Conductor formation through phase transformation in Ti-oxide thin films

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Title:	Conductor formation through phase transformation in Ti-oxide thin films
Authors:	劉正毓;Liu, Y. S.;Lin, Y. H.;Wei, Y. S.;Liu, C. Y.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Annealing;Applied sciences;Characterization and Evaluation of Materials;Chemistry and Materials Science;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Cross-disciplinary physics: materials science;rheology;Deposition by sputtering;Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures;Electronic transport phenomena in thin films and low-dimensional structures;Electronics;Electronics and Microelectronics;Exact sciences and technology;Instrumentation;Light emitting diodes;Materials;Materials Science;Methods of deposition of films and coatings;film growth and epitaxy;Optical and Electronic Materials;Optical properties;Oxidation;Phase transformations;Physics;Quartz;Solid State Physics;Substrates;Thin films;Titanium;Titanium dioxide;Transmittance;X-ray photoelectron spectroscopy
Date:	2012-01-01
Issue Date:	2026-04-21 13:48:37 (UTC+8)
Publisher:	Springer New York;Boston: Springer US
Abstract:	摘要： The resistance and transmittance of Ti-oxide thin films sputtered on quartz substrates were studied. The electrical and optical properties can be changed by varying the percentage of O 2 introduced during the sputtering. The lowest resistivity for the sputtered Ti-oxide thin film was 2.30 × 10 −2 Ω cm for 12.5% O 2 , which was obtained after annealing at 400°C in ambient oxygen. The results of x-ray photoelectron spectroscopy (XPS) curve-fitting indicate that the Ti-oxide thin film contained both Ti 2 O 3 and TiO 2 phases during deposition. The Ti 2 O 3 phase was transformed into the stable TiO 2 phase during annealing. The Ti 2 O 3 -TiO 2 phase transformation initiated the substitution reaction. The substitution of Ti 4+ ions in the TiO 2 phase for the Ti 3+ ions in the Ti 2 O 3 phase created the free electrons. This Ti 2 O 3 -TiO 2 phase transformation demonstrates the potential mechanism for conduction in the annealed Ti-oxide thin films. The transmittance of the annealed Ti-oxide thin films can be as high as approximately 90% at the 400 nm wavelength with the introduction of 16.5% O 2 . This result indicates that the annealed Ti-oxide thin films are excellent candidates for use as transparent conducting layers for ultraviolet (UV) or near-UV light-emitting diode (LED) devices. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2012-01 出處： Journal of electronic materials, 2012-01, Vol.41 (1), p.166-171 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2011 版權： 2015 INIST-CNRS 版權： TMS 2012 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-011-1822-7 識別號： CODEN: JECMA5
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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