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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100377


    Title: Analysis of chlorine ions in antimony-doped tin oxide thin film using synchrotron grazing incidence X-ray diffraction
    Authors: 吳子嘉;Lin, Yang-Yi;Wu, Albert T;Ku, Ching-Shun;Lee, Hsin-Yi
    Contributors: 工學院化學工程與材料工程學系
    Date: 2012-10-01
    Issue Date: 2026-04-21 13:59:40 (UTC+8)
    Publisher: Japan Society of Applied Physics;The Japan Society of Applied Physics
    Abstract: 摘要: Antimony-doped tin oxide (SnO 2 :Sb, ATO) films have been deposited on glass substrates using atmospheric pressure chemical vapor deposition (APCVD) method. The precursors are mixed with SnCl 4 , SbCl 5 , and O 2 to prepare the films. This study used synchrotron grazing incidence X-ray diffraction (GIXRD) to investigate the film microstructure. Our results show that the precursors of chlorine ions were involved in the doping mechanism, causing the microstructure of films to change slightly. The film has an average transmittance between 85.8 and 82.1% within a visible spectral range from 400 to 800 nm. The minimal resistivity was $6.1\times 10^{-4}$ $\Omega$ cm after doping. The synchrotron GIXRD data show that the chlorine ions caused the lattice constant change. A possible mechanism was proposed to explain the enhancement in electrical property due to chlorine dopants.
    出版者: The Japan Society of Applied Physics
    出版日期: 2012-10-01
    出處: Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.10NE28-10NE28-4
    資源來源: Institute of Physics Journals
    識別號: ISSN: 0021-4922
    識別號: EISSN: 1347-4065
    識別號: DOI: 10.1143/JJAP.51.10NE28
    Appears in Collections:[Department of Chemical and Materials Engineering] journal & Dissertation

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