高功率環型面射型雷射

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姓名

江長鴻(Chang-Hun Jiang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

高功率環型面射型雷射
(High Power Ring-Type Vertical-Cavity Surface-Emitting Laser)

相關論文

★ 氮化鎵串接式綠光發光二極體在超高溫(200 ℃)操作的高速表現之和其內部之載子動力學	★ 32Gbit/s 低耗能 850nm InAlGaAs 應變量子井面射型雷射
★ 具有大面積且在高靈敏度、低暗電流操作下具有頻寬增強效應的10 Gbit/sec平面式 InAlAs 累增崩潰光二極體	★ 應用串接式技術達到超高飽和電流-頻寬乘積(7500mA-GHz,75mA,100GHz)的近彈道傳輸光偵測器
★ 利用鋅擴散方式在半絕緣(GaAs)基板上製作可室溫操作、高速且低漏電流的InAs光檢測器	★ 應用超寬頻光子傳送混波器達到遠距分佈及調變的20Gbit/s無誤碼無線振幅偏移調變資料傳輸於W-頻帶
★ 具有同時高速資料傳輸及產生直流電功率的砷化鎵/磷化銦鎵的雷射功率轉換器	★ 超高速(>1Gb/s)可見光發光二極體應用於塑膠光纖通訊及內部載子動力學的研究
★ 具有超低耗能,傳輸資料量比值在850nm波段超高速(40 Gb/s)面射型雷射	★ 超高速(~300GHz)光偵測器的製造與其在毫米波生物晶片上的應用
★ 超高速覆晶式(>300GHz)高功率(~mW)光偵測器製作與量測	★ 具有單空間模態,低發散角,高功率的鋅擴散二維850nm面射型雷射陣列
★ 應用於850到1550 nm波長光連結且具有高速,高效率和大面積的p-i-n光偵測器	★ 應用於中距離(2km)至短距離光連結知單模態、高速、高輸出光功率的850nm波段面射型雷射
★ 應用在光連接具有高可靠度高速(>25Gbit/sec) 850光波段的垂直共振腔雷射	★ 具有高可靠度/高功率輸出與直流到次兆赫茲 (≧300GHz)操作頻寬的超高速光偵測器和其覆晶式封裝設計與分析

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摘要(中)

高功率單模態的面射型雷射，一直是近年來大家努力的方向之一。主要受限於發光的孔徑大小，單模態面射型雷射的特性，一直難以提昇。
本文從環形的發光孔徑出發，藉由鋅擴散和離子佈值技術，嘗試以不同的發光幾何孔徑，來達成高功率和單一空間模態的操作特性，
在實驗上，主要設計並製作了兩種幾何圖形作為發光孔徑，分別是環形發光孔徑和花瓣狀的環型發光孔徑。他們都是由雷射陣列的觀點來審視，尤其是後者，實際的發光孔徑就是雷射陣列。從量測得到的特性上，環形的元件可達到14 mW 的高功率，2 mW單模功率。而花瓣狀的環型發光孔徑，也具有14 mW 的高功率，單點(single spot)的功率更大於7.5 mW，而且兩者都具有半高寬在5-6度之間的低發散角。這也證明了這種幾何圖形的發光孔徑，搭配上鋅擴散和離子佈值技術，具有相當優異的特性。

摘要(英)

High power and single spatial mode vertical cavity surface-emitting lasers ware developed in recent years. It’s mainly limited by the magnitude of light-emitting aperture, the characteristics of single mode VCSEL is difficult to improve.
In this thesis, we demonstrate the single spatial mode vertical-cavity surface-emitting lasers (VCSEL) with a ring-shaped light-emitting aperture and single spot floral ring-type laser array, respectively. These devices are realized by the Zn diffusion and ion-implantation technique, at a wavelength of 850nm. Relative to the control VCSEL with an ordinary circular aperture and the same geometry and size, these demonstrated devices can suppress the higher-order transverse mode more effectively without affecting the threshold current and output power. Compared with typical reported single-mode VCSELs, a larger light-emitting aperture and current-confined area with a smaller divergence angle of the output beam, and lower differential resistance are achieved with these present structures.

關鍵字(中)

★ 面射型雷射
★ 半導體雷射

關鍵字(英)

★ semiconductor laser
★ surface-emitting laser

論文目次

摘要 i
Abstract ii
誌謝 iii
Contents iv
Figures and tables list vi
Chapter 1 Introduction 1
1.1 The epitaxial structure of VCSEL 3
1.2 Electrical and optical configurations of VCSELs 5
1.3 The problems of single-mode VCSELs 8
1.4 Outline of this thesis 10
Chapter 2 Theories 11
2.1 Effects of zinc diffusion on VCSEL 11
2.2 Ion implantation 14
2.3 The ring-shaped light-emitting aperture 17
2.4 The floral ring-type array 21
Chapter 3 Experiments 26
3.1 Zinc diffusion 26
3.2 Ion implantation 29
3.3 Metal contact and Trench 31
3.4 Rapid thermal anneal 33
Chapter 4 Results and discussions 36
4.1 The measurement system setup 36
4.2 Ring-shaped light-emitting aperture 39
4.3 The floral ring-type array 47
Chapter 5 Conclusions 57
Reference 59
Publication list 65

參考文獻

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指導教授

楊英杰、許晉瑋
(Ying-Jay Yang、Jin-Wei Shi)

審核日期

2005-7-19

推文