氮化銦鎵系列多層量子井之光學特性探討

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丁肇敏(Chao-Min Ting) 查詢紙本館藏

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論文名稱

氮化銦鎵系列多層量子井之光學特性探討
(Optical characterization of InGaN-based Multiple Quantum Well Structures)

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摘要(中)

本論文以Optical pumping量測氮化銦鎵/氮化(鋁)鎵多層量子井之光增益頻譜，並以光激光譜量測與簡單的理論計算來分析驗證我們實驗室所成長磊晶的品質及判定結構設計之正確性。
針對不同層數量子井來探討活化能所扮演的角色與光增益頻譜的比較。發現當量子井層數增加時，活化能值提高。由於量子井層數較多，整體光場侷限與增益介質增加造成在相同激發強度下有好的光增益表現。
　　使用氮化鋁鎵作為位障層在自發性光譜中強度較強，代表了提高載子侷限。但是應用在雷射二極體中卻使得整體光場侷限因子下降，因此整體模組增益值表現不如預期，需要較高的激發強度與較長的共振腔才可達到雷射現象。

關鍵字(中)

★ 氮化銦鎵
★ 量子井

關鍵字(英)

★ InGaN

論文目次

第一章序論
第二章氮化鎵及光增益相關理論
2.1 簡介……………………………………………………………......3
2.2 極化場…………………………………………………………......4
2.3 雷射增益量測簡介……………………………………………......9
2.4 光激發量測………………………………………………………12
2.5 光增益物理機制討論……………………………………………14
第三章實驗方法
3.1 簡介………………………………………………………………16
3.2 氮化銦鎵/氮化(鋁)鎵多層量子井結構成長……………………16
3.3 光譜量測裝置……………………………………………………18
第四章不同層數量子井結構之光性分析
4.1 簡介………………………………………………………………23
4.2 活化能在不同層數量子井之扮演角色與分析…………………24
4.3 激發光譜特性研究………………………………………………29
4.4 不同層數之量子井對光增益影響………………………………33
4.5 本章總結…………………………………………………………37
第五章改變量子井能帶結構之光性分析
5.1 簡介……………………………………………………………...38
5.2 能帶結構改變之量子井極化場效應……………………………39
5.3 能帶結構改變對量子井光場侷限效應…………………………45
5.4 本章總結…………………………………………………………51
第六章結論
參考資料

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指導教授

綦振瀛(Jen-Inn Chyi)

審核日期

2004-7-15

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