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| 題名: | Comparison of short and long wavelength absorption electron donor materials in C60-based planar heterojunction organic photovoltaics |
| 作者: | 陳錦地;Liu, Shun-Wei;Su, Wei-Cheng;Lee, Chih-Chien;Lin, Chi-Feng;Yeh, Shih-Chieh;Chen, Chin-Ti;Lee, Jiun-Haw |
| 貢獻者: | 理學院化學學系 |
| 關鍵詞: | Applied sciences;C60;Compound structure devices;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Electron states;Electronics;Energy;Exact sciences and technology;Excitons and related phenomena;Field-effect transistor;Fill factor;Natural energy;Open circuit voltage;Photovoltaic conversion;Physics;Planar heterojunction organic photovoltaics;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Solar cells. Photoelectrochemical cells;Solar energy;Transistors |
| 日期: | 2012-01-01 |
| 上傳時間: | 2026-04-21 13:49:17 (UTC+8) |
| 出版者: | Elsevier BV;Amsterdam: Elsevier B.V |
| 摘要: | 摘要： Bis(naphthylphenylaminophenyl)fumaronitrile (NPAFN): High Carrier mobility. Field-Effect Transistor Material for Planar Heterojunction Organic Photovoltaics with Enhanced Efficiency and Large Open Circuit Voltage of 1 V [Display omitted] ► OPVs have been created using short wavelength absorption of NPAFN. ► We report that NPAFN exhibits a high hole mobility as determined by OFET. ► NPAFN OPVs display the power conversion efficiency (ηPC) of 2.22%. Buckminsterfullerene, C60-based planar heterojunction (PHJ) organic photovoltaics (OPVs) have been created using a short wavelength absorption (λmax=490nm) electron-donating bis(naphthylphenylaminophenyl)fumaronitrile (NPAFN). NPAFN exhibits a hole mobility greater than 0.07cm2V−1s−1 as determined by its field-effect transistor. It can be attributed to such hole mobility that enables a thin layer (<10nm) NPAFN in PHJ OPV, ITO/NPAFN/C60/bathocuproine/Al. Because of the low lying HOMO energy level (5.75eV) of NPAFN and relatively high ionization potential ITO (∼5.58eV), such OPVs exhibit a very high open circuit voltage of ∼1.0V, relatively high fill factor of 0.60, and a relatively high shunt resistance of 1100Ωcm−2, which all compensate for a relatively low short circuit current of 3.15mAcm−2 due to the short absorption wavelength and inferred short exciton diffusion length of NPAFN. Altogether, NPAFN OPVs display a power conversion efficiency (ηPC) of 2.22%, which is better than other long wavelength absorption materials in similar PHJ OPVs, such as pentacene (λmax 670nm, HOMO 5.12eV, ηPC 1.50%) and copper phthalocyanine (λmax 624, 695nm, HOMO 5.17eV, ηPC 1.43%).
出版者： Amsterdam: Elsevier B.V
出版日期： 2012-10-01
出處： Organic Electronics, 2012-10, Vol.13 (10), p.2118-2129
版權： 2012
版權： 2015 INIST-CNRS
識別號： ISSN: 1566-1199
識別號： EISSN: 1878-5530
識別號： DOI: 10.1016/j.orgel.2012.06.006 |
| 顯示於類別: | [化學學系] 期刊論文
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