整合式的混階模擬器之開發及其在振盪電路上的應用

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姓名

張宗偉(Tsung-Wei Chang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

整合式的混階模擬器之開發及其在振盪電路上的應用
(Development of a Unified Mixed-Level Simulator and its Application to Oscillation Circuits)

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摘要(中)

本論文研究主要目的是開發出一個整合(Unified)結構的模擬環境，即是將我們原來的各種不同版本的元件模擬或電路模擬變成整合的版本，我們創造出一個零組件檔(comp.h)，將所有元件模擬和電路模擬有關的副函式都放進此零組件檔(comp.h)，主程式將變的更簡潔且對使用者而言除錯更容易，所有應用皆共用一個零組件檔，使得精確度較高。另外，我們發展出半導體方形元件(Square Element),方形元件包含由主導半導體的帕松方程式(Poisson’s Equation)及連續方程式(Continuity Equation)轉換成等效電路模型,使我們可以利用電路模擬來模擬半導體元件行為，且使得元件和外接電路之間能夠整合為一體。不同以往的差別是我們可以由主程式定義元件參數來呼叫方形元件執行二維半導體元件和其外接電路的混階(Mixed-Level)模擬應用。接下來我們利用小電阻接線技巧(Small-R Method)，來解決一些混階模擬應用的外接電路跳線問題，使得Band-Solver變為可行。另外我們併入MOSFET的電容效應，使MOSFET的電路模型更完整，最後模擬了一些振盪電路的設計與分析。

摘要(英)

In order to have a simple and efficient simulation environment for user, we develop a unified program structure. That is to say, all of related functions which include circuit elements and square elements have been set in the component file (comp.h). We only need to include “comp.h” at the beginning of the main program when we get ready to work. The main program will become shorter, and main programs for different applications can share the same component file. Furthermore, we develop the device square element to execute application of mixed-level simulations of 2-D device with external circuit elements, and the square element can be defined and called by user. The principle of square element is to formulate Poisson’s and continuity equations into the equivalent-circuit model. Next, the small-r method will let band-solver become workable on the mixed-level simulations. Besides, the MOSFET capacitances for circuit model will be completed. In addition, we design some applications of oscillation circuits.

關鍵字(中)

★ 混階模擬
★ 振盪電路

關鍵字(英)

★ oscillation circuit
★ Mixed-Level

論文目次

1. Introduction 1
2. Development of a Unified Structure 3
2.1 Main-Program Separation 3
2.2 The Square Element 5
2.3 Application of a Simple Diode Switching 10
3. Development of Mixed-Level simulator with Band-Solver 14
3.1 The Small-R Method for Band-Solver 14
3.2 Negative-Differential-Resistance Oscillator 17
3.3 Ring Oscillator 21
4. Circuit Model of MOSFET Capacitances and Design of Oscillation Circuit
4.1 MOSFET Capacitances for Circuit Model 24
4.1.1 C-V Model 24
4.1.2 C-V Measurement 29
4.1.3 Circuit Application 31
4.2 Colpitts Oscillator 34
4.3 Crystal Oscillator 38
5. Conclusion 43

參考文獻

Reference
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[2] F.-W. Lin, “Device partition method and its application to 2-D CMOS device simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2003.
[3] C.-C. Chang, J.-F. Dai and Y.-T. Tsai, “Verification of 1D BJT numerical simulation and its application to mixed-level device and circuit simulation”, Int. J. Numerical Modeling: Electronic Networks. Device and Fields, pp. 81-94, 2003.
[4] Piet Vanassche, Georges Gielen, and Willy Sansen, “Efficient Analysis of Slow-Varying Oscillator Dynamics”, IEEE Transactions on Circuits and Systems I: Regular papers, VOL. 51, NO. 8, August 2004, pp. 1457-1467.
[5] Behzad Razavi, “Design of Analog CMOS Integrated Circuits”, the McGraw-Hill Company, Inc., 2001.
[6] Giuseppe Massobrio, and Paolo Antognetti, “Semiconductor Device Modeling with SPICE”, McGraw-Hill Company, Inc.,1993.
[7] Y.-M. Sun, “Levelized Incomplete LU Factorization and Its application to Quasi-Static MOSFET C-V Simulation”, M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2001.
[8] A. S. Sedra and Kenneth C. Smith, “Microelectronic Circuit”, Oxford University Press, Inc.,1998.
[9] R Achenbach, M. Feuerstack-Raible, F. Hiller, M. Keller, K. Meier, H. Rudolph, and R Saur-Brosch, “ A digitally temperature-compensated crystal oscillator ” Solid-State Circuits, IEEE Journal of Volume: 35 10, Oct. 2000, pp. 1502-1506.
[10] E.A. Vittoz, M.G..R. Degrauwe, and S. Bitz, “High-performance crystal oscillator circuits: theory and application”, Solid-State Circuits, IEEE Journal of Volume: 23 3, June 1988, pp. 774-783.

指導教授

蔡曜聰(Yao-Tsung Tsai)

審核日期

2005-6-30

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