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    题名: Tunable electrical memory characteristics by the morphology of self-assembled block copolymers: PCBM nanocomposite films
    作者: 孫亞賢;Chen, Jhao-Cheng;Liu, Cheng-Liang;Sun, Ya-Sen;Tung, Shih-Huang;Chen, Wen-Chang
    贡献者: 工學院化學工程與材料工程學系
    日期: 2012-01-14
    上传时间: 2026-04-21 13:49:47 (UTC+8)
    出版者: Royal Society of Chemistry
    摘要: 摘要: Resistive switchable memory devices were fabricated using self-assembled composite thin films of asymmetric poly(styrene- block -4-vinylpyridine) (PS- b -P4VP) block copolymers (BCP) and fullerene derivatives (PCBM). L1 (with a longer PS block) was comprised of discrete vertical P4VP nanocylinders embedded within the PS matrix whereas L2 (with a longer P4VP block) revealed a reverse morphology with a horizontal orientation. They were used to control the spatial location or distribution of the PCBM and the resultant memory characteristics. The devices with ITO/BCP:PCBM/Al configurations exhibited variable multi-electronic characteristics, changing from insulating to bistable memory switching and highly conducting, as the PCBM content increased. The L1 :PCBM memory device showed non-volatile write-once-read-many-times (WORM) memory behavior but the L2 :PCBM device exhibited a volatile nature of static random access memory (SRAM). Both L1 and L2 :PCBM composite devices revealed the improved switching performance upon solvent annealing procedures of the composite thin film. Our results suggested that the controlled morphology of the BCP/PCBM composite could create nanoscale charge-storage elements for a high density memory device with a reduced bit cell size. A poly(styrene- block -4-vinylpyridine):PCBM composite film sandwich device exhibits tunable electrical characteristics of conduction, bistable switching or insulating behaviors, depending on the block length, PCBM loading ratio and self-assembled morphology.
    出版日期: 2011-12-08
    識別號: ISSN: 1744-683X
    識別號: EISSN: 1744-6848
    識別號: DOI: 10.1039/c1sm06622f
    显示于类别:[化學工程與材料工程學系 ] 期刊論文

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