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    "Shieh,JL"的相关文件  

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    显示 26 项.

    类别 日期 题名 作者 档案
    [電機工程研究所] 期刊論文 2001 A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors Hwang,HP; Cheng,YS; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Characteristics of a In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterojunction and its application on HEMT's Chan,YJ; Wu,CS; Chen,CH; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Defect study on the strain-relaxed InxAl1-xAs epilayers (x<0.4) grown on GaAs Shieh,JL; Chang,MN; Cheng,YS; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates Shieh,JL; Chang,MN; Cheng,YS; Chyi,JI
    [電機工程研究所] 期刊論文 1997 GaAs metal-semiconductor-metal photodetectors with recessed cathodes and/or anodes Yuang,RH; Shieh,JL; Chyi,JI; Chen,JS
    [電機工程研究所] 期刊論文 1997 High thermal conductive passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors Hwang,HP; Cheng,YS; Shieh,JL; Pan,JW; Chyi,JI
    [電機工程研究所] 期刊論文 1997 Overall performance improvement in GaAs MSM photodetectors by using recessed-cathode structure Yuang,RH; Shieh,JL; Chyi,JI; Chen,JS
    [電機工程研究所] 期刊論文 1996 Characteristics of multistack multiquantum barrier and its application to graded-index separate confinement heterostructure lasers Chyi,JI; Wang,SK; Gau,JH; Shieh,JL; Pan,JW
    [電機工程研究所] 期刊論文 1996 DC and microwave characteristics of In-0.3(AlxGa1-x)(0.7)As/In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs Hwang,HP; Shieh,JL; Pan,JW; Chou,CC; Chyi,JI
    [電機工程研究所] 期刊論文 1996 Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers Chyi,JI; Gau,JH; Wang,SK; Shieh,JL; Pan,JW
    [電機工程研究所] 期刊論文 1996 Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates Yang,MT; Chan,YJ; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1996 GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors Chan,YJ; Wu,CS; Chyi,JI; Shieh,JL
    [電機工程研究所] 期刊論文 1996 High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes Yuang,RH; Chien,YJ; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1996 In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterostructure and its application on HEMTs Wu,CS; Chan,YJ; Chen,CH; Shieh,JL; Chyi,JL
    [電機工程研究所] 期刊論文 1996 Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates Chyi,JI; Shieh,JL; Pan,JW; Lin,RM
    [電機工程研究所] 期刊論文 1996 Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping Chyi,JI; Chien,YJ; Yuang,RH; Shieh,JL; Pan,JW; Chen,JS
    [電機工程研究所] 期刊論文 1996 Strain relaxation and crystallographic tilt of compositional graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) epilayers grown on GaAs substrates Shieh,JL; Chyi,JI; Pan,JW; Lin,RM
    [電機工程研究所] 期刊論文 1995 LOW-THRESHOLD INALGAAS/ALGAAS STRAINED-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY CHYI,JI; GAU,JH; SHIEH,JL; PAN,JW; CHAN,YJ; HONG,JW; HUANG,MF
    [電機工程研究所] 期刊論文 1995 SCHOTTKY-BARRIER HEIGHTS OF INXAL1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) EPILAYERS ON GAAS CHYI,JI; SHIEH,JL; LIN,RJ; PAN,JW; LIN,RM
    [電機工程研究所] 期刊論文 1995 STUDY OF THE OPTICAL-PROPERTIES OF IN-0.52(ALXGA1-X)(0.48)AS BY VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY PAN,JW; SHIEH,JL; GAU,JH; CHYI,JI; LEE,JC; LING,KJ
    [電機工程研究所] 期刊論文 1994 BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE SHIEH,JL; CHYI,JI; LIN,RJ; LIN,RM; PAN,JW
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL
    [電機工程研究所] 期刊論文 1994 MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW
    [電機工程研究所] 期刊論文 1994 THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI
    [電機工程研究所] 期刊論文 1994 UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS HWANG,HP; SHIEH,JL; LIN,RM; CHYI,JI; TU,SL; PENG,CK; YANG,SJ

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