摘要： ► The intermetallic compound, Al 2Cu, has similar resistivity with Ni. ► The growth of the intermetallic compound, Al 2Cu, detours the current paths and reduces the current crowding. ► A mathematic model successfully predicts the occurrence of early failure in the samples, based on the methodology. ► Simulation results proved the experimental phenomena and the mathematic analyses. Bi-metallic thin film redistribution layers, deposited in the Through-Silicon-Via (TSV), were stressed by electrical current for failure analysis. A new mechanism suggested that the formation of intermetallic compounds, at the corners of the vias, redistributed and reduced the electrical current at the current crowding region. This study proposes a model and deduces a kinetic analysis to demonstrate the effect of the current distribution caused by the volume of the compound. A simulation was used to substantiate the experimental and analytical results. 出版者： Elsevier B.V 出版日期： 2012-01-16 出處： Materials chemistry and physics, 2012-01, Vol.132 (1), p.162-165 版權： 2011 Elsevier B.V. 識別號： ISSN: 0254-0584 識別號： EISSN: 1879-3312 識別號： DOI: 10.1016/j.matchemphys.2011.11.017
