Transparent p-type AlN:SnO 2 and p-AlN:SnO 2/n-SnO 2:In 2O 3 p-n junction fabrication

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Title:	Transparent p-type AlN:SnO 2 and p-AlN:SnO 2/n-SnO 2:In 2O 3 p-n junction fabrication
Authors:	劉正毓;Liu, Y. S.;Hsieh, C. I.;Wu, Y. J.;Wei, Y. S.;Lee, P. M.;Liu, C. Y.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Electric potential;Leakage current;P-n junctions;Thin films;Tin dioxide;Tin oxides;Voltage;X-ray photoelectron spectroscopy
Date:	2012-09-17
Issue Date:	2026-04-21 13:59:14 (UTC+8)
Publisher:	American Institute of Physics;AIP Publishing
Abstract:	摘要： This study produced transparent p-type AlN-doped SnO2 thin films by annealing sputtered sandwich SnO2/AlN/SnO2 thin films. Both Al3+-Sn4+ and N3−O2− substitution reactions—which are the main sources for the hole carriers—were identified by XPS analysis. The hole concentration of the p-type AlN:SnO2 thin films was as high as 1.074 × 1019 cm−3. Using the produced p-AlN:SnO2 thin film, transparent p-AlN:SnO2/n-SnO2:In2O3 p-n junctions were fabricated and characterized as follows: (1) A low leakage current (2.97 × 10−5 A at −5 V); (2) a 2.17 eV turn-on voltage; and (3) a low ideality factor (12.2). 出版者： AIP Publishing 出版日期： 2012-09-17 出處： Applied Physics Letters, 2012-09, Vol.101 (12) 資源來源： American Institute of Physics (AIP) - Revues 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4754134
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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