “CMOS-compatible planar silicon waveguide-grating-couplerphotodetectors fabricated on silicon-on-insulator (SOI) substrates,” IEEE J. of Quantum Electronics, vol 38, no. 5, pp. 477-480, May 2002.
[12] S. M. Csutak, J. D. Schaub, W. E. Wu, R. Shimer, and J. C. Campbell, “High-Speed Monolithically Integrated Silicon Photoreceivers Fabricated in 130-nm CMOS Technology,” IEEE J. of Lightwave Technology, vol 20, no. 9, pp. 1724-1729, Sep. 2002.
[13] C. L. Schow, L. Schares, S. J. Koester, G. Dehlinger, R. John and F. E. Doany, “A 15 Gb/s 2.4 V Optical Receiver Using a Ge-on-SOI Photodiode and a CMOS IC,” IEEE Photon. Technol. Lett., vol. 18, no. 19, pp. 1981-1983, Oct. 2006.
Chapter 2
[1] K. Yang, A. L. Gutierrez-Aitken, X. Zhang, G. I. Haddad and P. Bhattacharya, “Design, Modeling, and Characterization of Monolithically Integrated InP-Based (1.55 μm) High-Speed (24 Gb/s) p-i-n/HBT Front-End,” IEEE J. Lightwave Technol., vol. 14, no. 8, pp. 1831-1839, Aug. 1996.
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[8] S. Demiguel, L. Giraudet, L. Joulaud, J. Decobert, F. Blache, V. Coupe, F. Jorge, P. Pagnod-Rossiaux, E. Boucherez, M. Achouche and F. Devaux, “Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes,” IEEE J. Lightwave technol., vol. 20, no. 12, pp. 2004-2014, Dec. 2002.
[9] S. Kawanishi, A. Takada, M. Saruwatari, “Wideband frequency-response measurement of optical receivers using optical heterodyne detection,” IEEE J. of Lightwave technol., vol. 7, no. 1, pp. 92-98, Jan. 1989.
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Chpter 3
[1] B. Jalali, D. A. Humphrey, L. Naval, R. K. Montgomery, A. F. J. Levi, D. Sivco, N. K. Dutta, and A. Y. Cho, “An edge-coupled receiver OEIC using AlInAs/InGaAs HBTs,” in 5th Indium Phosphide and Related Materials Conf., Apr. 19-22, 1993, pp. 281–284.
[2] G. Unterborsch, D. Trommer, A. Umbach, R. Ludwig, and H.G. Bach, “High-power performance of a high-speed photodetector,” Electronics Lett., vol. 34 no.5, pp. 493-494.
[3] S. Demiguel, L. Giraudet, L. Joulaud, J. Decobert, F. Blache, V. Coupe, F. Jorge, P. Pagnod-Rossiaux, E. Boucherez, M. Achouche, and F. Devaux, “Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes,” IEEE J. Lightw. Technol., vol. 20, no. 12, pp. 2004-2014, Dec. 2002.
[4] T. Takeuchi, T. Nakata, K. Makita, and M. Yamaguchi, “High-speed, high-power and high-efficiency photodiodes with evanescently coupled graded-index waveguide,” Electron. Lett., vol. 36, no. 11, pp. 972-973, May 2000.
[5] Y. Miyamoto, M. Yoneyama, Y. Imai, K. Kato and H. Tsunetsugu, “40 Gbit/s optical receiver module using a flip-chip bonding technique for device interconnection,” Electron. Lett., vol. 34, no. 5, pp. 493-494, Mar. 1998.
[6] A. Leven, V. Hurm, W. Bronner, K. Kohler, H. Walcher, R. Kiefer, J. Fieibner, J. Rosenzweig and M. Schleehtweg, “40 GHz broadband optical receiver combining a multimode waveguide photodiode flip-chip mounted on a GaAs-based HEMT distributed amplifier,” IEEE MTT-S Digest., vol. 2, Jun. 2000, pp. 683-685.
[7] W. K. Huang, S. C. Huang, H. W. Chung, Y. M. Hsin, J. W. Shi, Y. C. Kao, and J. M. Kuo, “37-GHz Bandwidth Monolithically Integrated InP HBT/Evanescently Coupled Photodiode,” IEEE Photon. Technol. Lett., vol. 18, no. 12, pp.1323-1325, Jun. 2006.
[8] W. K. Huang, S. C. Huang, H. W. Chung, Y. M. Hsin, J. W. Shi, Y. C. Kao, and J. M. Kuo, “36 GHz Bandwidth Optoelectronic integrated circuit with Flip-Chip Assembled InP HBT/Evanescently Coupled Photodiode,” IET Optoelectronics, vol. 2, no. 1, pp. 6-9, Feb. 2008.
[9] J. Wei, F. Xia, and S. R. Forrest, “A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode,” IEEE Photon. Technol. Lett., vol. 14, no. 11, pp. 1590-1592, Nov. 2002.
[10] K. Hideki, M. Yoshiaki, M. Kenichi, I. Masaharu and O. Keiichi, “The Flip-Chip Bump Interconnection for Millimeter-Wave GaAs MMIC,” IEEE Transactions on Electronics Packaging Manufacturing, Vol. 22, No. 1, pp. 23-28, Jan. 1999.
[11] E. Zakel, J. Gwiasda, J. Kloeser, J. Eldring, G. Engelmann and H. Reichl “Fluxless flip chip assembly on rigid and flexible polymer substrates using the Au-Sn metallurgy,” in 16th Electronics Manufacturing Technology Symposium, pp. 177-184 Sep. 12-14, 1994.
Chapter 4
[1] J. Choi, B. J. Sheu, and O. T. C. Chen, “A monolithic GaAs receiver for optical interconnect systems,” IEEE J. Solid-State Circuits, vol. 29, no. 3, pp. 328-331, Mar. 1994.
[2] C. Takano, K. Tanaka, A. Okubora, and J. Kasahara, “Monolithic integration of 5-Gb/s optical receiver block for short distance communication,” IEEE J. Solid-State Circuits, vol. 27, no. 10, pp. 1431-1433, Oct. 1992.
[3] M. Bitter, R. Bauknecht, W. Hunziker, and H. Melchior, “Monolithic InGaAs-InP p-i-n/HBT 40-Gb/s optical receiver module,” IEEE Photon. Technol. Lett., vol. 12, no. 1, pp. 74-76, Jan. 2000.
[4] H.-G. Bach, A. Beling, G. C. Mekonnen, and W. Schlaak, “Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEIC’s and modules,” IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 6, pp. 1445-1450, Nov.-Dec. 2002.
[5] D. Huber, R. Bauknecht, C. Bergamaschi, M. Bitter, A. Huber, T. Morf, A. Neiger, M. Rohner, I. Schnyder, V. Schwarz, and A. Jackel, “InPInGaAs single HBT technology for photoreceiver OEIC’s at 40 Gb/s and beyond,” J. Lightwave Technol., vol. 18, no. 7, pp. 992-1000, Jul. 2000.
[6] S. Radovanovic, A. J. Annema, and B. Nauta, “A 3-Gb/s Optical Detector in Standard CMOS for 850-nm Optical Communication,” IEEE J. of Solid-State Circuits, vol. 40, no. 8, pp. 1706-1717, Aug. 2005.
[7] C. Hermans, and M. S. J. Steyaert, “A High-Speed 850-nm Optical Receiver Front-End in 0.18-?m CMOS,” IEEE J. of Solid-State Circuits, vol. 41, no. 7, pp. 1606-1614, Jul. 2006.
[8] M. Jutzi, M. Grözing, E. Gaugler, W. Mazioschek, and M. Berroth, “2-Gb/s CMOS Optical Integrated Receiver with a Spatially Modulated Photodetector,” IEEE Photon. Technol. Lett., vol. 17, no. 6, pp. 1268-1270, Jun. 2005.
[9] B. Yang, J. D. Schaub, S. M. Csutak, D. L. Rogers, and J. C. Campbell, “10-Gb/s All-Silicon Optical Receiver,” IEEE Photon. Technol. Lett., vol. 15, no. 5, pp. 745-747, May 2003.
[10] S. M. Csutak, S. Dakshina-Murthy and J.C. Campbell, “CMOS-compatible planar silicon waveguide-grating-couplerphotodetectors fabricated on silicon-on-insulator (SOI) substrates,” IEEE J. of Quantum Electronics, vol 38, no. 5, pp. 477-480, May 2002.
[11] S. M. Csutak, J. D. Schaub, W. E. Wu, R. Shimer, and J. C. Campbell, “High-Speed Monolithically Integrated Silicon Photoreceivers Fabricated in 130-nm CMOS Technology,” IEEE J. of Lightwave Technology, vol 20, no. 9, pp. 1724-1729, Sep. 2002.
[12] C. L. Schow, L. Schares, S. J. Koester, G. Dehlinger, R. John and F. E. Doany, “A 15 Gb/s 2.4 V Optical Receiver Using a Ge-on-SOI Photodiode and a CMOS IC,” IEEE Photon. Technol. Lett., vol. 18, no. 19, pp. 1981-1983, Oct. 2006.
[13] W. Z. Chen, Y. L. Cheng, and D. S. Lin, “A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end,” IEEE J. of Solid-State Circuits, vol. 40, no. 6, pp. 1388-1396, Jun. 2005.
[14] C. L. Schow, J. D. Schaub, R. Li, and J. C. Campbell, “A 1 Gbit/s monolithically integrated silicon nMOS optical receiver,” IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 6, pp. 1035-1039, Nov.-Dec. 1998.
[15] H. Zimmermann and T. Heide, “A monolithically integrated 1-Gb/s optical receiver in 1-?mCMOS Technology,” IEEE Photon. Technol. Lett., vol. 13, no. 7, pp. 711-713, Jul. 2001.
[16] P. J. W. Lim, A. Y. C. Tzeng, H. L. Chuang, and S. A. St Onge, “A 3.3-V monolithic photodetector/CMOS preamplifier for 531 Mb/s optical data link applications,” in IEEE ISSCC Dig. Tech. Papers, 1993, pp. 96-97.
[17] W. K. Huang, Y. C. Liu and Y. M. Hsin, “A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology,” IEEE Photon. Technol. Lett., vol. 19, no. 4, pp. 197-199, Feb. 2007.
[18] W. K. Huang, Y. C. Liu and Y. M. Hsin, “Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers,” Electron. Lett., vol. 44, no. 1, pp. 52-53, Jan. 2008.
[19] R. Fujimoto, K. Kojima and S. Otaka, “A 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier,” IEEE Journal of Solid-State Circuits, vol. 37, no. 7, pp. 852-856, Sep. 2002,
[20] K. W. Kobayashi, “An InP HBT common-base amplifier with tunable transimpedance for 40 Gb/s applications,” 24th Annual Technical Digest, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 20-23 Oct. 2002, pp. 155-158
Chapter 5
[1] A. Beling, H.-G. Bach, G. G. Mekonnen, R. Kunkel, and D. Schmidt, “Miniaturizedwaveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity,” IEEE Photon. Technol. Lett., vol. 17, no. 10, pp. 2152-2154, 2005.
[2] Y.-S. Wu, P.-H. Chiu, and J.-W. Shi, “High-speed and high-power performance of a dual-step evanescently-coupled uni-traveling-carrier photodiode at a 1.55 ?m wavelength,” in Proc. OFC 2007, Anaheim, CA, Mar. 2007, Paper OThG1.
[3] Y.-S. Wu, J.-W. Shi, P.-H. Chiu, and Wei Lin, “High-Performance Dual-Step Evanescently Coupled Uni-Traveling-Carrier Photodiodes,” IEEE Photon. Technol. Lett., vol. 19, no. 20, pp. 1682-1684, 2007.
[4] M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett., vol. 17, no. 7, pp. 1510-1512, 2005.
[5] L. Colace, M. Balbi, G. Masini, G. Assanto, H.-C. Luan, and L. C. Kimmerling, “Ge on Si p-i-n photodiodes operating at 10 Gbit/s,” Appl. Phys. Lett., vol. 88, no. 101111, 2006.
[6] C. L. Schow, L. Schares, S. J. Koester, G. Dehlinger, R. John, and F. E. Doany, “A 15-Gb/s 2.4-V Optical Receiver Using a Ge-on-SOI Photodiode and a CMOS IC,” IEEE Photon. Technol. Lett., vol. 18, no. 19, pp. 1981-1983, 2006.
Appendix A
[1] T. Takeuchi, T. Nakata, K. Makita, and T. Torikai, “A high-power and high-efficiency photodiode with an evanescently coupled graded-index waveguide for 40 Gb/s applications,” Optical Fiber Communication Conference and Exhibit, vol. 3, WQ2-1- WQ2-3, 2001.
[2] T. Takeuchi, T. Nakata, K. Makita and M. Yamaguchi, “High-speed, high-power and high-efficiency photodiodes with evanescently coupled graded-index waveguide,” Electron. Lett., vol. 36, no. 11, pp. 972-973, 2000.
Appendix B
[1] J. Sturm, M. Leifhelm, H. Schatzmayr, S. Groiss and H. Zimmermann, “ Optical receiver IC for CD/DVD/blue-laser application,” IEEE Journal of Solid-State Circuits, vol. 40, no. 7, pp. 1406-1413, 2005.
[2] Y. Tao, A.M. Pappu and A.B. Apsel, “Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS,” IEEE Photon. Technol. Lett., vol. 18, no. 1, pp. 55-57, 2006.
[3] K. S. Lai, J. C. Huang, K.Y.-J.Hsu, “High-Responsivity Photodetector in Standard SiGe BiCMOS Technology,” IEEE Elect. Dev. Lett., vol. 28, no. 9, pp. 800-802, 2007. |