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| 題名: | Enhanced stability of organic field-effect transistors with blend pentacene/anthradithiophene films |
| 作者: | 陳銘洲;Wang, Chia-Hsin;Jian, Shuo-De;Chan, Sheng-Wen;Ku, Ching-Shun;Huang, Peng-Yi;Chen, Ming-Chou;Yang, Yaw-Wen |
| 貢獻者: | 理學院化學學系 |
| 關鍵詞: | Applied sciences;C: Electron Transport, Optical and Electronic Devices, Hard Matter;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Electron, ion, and scanning probe microscopy;Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures;Electronic transport in multilayers, nanoscale materials and structures;Electronics;Exact sciences and technology;Materials;Physics;Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Structure of solids and liquids;crystallography;Transistors |
| 日期: | 2012-01-12 |
| 上傳時間: | 2026-04-21 13:51:36 (UTC+8) |
| 出版者: | American Chemical Society;Columbus, OH: American Chemical Society |
| 摘要: | 摘要： By taking advantage of the similarity between pentacene (PEN) and anthradithiophene (ADT) in molecular dimension and charge transport property, we have produced organic field-effect transistors (OFETs) with active layers consisting of well-blended PEN/ADT films. The blend-films were characterized by atomic force microscopy, X-ray diffraction, and soft X-ray spectroscopies. It is found that the blend-films containing no more than 10% of ADT exhibit a single-phase structure, large crystallinity, and improved oxidation resistance, as compared to PEN. The best performance achieved with 90% PEN-OFET gives a mobility of 0.37 cm2 V–1 s–1 and an on/off current ratio of 107. More importantly, this device provides a 3-fold improvement in operational stability as well as extended environmental stability. After the repetitive scanning between on and off states of OFET in ambient 940 times, the mobility decreases only to 0.33 cm2 V–1 s–1. In comparison, the mobility of PEN-OFET decreases from 0.46 to 0.22 cm2 V–1 s–1. After 3-month storage in ambient, the mobility of the optimal device decreases to 0.1 cm2 V–1 s–1, whereas PEN-OFET almost loses its mobility.
其他題名： J. Phys. Chem. C
出版者： Columbus, OH: American Chemical Society
出版日期： 2012-01-12
出處： Journal of physical chemistry. C, 2012-01, Vol.116 (1), p.1225-1231
資源來源： American Chemical Society Journals
版權： Copyright © 2011 American Chemical Society
版權： 2014 INIST-CNRS
識別號： ISSN: 1932-7447
識別號： EISSN: 1932-7455
識別號： DOI: 10.1021/jp2084555 |
| 顯示於類別: | [化學學系] 期刊論文
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