Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate

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Title:	Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate
Authors:	劉正毓;Lin, H.Y.;Chen, Y.J.;Chang, C.L.;Li, X.F.;Kuo, C.H.;Hsu, S.C.;Liu, C.Y.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Analysis;Applied and Technical Physics;Biomaterials;Chemical vapor deposition;Efficiency;Etching;Inorganic Chemistry;Light emitting diodes;Luminescence;Materials Engineering;Materials research;Materials Science;Morphology;Nanotechnology;Scanning electron microscopy;Semiconductors;Spectrum analysis;Studies;Temperature
Date:	2012-03-28
Issue Date:	2026-04-21 13:53:32 (UTC+8)
Publisher:	Cambridge University Press;New York, USA: Cambridge University Press
Abstract:	摘要： Chemical wet etching on c-plane sapphire wafers by three etching solutions (H3PO4, H2SO4, and H3PO4/H2SO4 mixing solution) was studied. Among these etching agents, the mixing H3PO4/H2SO4 solution has the fastest etching rate (1.5 μm/min). Interestingly, we found that H2SO4 does not etch the c-plane sapphire wafer in thickness; instead, a facet pyramidal pattern is formed on the c-plane sapphire wafer. GaN light-emitting diode (LED) epitaxial structure was grown on the sapphire wafer with the pyramidal pattern and the standard flat sapphire wafer. X-ray diffraction and photoluminescence measurement show that the pyramidal pattern on the sapphire wafer improved crystalline quality but augmented the compressive stress level in the GaN LED epilayer. The horizontal LED chips fabricated on the pyramidal-patterned sapphire wafer have a larger light output than the horizontal LED chips fabricated on the standard flat sapphire wafer by 20%. 其他題名： Journal of Materials Research 出版者： New York, USA: Cambridge University Press 出版日期： 2012-03-28 出處： Journal of materials research, 2012-03, Vol.27 (6), p.971-977 資源來源： ProQuest ABI/INFORM Collection 版權： Copyright © Materials Research Society 2012 版權： The Materials Research Society 2012 識別號： ISSN: 0884-2914 識別號： EISSN: 2044-5326 識別號： DOI: 10.1557/jmr.2012.24 識別號： CODEN: JMREEE
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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