參考文獻 |
[1] H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, “Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies,” J. Appl. Phys., vol. 76, p. 1363, 1994.
[2] S. C. Binari, K. Doverspike, G. Kelner, H. B. Dietrich, and A. E. Wikenden, “GaN FETs for microwave and high-temperature applications,” Solid-State Electron., vol. 41, p.177, 1997.
[3] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, “Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes gro-w on GaN substrates,” Appl. Phys. Lett., vol. 72, p. 2014, 1998.
[4] M. Razeghi, and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys., vol. 79, p. 7433, 1996.
[5] S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, “GaN: Processing, defects, and devices,” J. Appl. Phys., vol. 86, p. 1, 1999.
[6] Kevin Linthicum, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor, and Robert Davis, “Pendeoepitaxy of gallium nitride thin films,” Appl. Phys. Lett., vol. 75, p. 196, 1999.
[7] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett., vol. 84, p. 855, 2004.
[8] Chul Huh, Kug-Seung Lee, Eun-Jeong Kang, and Seong-Ju Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys., vol. 93, p. 9383, 2003.
[9] http://www.cree.com/ftp/pub/CPR3CM.pdf, High Power Blue LED chips (SiC substrate) have a geometrically enhanced Epi-down design to maximize light extraction efficiency, and require only a single wire bond connection.
[10] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Appl. Phys.Lett., vol. 78, p. 3379, 2001.
[11] M. Koike, N. Koide, S. Asami, J. Umezaki, S. Nagai, S. Yamasaki, N. Shibata, H. Amano, and I. Akasaki, “InGaN/GaN multiple quantum wells green LEDs,” in Proc. SPIE International Society for OpticalEngineering, vol. 3002, pp. 36–39, 1997.
[12] S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, “Hole Compensation Mechanism of p-Type GaN Films,” Jpn. J. Appl. Phys., vol. 31, p.1258, 1992.
[13] M. S. Minsky, M. White, and E. L. Hu, “Room-temperature photoenhanced wet etching of GaN,” Appl. Phys. Lett., vol. 68, p. 1531, 1996.
[14] C. Youtsey, I. Adesida, L. T. Romano, and G. Bulman, “Smooth n-type GaN surfaces by photoenhanced wet etching,” Appl. Phys. Lett., vol. 72, p. 560, 1997.
[15] J. K. Sheu, Y. K. Su, G. C. Chi, W. C. Chen, C. Y. Chen, C. N. Huang, J. M. Hong, Y. C. Yu, C. W. Wang, and E. K. Lin, “The effect of thermal annealing on the Ni/Au contact of p-type GaN,” J. Appl. Phys., vol. 83, p. 3172, 1998.
[16] Li-Chien Chen, Fu-Rong Chen, Ji-Jung Kai, Li Chang, Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih, “Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN,” J. Appl. Phys., vol. 86, p. 3826, 1999.
[17] Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih, “Low-resistance ohmic conta- cts to p-type GaN,” Appl. Phys. Lett., vol. 74, p. 1275, 1999.
[18] Hidenori Ishikawa, Setsuko Kobayashi, Y. Koide, S. Yamasaki, S. Nagai, J. Umezaki, M. Koike, and Masanori Murakami, “Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces,” J. Appl. Phys., vol. 81, p. 1315, 1997.
[19] Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Kwang-Kuo Shih, Li-Chien Chen, Fu-Rong Chen, and Ji-Jung Kai, “ Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films,” J. Appl. Phys., vol. 86, p. 4491, 1999.
[20] B. Liu, E. Lambers, W. B. Alexander, and P. H. Holloway, “Effects of a Ni cap layer on transparent Ni/Au ohmic contacts to p-GaN,” J. Vac. Sci. Technol. B 20(4), p. 1394, 2002.
[21] Handbook of Chemistry and Physics, David R. Lide, editor in chief 82nd Edition page 12-133.
[22] Zhifang Fan, S. Noor Mohammad, Wook Kim, Ozgur Aktas, Andrei E. Botchkarev, and Hadis Morkoc, “Very low resistance multilayer Ohmic contact to n-GaN,” Appl. Phys. Lett., vol. 68, p. 1672, 1996.
[23] Abhishek Motayed, Ravi Bathe, Mark C. Wood, Ousmane S. Diouf, R. D. Vispute, and S. Noor Mohammad, “Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN,” J. Appl. Phys., vol. 93, p. 1087, 2003.
[24] Ching-Ting Leea, and Hsiao-Wei Kao, “Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN,” Appl. Phys. Lett., vol. 76, p. 2364, 2000.
[25] E. F. Chor, D. Zhang, H. Gong, G. L. Chen, and T. Y. F. Liew, “Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN,” J. Appl. Phys., vol. 90, p. 1242, 2001.
[26] V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, “Thermally-stable low-
resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN,” J. Appl. Phys., vol. 92, p. 1712, 2002.
[27] T. Nakayama, H. Miyamoto, Y. Ando, Y. Okamoto, T. Inoue, K. H-ataya, and M. Kuzuhara, “Low-contact-resistance and smooth-surface Ti/Al/Nb/
Au ohmic electrode on AlGaN/GaN heterostructure,” Appl. Phys. Lett., vol. 85, p. 3775, 2004.
[28] N. A. Papanicolaou, A. Edwards, M. V. Rao, J. Mittereder, and W. T. Anderson, “Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN,” J. Appl. Phys., vol. 87, p. 380, 2000.
[29] S. Ruvimov, Z. Lilliental-Weber, J. Washburn, K. J. Duxstad, E. E. Haller, Z.-F. Fan, S. N. Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, and H. Morkoc, “Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN,” Appl. Phys. Lett., vol. 69, p. 1556, 1996.
[30] B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen, and J. W. Yang, “Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN,” Appl. Phys. Lett., vol. 70, p. 57, 1997.
[31] S. E. Mohney, D. J. MacMahon, and K. A. Whitmire, “Condensed phase equilibria in the Cr–Ga–N system,” Mater. Sci. Engin., B49, pp. 152–154, 1997.
[32] E. V. Kalinina, N. I. Kuznetsov, A. I. Babanin, V. A. Dmitriev, and A. V. Shchukarev, “Structural and electrical properties of Schottky barriers on n-GaN,” Diamond and Related Materials., vol. 6, pp. 1528–1531, 1997.
[33] Dong-Feng Wang, Feng Shiwei, C. Lu, Abhishek Motayed, Muzar Ja-h, S. Noor Mohammad, Kenneth A. Jones, and L. Salamanca-Riba, “Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN,” J. Appl. Phys., vol. 89, p. 6214, 2001.
[34] 許文杰, “大面積覆晶式氮化鎵發光二極體之研製與特性探討,” 國立中央大學電機所碩士論文, 頁36–44, 2004.
[35] S. Noor Mohammad, “Contact mechanisms and design principles for nonalloyed ohmic contacts to n-GaN,” J. Appl. Phys., vol. 95, p. 48–56, 2004.
[36] N. A. Papanicolaou, M. V. Rao, J. Mittereder, and W. T. Anderson, “Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing,” J. Vac. Sci. Technol., B19, p. 261, 2001.
[37] A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, and I. Adesida, “Schottky barrier properties of various metals on n-type GaN,” Semicond. Sci. Technol., vol. 11, pp. 1464–1467, 1996. |