Stabilization of poly(3-hexylthiophene)/PCBM morphology by hydroxyl group end-functionalized P3HT and its application to polymer solar cells

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100135

Title:	Stabilization of poly(3-hexylthiophene)/PCBM morphology by hydroxyl group end-functionalized P3HT and its application to polymer solar cells
Authors:	陳錦地;Chen, Yi-Hao;Huang, Ping-Tsung;Lin, Keng-Ching;Huang, Yu-Jui;Chen, Chin-Ti
Contributors:	理學院化學學系
Keywords:	Applied sciences;Compatibilizer;Electronics;End-functionalized P3HT;Energy;Exact sciences and technology;H-bond;Natural energy;Optoelectronic devices;PCBM;Photovoltaic conversion;Poly(3-hexylthiophene);Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Solar cells. Photoelectrochemical cells;Solar energy
Date:	2012-01-01
Issue Date:	2026-04-21 13:50:38 (UTC+8)
Publisher:	Elsevier BV;Amsterdam: Elsevier B.V
Abstract:	摘要： [Display omitted] ► An end-functionalized P3HT (HOC-P3HT-COH) is used to stabilize morphology of P3HT and PCBM blend. ► HOC-P3HT-COH forms H-bond with PCBM and stabilizes morphology of P3HT/PCBM. ► Domain size of the PCBM crystals in the annealed P3HT/PCBM film is diminished. ► Surface roughness of the P3HT/PCBM film is also decreased. ► Thermal stability of the P3HT/PCBM based devices is also enhanced through the H-bonds formation. A new concept to stabilize the morphology of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C 61-butyric acid methyl ester (PCBM) blend through H-bond formation by using a hydroxyl group end-functionalized P3HT (HOC-P3HT-COH) as a compatibilizer is presented. Domain size of the PCBM crystals in the annealed P3HT/PCBM film is diminished with addition of HOC-P3HT-COH. Surface roughness of the P3HT/PCBM film also becomes smoother with addition of HOC-P3HT-COH. Thermal stability of solar cell device is improved significantly through the H-bond formation between HOC-P3HT-COH and PCBM. A high performance and thermal stable polymer solar cell with 4.06% power conversion efficiency under AM1.5G irradiation is fabricated with 5% HOC-P3HT-COH in P3HT/PCBM layer. 出版者： Amsterdam: Elsevier B.V 出版日期： 2012-02-01 出處： Organic electronics, 2012-02, Vol.13 (2), p.283-289 版權： 2011 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 1566-1199 識別號： EISSN: 1878-5530 識別號： DOI: 10.1016/j.orgel.2011.11.019
Appears in Collections:	[Department of Chemistry] journal & Dissertation

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