Silver nanowire-polymer composite electrode for high performance solution-processed thin-film transistors

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100124

Title:	Silver nanowire-polymer composite electrode for high performance solution-processed thin-film transistors
Authors:	陳銘洲;Chen, Liang-Hsiang;Lin, Pang;Chen, Ming-Chou;Huang, Peng-Yi;Kim, Choongik;Ho, Jia-Chong;Lee, Cheng-Chung
Contributors:	理學院化學學系
Keywords:	Anthradithiophene;Applied sciences;Conductive electrode;Cross-disciplinary physics: materials science;rheology;Electrical engineering. Electrical power engineering;Electronics;Exact sciences and technology;Materials;Materials science;Metals. Metallurgy;Nanoscale materials and structures: fabrication and characterization;Organic thin-film transistor (OTFT);Physics;Production techniques;Quantum wires;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Silver nanowire;Surface treatment;Transistors
Date:	2012-01-01
Issue Date:	2026-04-21 13:50:16 (UTC+8)
Publisher:	Elsevier BV;Amsterdam: Elsevier B.V
Abstract:	摘要： [Display omitted] ► Conductive AgNWs/PEDOT:PSS composite films were prepared and characterized. ► The composite films exhibited good electrical and materials properties. ► Solution-processed OTFTs were fabricated using the composite films as conductors. ► The solution-processed TFT showed high electrical performance. Silver nanowires (AgNWs)/poly-(3,4-ethylenedioxythiophene/polystyrene sulphonate) (PEDOT:PSS) composite films as conductive electrode for OTFTs were prepared, and their optical and electrical properties were investigated. The conductive composite films used in this study afforded low sheet resistance of <140Ω/sq and transmittance as high as 70% in the visible region. For the composite film with 0.1wt.% of AgNWs, contact resistance as low as 2.7×104Ωcm was obtained, as examined by Transfer length model (TLM) analysis, and work function of the corresponding film was 5.0eV. Furthermore, the composite films were employed as source and drain electrodes for top-gate/bottom-contact organic thin-film transistors (OTFTs) based on solution-processed 5,11-bistriethylsilylethynyl anthradithiophene (TES-ADT) as organic semiconductor, and the resulting device showed high electrical performance with carrier mobility as high as 0.21cm2/Vs. 出版者： Amsterdam: Elsevier B.V 出版日期： 2012-10-01 出處： Organic electronics, 2012-10, Vol.13 (10), p.1881-1886 版權： 2012 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 1566-1199 識別號： EISSN: 1878-5530 識別號： DOI: 10.1016/j.orgel.2012.05.040
Appears in Collections:	[Department of Chemistry] journal & Dissertation

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