Springer New York;Boston: Springer Science and Business Media LLC
摘要:
摘要： As used in wafer-level bonding in microelectromechanical system (MEMS) devices, the eutectic Al/a-Ge bilayer is characterized by its remarkable hermetic sealing after annealing. For MEMS packaging, this study investigates metal-induced crystallization (MIC) of the amorphous Ge and the layer exchange of Al and Ge, mainly by scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) analysis, and x-ray photoelectron spectroscopy (XPS). A kinetic mechanism to explain the layer exchange of Al and Ge is developed. Experimental results indicate that round-shaped extrusions form on the upper surface of the Ge layer when the bilayer is annealed at 400°C, i.e., close to the Al-Ge eutectic temperature. The morphology and the formation of the extrusions are also discussed. Finally, the bilayer is tested by immersion in red ink, with these results indicating that no red ink penetrates the bonding area of two bonded bilayer films. Therefore, results of this study demonstrate the feasibility of applying the eutectic Al/a-Ge bilayer to MEMS as a hermetic sealing material. 其他題名： Journal of Elec Materi 出版者： Boston: Springer Science and Business Media LLC 出版日期： 2012-01-01 出處： Journal of Electronic Materials, 2012-01, Vol.41 (1), p.159-165 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2011 版權： 2015 INIST-CNRS 版權： TMS 2012 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-011-1796-5 識別號： CODEN: JECMA5
