中大學術數位典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/100261
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 94201/94201 (100%)
Visitors : 81578544      Online Users : 2584
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100261


    Title: Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package
    Authors: 劉正毓;Yang, C.T.;Liu, W.C.;Liu, C.Y.
    Contributors: 工學院化學工程與材料工程學系
    Keywords: CHIPS;Copper;DIODES;Dissipation;HEAT TRANSFER;Light-emitting diodes;MEASUREMENT;Packages;PACKAGING;Spreading;Thermal resistance;Two dimensional
    Date: 2012-05-01
    Issue Date: 2026-04-21 13:55:32 (UTC+8)
    Publisher: Elsevier Ltd.;Elsevier Ltd
    Abstract: 摘要: The thermal resistance of the first-level Cu dissipation substrate (RCu) with different Cu thickness is investigated in this work. Using the “constant-forward-voltage” method, the thermal resistances of the first-level Cu dissipation substrates (RCu) were measured against different Cu thickness. In the initial increase in the Cu thickness (up to 0.6mm), RCu decreases with the Cu thickness. As the Cu thickness over 0.6mm, RCu starts to slightly increase with the Cu thickness. The thermal resistance (RCu) of the Cu substrate is composed of the z-direction thermal resistance (Rz) and the two-dimensional horizontal spreading resistance (Rs). The initial decrease in RCu should attribute to the decrease in Rs with the Cu thickness. After the initial increase in RCu, the RCu would increase and be dominated by the Rz increase with the Cu thickness. Intriguingly, a minimum RCu value occurs at the Cu thickness of about 0.6mm. Also, in this paper, we discuss the possible inaccuracy factors of the “constant-forward-voltage” method.
    出版者: Elsevier Ltd
    出版日期: 2012-05-01
    出處: Microelectronics Reliability, 2012-05, Vol.52 (5), p.855-860
    資源來源: Elsevier ScienceDirect Journals Complete - Autoholdings
    版權: 2011
    識別號: ISSN: 0026-2714
    識別號: DOI: 10.1016/j.microrel.2011.05.002
    Appears in Collections:[Department of Chemical and Materials Engineering] journal & Dissertation

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML15View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明