摘要： Resistive switchable memory devices were fabricated using self-assembled composite thin films of asymmetric poly(styrene- block -4-vinylpyridine) (PS- b -P4VP) block copolymers (BCP) and fullerene derivatives (PCBM). L1 (with a longer PS block) was comprised of discrete vertical P4VP nanocylinders embedded within the PS matrix whereas L2 (with a longer P4VP block) revealed a reverse morphology with a horizontal orientation. They were used to control the spatial location or distribution of the PCBM and the resultant memory characteristics. The devices with ITO/BCP:PCBM/Al configurations exhibited variable multi-electronic characteristics, changing from insulating to bistable memory switching and highly conducting, as the PCBM content increased. The L1 :PCBM memory device showed non-volatile write-once-read-many-times (WORM) memory behavior but the L2 :PCBM device exhibited a volatile nature of static random access memory (SRAM). Both L1 and L2 :PCBM composite devices revealed the improved switching performance upon solvent annealing procedures of the composite thin film. Our results suggested that the controlled morphology of the BCP/PCBM composite could create nanoscale charge-storage elements for a high density memory device with a reduced bit cell size. A poly(styrene- block -4-vinylpyridine):PCBM composite film sandwich device exhibits tunable electrical characteristics of conduction, bistable switching or insulating behaviors, depending on the block length, PCBM loading ratio and self-assembled morphology. 出版日期： 2011-12-08 識別號： ISSN: 1744-683X 識別號： EISSN: 1744-6848 識別號： DOI: 10.1039/c1sm06622f
