Light extraction improvement by forming volcanic crater on N-polar GaN emitting surface

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題名:	Light extraction improvement by forming volcanic crater on N-polar GaN emitting surface
作者:	劉正毓;Chang, You-Hsien;Yang, Chun-Ting;Liu, Cheng-Yi
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	GaN LEDs;laser lift-off;Light emitting diodes;light extraction;Threading dislocations;wet etching
日期:	2012-05-01
上傳時間:	2026-04-21 13:55:25 (UTC+8)
出版者:	Wiley-VCH Verlag;Berlin: WILEY-VCH Verlag
摘要:	摘要： By lifting‐off the patterned sapphire substrate of flip‐chip GaN‐based light emitting diodes, a 2‐D periodic pattern of inverted circular cavities was created on the N‐polar GaN (N‐GaN) surface. The inverted circular cavities on the N‐GaN surface evolve to discrete volcanic craters by wet etching in hot KOH solution. The formation of volcanic craters greatly enhances the light extraction efficiency on the patterned GaN surface by 27%. In addition, a correlation is observed between the threading dislocation distribution and the etching pattern on the N‐GaN surface, which implies that the threading dislocation seemingly guides the etching on the N‐GaN surface. A dislocation‐orientated etching mechanism on the N‐GaN surface is proposed in this study. 其他題名： Phys. Status Solidi A 出版者： Berlin: WILEY-VCH Verlag 出版日期： 2012-05 出處： Physica status solidi. A, Applications and materials science, 2012-05, Vol.209 (5), p.998-1001 資源來源： Wiley Online Library - AutoHoldings Journals 版權： Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1862-6300 識別號： ISSN: 1862-6319 識別號： EISSN: 1862-6319 識別號： DOI: 10.1002/pssa.201127581
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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