摘要： Vertical thin-GaN LED was successfully fabricated on the GaN LED epi-layers grown on the patterned-sapphire substrate with the pyramidal pattern by low-temperature Cu/Sn/Ag wafer bonding at 150 °C. An inverted pyramidal pattern formed on the n-GaN surface after the GaN epi-layer was transferred onto Si wafer, which resulted from the pyramidal pattern on the patterned-sapphire substrate. The inverted pyramidal pattern has an equivalent function with roughening the n-GaN surface. With higher inverted pyramidal pattern coverage, the light extraction efficiency can be greatly enhanced. In addition, we found that the 4-fold increase (from 13.6% to 53.8%) in the pyramidal pattern coverage on patterned-sapphire substrate only gives the GaN LED epi-layer about 5.7% enhancement in the internal quantum efficiency. 出版者： Elsevier Ltd 出版日期： 2012-02-01 出處： Microelectronics and reliability, 2012-02, Vol.52 (2), p.381-384 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2010 Elsevier Ltd 識別號： ISSN: 0026-2714 識別號： DOI: 10.1016/j.microrel.2010.11.010
