"Chuo,CC"的相關文件
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類別 |
日期 |
題名 |
作者 |
檔案 |
| [電機工程研究所] 期刊論文 |
1999 |
Growth and device performance of GaN Schottky rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Chi,GC; Dang,GT; Zhang,AP; Ren,F; Cao,XA; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
1999 |
Role of excess As in low-temperature grown GaAs subjected to BCl3 reactive ion etching |
Chang,MN; Chuo,CC; Lu,CM; Hsieh,KC; Yeh,NT; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
Electroreflectance study on the polarization field in InGalInGaN multiple quantum wells |
Hsu,TM; Lai,CY; Chang,WH; Pan,CC; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2004 |
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation. |
Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Boundary effects on the optical properties of InGaN multiple quantum wells |
Peng,LH; Lai,CM; Shih,CW; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
High-brightness inverted InGaN-GaN multiple-quantum-well light-emitting diodes without a transparent conductive layer |
Lee,CM; Chuo,CC; Chen,IL; Chang,JC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2003 |
Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells |
Peng,LH; Shih,CW; Lai,CM; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy |
Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing |
Chuo,CC; Chang,MN; Pan,FM; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Localized and quantum-well state excitons in AlInGaN laser-diode structure |
Chuo,CC; Chen,GT; Lin,MI; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2002 |
Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure |
Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA |
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| [電機工程研究所] 期刊論文 |
2001 |
Comparison of GaN p-i-n and Schottky rectifier performance |
Zhang,APP; Dang,GT; Ren,F; Cho,H; Lee,KP; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2001 |
Device characteristics of the GaN/InGaN-doped channel HFETs |
Hsin,YM; Hsu,HT; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures |
Chen,CC; Hsieh,KL; Chi,GC; Chuo,CC; Chyi,JI; Chang,CA |
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| [電機工程研究所] 期刊論文 |
2001 |
GaN electronics for high power, high temperature applications |
Pearton,SJ; Ren,F; Zhang,AP; Dang,G; Cao,XA; Lee,KP; Cho,H; Gila,BP; Johnson,JW; Monier,C; Abernathy,CR; Han,J; Baca,AG; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2001 |
Improvement of diodes performance with a multiple-pair buffer layer by MOCVD |
Yang,CC; Wu,MC; Chi,GC; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells |
Chuo,CC; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells |
Lai,CY; Hsu,TM; Chang,WH; Tseng,KU; Lee,CM; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2001 |
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors |
Johnson,JW; Gila,BP; Luo,B; Lee,KP; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Ren,F |
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| [電機工程研究所] 期刊論文 |
2001 |
Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes |
Lee,CM; Chuo,CC; Dai,JF; Zheng,XF; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells |
Chuo,CC; Lee,CM; Nee,TE; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer |
Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC |
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| [電機工程研究所] 期刊論文 |
2000 |
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers |
Zhang,AP; Dang,G; Ren,F; Han,J; Cho,H; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC; Chu,SNG |
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| [電機工程研究所] 期刊論文 |
2000 |
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor |
Johnson,JW; Luo,B; Ren,F; Gila,BP; Krishnamoorthy,W; Abernathy,CR; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
High voltage GaN Schottky rectifiers |
Dang,GT; Zhang,AP; Ren,F; Cao,XNA; Pearton,SJ; Cho,H; Han,J; Chyi,JI; Lee,CM; Chuo,CC; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2000 |
Processing and device performance of GaN power rectifiers |
Zhang,AP; Dang,GT; Cao,XA; Cho,H; Ren,F; Han,J; Chyi,JI; Lee,CM; Nee,TE; Chuo,CC; Chi,GC; Chu,SNG; Wilson,RG; Pearton,SJ |
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| [電機工程研究所] 期刊論文 |
2000 |
Spatial distribution of electrical properties in GaN p-i-n rectifiers |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Stimulated emission study of InGaN/GaN multiple quantum well structures |
Liao,CC; Feng,SW; Yang,CC; Lin,YS; Ma,KJ; Chuo,CC; Lee,CM; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures |
Chen,CC; Chuang,HW; Chi,GC; Chuo,CC; Chyi,JI |
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| [電機工程研究所] 期刊論文 |
2000 |
Surface and bulk leakage currents in high breakdown GaN rectifiers |
Ren,F; Zhang,AP; Dang,GT; Cao,XA; Cho,H; Pearton,SJ; Chyi,JI; Lee,CM; Chuo,CC |
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| [電機工程研究所] 期刊論文 |
2000 |
Temperature dependence of GaN high breakdown voltage diode rectifiers |
Chyi,JI; Lee,CM; Chuo,CC; Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Chu,SNG; Wilson,RG |
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| [電機工程研究所] 期刊論文 |
2000 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors |
Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chuo,CC; Lee,CM |
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| [光電科學與工程學系] 期刊論文 |
2004 |
Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition |
Tu,RC; Tun,CJ; Chuo,CC; Lee,BC; Tsai,CE; Wang,TC; Chi,J; Lee,CP; Chi,GC |
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| [光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers |
Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP |
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| [光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers |
Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG |
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| [光電科學與工程學系] 期刊論文 |
2003 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature |
Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC |
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| [物理研究所] 期刊論文 |
2000 |
Temperature dependent performance of GaN Schottky diode rectifiers |
Cao,XA; Dang,GT; Zhang,AP; Ren,F; Pearton,SJ; Lee,CM; Chuo,CC; Chyi,JI; Chi,GC; Han,J; Chu,SNG; Wilson,RG |
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