Versatile α,ω-disubstituted tetrathienoacene semiconductors for high performance organic thin-film transistors

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100157

Title:	Versatile α,ω-disubstituted tetrathienoacene semiconductors for high performance organic thin-film transistors
Authors:	陳銘洲;Youn, Jangdae;Huang, Peng-Yi;Huang, Yu-Wen;Chen, Ming-Chou;Lin, Yu-Jou;Huang, Hui;Ortiz, Rocio Ponce;Stern, Charlotte;Chung, Ming-Che;Feng, Chieh-Yuan;Chen, Liang-Hsiang;Facchetti, Antonio;Marks, Tobin J.
Contributors:	理學院化學學系
Keywords:	fused thiophene;n-type organic semiconductor;tetrathienoacene;TTA
Date:	2012-01-11
Issue Date:	2026-04-21 13:51:32 (UTC+8)
Publisher:	Wiley-VCH Verlag;Weinheim: WILEY-VCH Verlag
Abstract:	摘要： Facile one‐pot [1 + 1 + 2] and [2 + 1 + 1] syntheses of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene (tetrathienoacene; TTA) semiconductors are described which enable the efficient realization of a new TTA‐based series for organic thin‐film transistors (OTFTs). For the perfluorophenyl end‐functionalized derivative DFP‐TTA, the molecular structure is determined by single‐crystal X‐ray diffraction. This material exhibits n‐channel transport with a mobility as high as 0.30 cm2V−1s−1 and a high on‐off ratio of 1.8 × 107. Thus, DFP‐TTA has one of the highest electron mobilities of any fused thiophene semiconductor yet discovered. For the phenyl‐substituted analogue, DP‐TTA, p‐channel transport is observed with a mobility as high as 0.21 cm2V−1s−1. For the 2‐benzothiazolyl (BS‐) containing derivative, DBS‐TTA, p‐channel transport is still exhibited with a hole mobility close to 2 × 10−3 cm2V−1s−1. Within this family, carrier mobility magnitudes are strongly dependent on the semiconductor growth conditions and the gate dielectric surface treatment. Perfluorophenyl‐functionalized tetrathienothiophene (DFP‐TTA) exhibits n‐ channel transport with a mobility as high as 0.30 cm2 V−1 s−1 and an on‐off ratio of 1.8 × 107. The large TTA core size and good solid state packing in combination with optimum film growth conditions enhance electron transport in DFP‐TTA thin‐film transistors. 其他題名： Adv. Funct. Mater 出版者： Weinheim: WILEY-VCH Verlag 出版日期： 2012-01-11 出處： Advanced functional materials, 2012-01, Vol.22 (1), p.48-60 資源來源： Wiley Online Library Journals 版權： Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1616-301X 識別號： EISSN: 1616-3028 識別號： DOI: 10.1002/adfm.201101053
Appears in Collections:	[Department of Chemistry] journal & Dissertation

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