Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si 1-x C x layers on Si(1 0 0)

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Title:	Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si 1-x C x layers on Si(1 0 0)
Authors:	鄭紹良;Cheng, S.L.;Tseng, Y.C.;Lee, S.W.;Chen, H.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Annealing;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Diffusion;Exact sciences and technology;Nanocomposites;Nanocontact;Nanomaterials;Nanosphere lithography;Nanostructure;Nanowires;Ni silicide;Nickel;Nickel silicide;Phase formation;Physics;Si1−xCx
Date:	2012-09-01
Issue Date:	2026-04-21 13:58:52 (UTC+8)
Publisher:	Elsevier;Amsterdam: Elsevier B.V
Abstract:	摘要： ► The interfacial reactions of nanoscale Ni metal dots on single-crystal Si1−xCx/Si(100) substrates were investigated. ► The incorporation of C to Si substrates exhibited significant beneficial effects on improving the thermal stability of low-resistivity NiSi nanocontacts. ► The process window of low-resistivity NiSi in the Ni nanodots/Si1−xCx(100) sample was greatly extended by 200–250°C as compared to that in the Ni nanodots/Si(100) sample. ► Highly curled and tangled amorphous SiOx nanowires with diameters of 8–20nm were found to form on the 900°C annealed Ni nanodots/Si1−xCx(100) samples. We report here on the first study of the interfacial reactions of nanoscale Ni metal dots on single-crystal Si1−xCx(100) substrates at various heat treatments. The formation of high-resistivity NiSi2 phase was found to be more favorable for the miniature size Ni nanodots. The incorporation of C to Si substrates exhibited significant beneficial effects on improving the thermal stability of low-resistivity NiSi nanocontacts. The process window of low-resistivity NiSi in the Ni nanodots/Si1−xCx(100) sample was greatly extended by 200–250°C as compared to that in the Ni nanodots/Si(100) sample. The presence of C atoms is thought to lower the NiSi nanocontact/Si1−xCx interface energy and/or to block the Ni diffusion paths during high temperature annealing. For the Ni nanodots/Si1−xCx(100) sample annealed at 900°C, highly curled and tangled amorphous SiOx nanowires with diameters of 8–20nm were found to form. The growth process of these amorphous SiOx nanowires could be explained by the solid–liquid–solid (SLS) mechanism. 出版者： Amsterdam: Elsevier B.V 出版日期： 2012-09-01 出處： Applied surface science, 2012-09, Vol.258 (22), p.8713-8718 版權： 2012 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0169-4332 識別號： EISSN: 1873-5584 識別號： DOI: 10.1016/j.apsusc.2012.05.079
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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