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    "Tsai,MJ"的相关文件  

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    显示 12 项.

    类别 日期 题名 作者 档案
    [機械工程學系] 期刊論文 2011 Effects of bias on properties of Ti-C:H films coated by filtered cathodic vacuum arc Lee,S; Chu,CL; Gwo,J; Huang,JJ; Tsai,MJ; Wang,SM
    [機械工程學系] 期刊論文 2010 High temperature oxidation behavior of interconnect coated with LSCF and LSM for solid oxide fuel cell by screen printing Lee,S; Chu,CL; Tsai,MJ; Lee,J
    [機械工程學系] 期刊論文 2010 La(0.6)Sr(0.4)Co(0.2)Fe(0.8)O(3) protective coatings for solid oxide fuel cell interconnect deposited by screen printing Tsai,MJ; Chu,CL; Lee,S
    [電機工程學系] 期刊論文 2011 Fast-Write Resistive RAM (RRAM) for Embedded Applications Sheu,SS; Cheng,KH; Chiang,PC; Lin,WP; Lee,HY; Chen,PS; Chen,YS; Wu,TY; Chen,FT; Su,KL; Kao,MJ; Tsai,MJ; Chang,MF
    [電機工程研究所] 期刊論文 2004 Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature Li,PW; Liao,WM; Kuo,DMT; Lin,SW; Chen,PS; Lu,SC; Tsai,MJ
    [電機工程研究所] 期刊論文 2004 Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator Li,PW; Kuo,DMT; Liao,WM; Tsai,MJ
    [電機工程研究所] 期刊論文 2003 Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications Li,PW; Liao,WM; Shih,CC; Kuo,TS; Lai,LS; Tseng,YT; Tsai,MJ
    [電機工程研究所] 期刊論文 2003 Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator Li,PW; Liao,WM; Lin,SW; Chen,PS; Lu,SC; Tsai,MJ
    [電機工程研究所] 期刊論文 2003 High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications Li,PW; Liao,WM; Shih,CC; Kuo,TS; Lai,LS; Tseng,YT; Tsai,MJ
    [物理研究所] 期刊論文 2004 Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments Lee,SW; Chen,LJ; Chen,PS; Tsai,MJ; Liu,CW; Chen,WY; Hsu,TM
    [物理研究所] 期刊論文 2004 Room temperature 1.3 and 1.5 mu m electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers Pei,Z; Chen,PS; Lee,SW; Lai,LS; Lu,SC; Tsai,MJ; Chang,WH; Chen,WY; Chou,AT; Hsu,TM
    [物理研究所] 期刊論文 2003 Room-temperature electroluminescence at 1.3 and 1.5 mu m from Ge/Si self-assembled quantum dots Chang,WH; Chou,AT; Chen,WY; Chang,HS; Hsu,TM; Pei,Z; Chen,PS; Lee,SW; Lai,LS; Lu,SC; Tsai,MJ

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