摘要： A conjugated poly(fluorene-thiophene) donor and a tethered phenanthro[9,10-d]imidazole acceptor (PFT-PI) was used as the active layer in flexible nonvolatile resistor memory devices with low threshold voltages (±2 V), low switching powers (100 W cm 2 ), large ON/OFF memory windows (10 4 ), good retention (>10 4 s) and excellent endurance against electric and mechanical stimulus. A conjugated poly(fluorene-thiophene) donor and a tethered phenanthro[9,10-d]imidazole acceptor ( PFT-PI ) was explored for flexible nonvolatile flash memory devices. 出版日期： 2012-08-15 資源來源： Royal Society of Chemistry 識別號： ISSN: 1359-7345 識別號： EISSN: 1364-548X 識別號： DOI: 10.1039/c2cc34257j
