參考文獻 |
[1] Pei-Wen LI, David M. T. KUO, Wei-Ming LIAO and Ming-J. TSAI, “Optical and Electronic Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator”, Phys. Rev. Lett. 43, 7788 (2004)
[2] J. Webber, M. I. Alonso,” Near-band-gap photoluminescence of SiGe alloys”, Phys. Rev. B 40, 5683 (1989)
[3] S. Luryi, A. Kastalsky, and J. C. Bean,” Near infrared detector on a silicon chip”, IEEE Trans. Electron Dev. ED-31,1135 (1984)
[4] H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, and S. Luryi,”GexSi1-x strained-layer superlattice waveguide photodetectors operating near 1.3μm”, Appl. Phys. Lett. 48, 963 (1986)
[5] L. Colace, G. Masini, F. Galluzzi, and G. Assanto, “Near infrared light detectors based on UHV CVD epitaxial Ge on Si (100)”, Materials Research Society Symposium - Proceedings, v 486, 1998, p 193-198
[6] 施敏,”半導體元件物理與製作技術(第二版)”,2002
[7] Tsutomu Tashiro, Toru Tatsumi, Mitsuhiro Sugiyama, Toshiki Hashimoto, and Takenori Morikawa,” A Selective Epitaxial SiGe/Si Planar Photodetector for Si-Based OEIC’s”, IEEE Trans. Electron Dev. ED-44,545 (1997)
[8] H. Temkin, J. C. Bean, T. P. Pearsall, N. A. Olsson, and D. V. Lang,“High photoconductive gain in GexSi1-x strained-layer superlattice detectors operating at λ= 1.3 μm,” Appl. Phys. Lett., 49, 155, 1986
[9] Z. Pei, et al,” High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)”, IEEE Electron Devices Meeting,297,2002
[10] 廖偉明,”高效能矽鍺互補型金氧半電晶體之研製”,碩士論文,國立中央大學,民國91年
[11] Yoshihito Maeda,” Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO2 matrix Evidence in support of the quantum confinement mechanism”, Phys. Rev. B 51, 1658 (1995)
[12] W.-H. Chang et al ,”Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots”, Appl. Phys. Lett., 83, 2958 , 2003
[13] B.-C. Hsu, S. T. Chang, et al ,” A High Efficient 820 nm MOS Ge Quantum Dot Photodetector”, IEEE ELECTRON DEVICE LETTERS, 318,2003
[14] Yoshihito Maeda, Nobuo Tsukamoto, Yoshiaki Yazawa, Yoshihiko Kanemitsu and Yasuaki Masumoto, “Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices”, Appl. Phys. Lett. 59, 3168 (1991)
[15] K. V. Shcheglov, C. M. Yang, K. J. Vahala, and Harry A. Atwater, “Electroluminescence and photoluminescence of Ge-implanted Si/SiO2/Si structures”, Appl. Phys. Lett. 66, 745 (1995)
[16] Jia-Yu Zhang, Yong-Hong Yea and Xi-Lin Tan, ” Electroluminescence and carrier transport of SiO2 film containing different density of Ge nanocrystals”, Appl. Phys. Lett. 74, 2459 (1999)
[17] T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, and J.-M. Lourtioz et al, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition”, Appl. Phys. Lett. 77, 1822 (2000)
[18] Takamitsu Kobayashi, Toshiaki Endoh, Hisashi Fukuda, Shigeru Nomura, Akira Sakai, and Yuji Ueda, ” Ge nanocrystals in SiO2 films”, Appl. Phys. Lett. 71, 1195 (1997)
[19] P. W. Li, W. M. Liao et al,”Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator”, Appl. Phys. Lett. 83, 4628 (2003)
[20] 林宏年,呂嘉裕,”局部與全面形變矽通道(strained Si channel)互補式金氧半(CMOS)之材料、製程與元件特性分析”,第十二卷第一期,毫微米通訊
[21] H. K. Liou, P. Mei, U. Gennser, and E. S. Yang,” Effects of Ge concentration on SiGe oxidation behavior”, Appl. Phys. Lett. 59, 1200 (1991)
[22] D. R. Lide, M. J. Astle and W. H. Beyer, “CRC Handbook of Chemistry and Physics”,74th, 1995
[23] 林上偉,”應用於單電子電晶體之矽/鍺量子點研製”,碩士論文,國立中央大學,民國93年
[24] C. W. Liu, Member, IEEE, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu , “A Novel Photodetector Using MOS Tunneling Structures”, IEEE EDL, 21, 307 (2000) |